Formation of silver nanoparticles aligned near the bottom of SiO2 film on silicon substrate by negative-ion implantation and post-annealing

2006 ◽  
Vol 242 (1-2) ◽  
pp. 217-220 ◽  
Author(s):  
N. Arai ◽  
H. Tsuji ◽  
K. Ueno ◽  
T. Matsumoto ◽  
N. Gotoh ◽  
...  
Keyword(s):  
Silver Nanoparticles ◽  
Ion Implantation ◽  
Silicon Substrate ◽  
Sio2 Film ◽  
Negative Ion ◽  
Post Annealing

Silver Negative-Ion Implantation into Thermally Grown Thin SiO2Film on Si Substrate and Heat Treatment for Formation of Silver Nanoparticles

2007 ◽  
Vol 46 (9B) ◽  
pp. 6260-6266 ◽  
Author(s):  
Nobutoshi Arai ◽  
Hiroshi Tsuji ◽  
Kouichirou Adachi ◽  
Hiroshi Kotaki ◽  
Yasuhito Gotoh ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Silver Nanoparticles ◽  
Ion Implantation ◽  
Negative Ion ◽  
Si Substrate ◽  
Thermally Grown

Delta layer formation of silver nanoparticles in thin silicon dioxide film by negative ion implantation

2005 ◽  
Vol 196 (1-3) ◽  
pp. 39-43 ◽  
Author(s):  
Hiroshi Tsuji ◽  
Nobutoshi Arai ◽  
Takuya Matsumoto ◽  
Kazuya Ueno ◽  
Kouichiro Adachi ◽  
...  
Keyword(s):  
Silver Nanoparticles ◽  
Ion Implantation ◽  
Silicon Dioxide ◽  
Negative Ion ◽  
Layer Formation ◽  
Silicon Dioxide Film ◽  
Thin Silicon ◽  
Delta Layer ◽  
Dioxide Film

scholarly journals Electric Characteristics of Thin SiO2 Film Embedded with Ge Nanoparticles Formed by Negative Ion Implantation

Shinku ◽  
2006 ◽  
Vol 49 (3) ◽  
pp. 180-182 ◽  
Author(s):  
Nobutoshi ARAI ◽  
Hiroshi TSUJI ◽  
Naoyuki GOTOH ◽  
Takashi MINOTANI ◽  
Hiroyuki NAKATSUKA ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Sio2 Film ◽  
Negative Ion

scholarly journals Negative-ion implantation into thin SiO2 layer for defined nanoparticle formation

2006 ◽  
Vol 77 (3) ◽  
pp. 03A510 ◽  
Author(s):  
Hiroshi Tsuji ◽  
Nobutoshi Arai ◽  
Naoyuki Gotoh ◽  
Takashi Minotani ◽  
Toyoji Ishibashi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Sio2 Layer ◽  
Negative Ion ◽  
Nanoparticle Formation

Negative-Ion Implantation

1994 ◽  
Vol 354 ◽  
Author(s):  
Junzo Ishikawa
Keyword(s):  
Ion Implantation ◽  
Negative Ions ◽  
Ion Source ◽  
Negative Ion ◽  
Rf Plasma ◽  
Ion Currents ◽  
Promising Technique ◽  
Surface Charging ◽  
Silicon Carbon ◽  
A Charge

AbstractNegative-ion implantation is a promising technique for forthcoming ULSI (more than 256 M bits) fabrication and TFT (for color LCD) fabrication, since the surface charging voltage of insulated electrodes or insulators implanted by negative ions is found to saturate within so few as several volts, no breakdown of insulators would be expected without a charge neutralizer in these fabrication processes. Scatter-less negative-ion implantation into powders is also possible. For this purpose an rf-plasma-sputter type heavy negative-ion source was developed, which can deliver several milliamperes of various kinds of negative ion currents such as boron, phosphor, silicon, carbon, copper, oxygen, etc. A medium current negative-ion implanter with a small version of this type of ion source has been developed.

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