Energy dependence of electron beam penetration, area throughput rates and electron energy utilization in the low-energy region

Author(s):  
Marshall R. Cleland ◽  
Richard A. Galloway ◽  
Anthony J. Berejka
1996 ◽  
Vol 11 (9) ◽  
pp. 2152-2157 ◽  
Author(s):  
I. Jenčič ◽  
I. M. Robertson

Spatially isolated amorphous regions in Si and Ge have been regrown at room temperature by using an electron beam with an energy less than that required to cause displacement damage in crystalline material. The rate at which the zones regrow is a function of the energy of the electron beam. As the electron energy is increased from 25 keV (lowest energy employed), the regrowth rate decreases and reaches a minimum below the threshold displacement voltage. With further increases in the electron energy, the rate again increases. It is suggested that at the lower electron energies this room temperature regrowth process is stimulated by electronic excitation rather than by displacive-type processes.


Shinku ◽  
1990 ◽  
Vol 33 (2) ◽  
pp. 58-62
Author(s):  
Shigeo TANUMA ◽  
C. J. POWELL ◽  
D. R. PENN

Author(s):  
P.E. Batson ◽  
R.D. Leapman

Limits on the spatial resolution in electron energy loss scattering (EELS) can be classified in several different categories. First, we must consider probe-specimen interactions which are separate from the energy loss event. These produce spreading of the probe in the STEM case and intermixing of beams with different specimen paths in the TEM case. Second, the EELS event itself is dependent on details of the scattering physics. We identify two subcategories for describing this, based roughly on the amount of energy lost -- a) the low energy region including surface and bulk plasmons, and b) core excitations. Third, the statistical quality available for the measurement will degrade the resolution, particularly for core edges.


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