An ion beam deceleration lens for ultra-low-energy ion bombardment of naked DNA

2013 ◽  
Vol 307 ◽  
pp. 618-623 ◽  
Author(s):  
P. Thopan ◽  
K. Prakrajang ◽  
P. Thongkumkoon ◽  
D. Suwannakachorn ◽  
L.D. Yu
Keyword(s):  
Ion Beam ◽  
Ion Bombardment ◽  
Low Energy ◽  
Naked Dna ◽  
Deceleration Lens

Low-energy Ion Beam Biotechnology at Chiang Mai University

2009 ◽  
Vol 1181 ◽  
Author(s):  
Liangdeng Yu ◽  
S. Anuntalabhochai
Keyword(s):  
Gene Transfer ◽  
Biological Effects ◽  
Ion Beam ◽  
Point Of View ◽  
Low Energy ◽  
Theoretical Point ◽  
Chiang Mai ◽  
Naked Dna ◽  
Recent Developments ◽  
Cell Envelopes

AbstractMeV-ion beam has long been applied to biology research and applications for many decades as highly energetic ions are undoubtedly able to interact directly with biology molecules to cause changes in biology. However, low-energy ion beam at tens of keV and even lower has also been found to have significant biological effects on living materials. The finding has led to applications of ion-beam induced mutation and gene transfer. From the theoretical point of view, the low-energy ion beam effects on biology are difficult to understand since the ion range is so short that the ions can hardly directly interact with the key biological molecules for the changes. This talk introduces interesting aspects of low-energy ion beam biology, including basis of ion beam biotechnology and recent developments achieved in Chiang Mai University in relevant applications such as mutation and gene transfer and investigations on mechanisms involved in the low-energy ion interaction with biological matter such as eV-keV ion beam bombardments of naked DNA and the cell envelopes.

Ion Beam Surface Modification for Achieving Rectification in Gold-Aluminum Nitride-Silicon Junctions

1993 ◽  
Vol 316 ◽  
Author(s):  
T. Stacy ◽  
B. Y. Liaw ◽  
A. H. Khan ◽  
G. Zhao ◽  
E. M. Charlson ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Ion Bombardment ◽  
Low Energy ◽  
Silicon Substrates ◽  
Scanning Electron Micrographs ◽  
Electrical Measurements ◽  
Crystal Silicon ◽  
Beam Surface

ABSTRACTLow energy ion bombardment has been utilized to fabricate rectifying contacts on aluminum nitride grown on single crystal silicon substrates. Bombardment of aluminum nitride with methane was followed by sputter deposition of gold contacts. To our knowledge, this is the first report of rectifying contact formation on aluminum nitride. Scanning electron micrographs show that the initially ordered aluminum nitride surface is significantly altered with low energy methane ion beam exposure. Electrical measurements made on samples which had been partially masked during implantation indicate that rectification is a result of the ion bombardment.

Plasma immersion low-energy-ion bombardment of naked DNA

2010 ◽  
Vol 204 (18-19) ◽  
pp. 2960-2965 ◽  
Author(s):  
S. Sarapirom ◽  
K. Sangwijit ◽  
S. Anuntalabhochai ◽  
L.D. Yu
Keyword(s):  
Ion Bombardment ◽  
Low Energy ◽  
Naked Dna

Simulations of Low-Energy Ion Bombardment and Epitaxial Growth

1991 ◽  
Vol 236 ◽  
Author(s):  
E. Chason ◽  
P. Bedrossian ◽  
J.Y. Tsao ◽  
B.W. Dodson ◽  
S.T. Picraux
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Low Energy ◽  
High Energy Electron ◽  
Preferential Sputtering ◽  
Surface Vacancy ◽  
Atomic Coordination ◽  
Primary Interaction

AbstractWe have performed computer simulations of epitaxial growth and low-energy ion bombardment for comparison with reflection high-energy electron diffraction (RHEED) mesurements. The simulations are based on a hybrid Monte Carlo/rate equation approach which includes the processes of defect creation (adatom and surface vacancy), surface diffusion, and attachment and detachment from steps and islands. In this work, we focus on simulating the experimental observations of ion-induced RHEED oscillations and cancellation of RHEED oscillations during simultaneous ion bombardment and growth. For the interaction of the low-energy ion with the surface, we consider two mechanisms: preferential sputtering (where the sputtering cross section depends on the atomic coordination) and mobile vacancies. Our results indicate that the primary interaction of the ion beam with the surface is probably through the creation of mobile vacancies, and that the degree of preferential sputtering is not large.

Simulations of Low-Energy Ion Bombardment and Epitaxial Growth

1991 ◽  
Vol 235 ◽  
Author(s):  
E. Chason ◽  
P. Bedrossian ◽  
J. Y. Tsao ◽  
B. W. Dodson ◽  
S. T. Picraux
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Low Energy ◽  
High Energy Electron ◽  
Preferential Sputtering ◽  
Surface Vacancy ◽  
Atomic Coordination ◽  
Primary Interaction

ABSTRACTWe have performed computer simulations of epitaxial growth and low-energy ion bombardment for comparison with reflection high-energy electron diffraction (RHEED) mesurements. The simulations are based on a hybrid Monte Carlo/rate equation approach which includes the processes of defect creation (adatom and surface vacancy), surface diffusion, and attachment and detachment from steps and islands. In this work, we focus on simulating the experimental observations of ion-induced RHEED oscillations and cancellation of RHEED oscillations during simultaneous ion bombardment and growth. For the interaction of the low-energy ion with the surface, we consider two mechanisms: preferential sputtering (where the sputtering cross section depends on the atomic coordination) and mobile vacancies. Our results indicate that the primary interaction of the ion beam with the surface is probably through the creation of mobile vacancies, and that the degree of preferential sputtering is not large.

Effects of the Combined Exposure of Silicon to Beams of Low-Energy Argon Ions and Halogen-Containing Molecules

1984 ◽  
Vol 38 ◽  
Author(s):  
A. W. Kolfschoten
Keyword(s):  
Experimental Data ◽  
Ion Beam ◽  
Surface Region ◽  
Ion Bombardment ◽  
Low Energy ◽  
Reactive System ◽  
Combined Exposure ◽  
Si Substrate ◽  
Model Based ◽  
Argon Ions

AbstractThis paper reviews our results of modulated ion beam studies of the ion-assisted etching of Si. It is shown that the experimental data of the Si(C12, Ar+) reactive system can be described by a model based upon an ion-bombardment induced amorphousness of the Si substrate and the formation of a mixed surface region of several atomic layers of chlorine, argon and silicon. It is also shown that the model is in general agreement with the experimental data of the Si(XeF2, Ar+) and C(H, Ar+) systems.

Ion Beam Induced Growth Structure of Fluorite Type Oxide Films for Biaxially Textured HYSC Coated Conductors

1999 ◽  
Vol 585 ◽  
Author(s):  
Y. Iijima ◽  
M. Kimura ◽  
T. Saitoh
Keyword(s):  
Film Growth ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Coated Conductors ◽  
Low Energy ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Fluorite Type ◽  
Pyrochlore Type ◽  
Oxide Crystals

AbstractBiaxially aligned film growth by dual-ion-beam sputtering methods were studied for fluorite type (Zr0.85Y0.15O1.93(YSZ), Hf0.74Yb0.26O1.87, CeO2), pyrochlore type (Zr2Sm2O7), and rare-earth C type (Y2O3, Sm2O3) oxides on polycrystalline Ni-based alloy substrates. Cubetextured (all axes aligned with a <100> axis substrate normal) films were obtained for fluorite and pyrochlore ones by low energy (<300 eV) ion bombardment at low temperatures (< 300 °C). Besides, cube textured Y2O3 films were obtained in far narrower conditions with a quite low energy (150 eV)-ion bombardment at the temperature of 300 °C. The assisting ion energy dependence was discussed in connection with lattice energies for these oxide crystals.

Modification Of Properties Of Ion-Beam-Sputtered Yttrium-Oxide Thin Films By Low-Energy Ion Bombardment

1991 ◽  
Vol 223 ◽  
Author(s):  
K. A. Klemm ◽  
L. F. Johnson ◽  
M. B. Moran
Keyword(s):  
Yttrium Oxide ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Low Energy ◽  
Ion Energy ◽  
Deposited Energy ◽  
Current Densities ◽  
Argon Ions ◽  
Substrate Temperatures ◽  
Argon Content

ABSTRACTThe effect of low-energy ion bombardment on ion-beam-sputtered yttrium-oxide films was studied. Yttria films were subjected to argon ions accelerated by a potential of up to 500 V with current densities of up to 8 μA/cm2 and were deposited at differing substrate temperatures. Yttria films bombarded during deposition were found to be amorphous, and trends observed with increased ion energy include reduced amount of residual compressive stress, increased argon content, and decreased refractive index, depending on deposited energy and substrate temperature.

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