Simulations of Low-Energy Ion Bombardment and Epitaxial Growth

1991 ◽  
Vol 236 ◽  
Author(s):  
E. Chason ◽  
P. Bedrossian ◽  
J.Y. Tsao ◽  
B.W. Dodson ◽  
S.T. Picraux
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Low Energy ◽  
High Energy Electron ◽  
Preferential Sputtering ◽  
Surface Vacancy ◽  
Atomic Coordination ◽  
Primary Interaction

AbstractWe have performed computer simulations of epitaxial growth and low-energy ion bombardment for comparison with reflection high-energy electron diffraction (RHEED) mesurements. The simulations are based on a hybrid Monte Carlo/rate equation approach which includes the processes of defect creation (adatom and surface vacancy), surface diffusion, and attachment and detachment from steps and islands. In this work, we focus on simulating the experimental observations of ion-induced RHEED oscillations and cancellation of RHEED oscillations during simultaneous ion bombardment and growth. For the interaction of the low-energy ion with the surface, we consider two mechanisms: preferential sputtering (where the sputtering cross section depends on the atomic coordination) and mobile vacancies. Our results indicate that the primary interaction of the ion beam with the surface is probably through the creation of mobile vacancies, and that the degree of preferential sputtering is not large.

Simulations of Low-Energy Ion Bombardment and Epitaxial Growth

1991 ◽  
Vol 235 ◽  
Author(s):  
E. Chason ◽  
P. Bedrossian ◽  
J. Y. Tsao ◽  
B. W. Dodson ◽  
S. T. Picraux
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Low Energy ◽  
High Energy Electron ◽  
Preferential Sputtering ◽  
Surface Vacancy ◽  
Atomic Coordination ◽  
Primary Interaction

ABSTRACTWe have performed computer simulations of epitaxial growth and low-energy ion bombardment for comparison with reflection high-energy electron diffraction (RHEED) mesurements. The simulations are based on a hybrid Monte Carlo/rate equation approach which includes the processes of defect creation (adatom and surface vacancy), surface diffusion, and attachment and detachment from steps and islands. In this work, we focus on simulating the experimental observations of ion-induced RHEED oscillations and cancellation of RHEED oscillations during simultaneous ion bombardment and growth. For the interaction of the low-energy ion with the surface, we consider two mechanisms: preferential sputtering (where the sputtering cross section depends on the atomic coordination) and mobile vacancies. Our results indicate that the primary interaction of the ion beam with the surface is probably through the creation of mobile vacancies, and that the degree of preferential sputtering is not large.

Argon Ion Bombardment During Molecular Beam Epitaxy of Ge (001)

1988 ◽  
Vol 128 ◽  
Author(s):  
Eric Chason ◽  
K. M. Horn ◽  
J. Y. Tsao ◽  
S. T. Picraux
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Ion Beam ◽  
High Energy ◽  
Low Energy ◽  
High Energy Electron ◽  
Argon Ion Bombardment ◽  
Argon Ion

ABSTRACTUsing in situ, real-time reflection high energy electron diffraction (RHEED), we have measured the evolution of Ge (001) surface morphology during simultaneous molecular beam epitaxy and Ar ion beam bombardment. Surprisingly, low-energy Ar ions during growth tend to smoothen the surface. Bombardment by the ion beam without growth roughens the surface, but the surface can be reversibly smoothened by restoring the growth beam. We have measured the effect of such “ion beam growth smoothening” above and below the critical temperature for intrinsic growth roughening. At all measured growth temperatures the surface initially smoothens, but below the critical roughening temperature the final surface morphology is rough whereas above this temperature the final morphology is smooth.

scholarly journals Intra-Cascade Surface Recombination of Point Defects During Ion Bombardment of Ge (001)

1993 ◽  
Vol 316 ◽  
Author(s):  
J. A. Floro ◽  
B. K. Kellerman ◽  
E. Chason ◽  
S. T. Picraux ◽  
D. K. Brice ◽  
...  
Keyword(s):  
Point Defects ◽  
Surface Recombination ◽  
Ion Bombardment ◽  
High Energy ◽  
Low Energy ◽  
Yield Reduction ◽  
High Energy Electron ◽  
Near Surface ◽  
Large Numbers

ABSTRACTLow energy Ar and Xe ion bombardment of Ge (001) produces large numbers of point defects on the Ge surface and in the near-surface regions. Defect concentrations on the surface are detected and quantified in real time during bombardment using in situ Reflection High Energy Electron Diffraction (RHEED). We report the energy dependence of the defect yield for 70–500 eV Ar and Xe ion bombardment, and the temperature dependence of the defect yield (defects/ion) during 200 eV ion bombardment. The defect yield drops rapidly as the substrate temperature during bombardment is varied from 175 K to 400 K. We attribute the yield reduction to surface recombination of adatoms and vacancies produced in the same collision cascade.

Densification and Crystallization of Amorphous SiO2 by Neutral Beam Bombardment

1992 ◽  
Vol 284 ◽  
Author(s):  
Tatsumi Mizutani
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ion Beam ◽  
High Energy ◽  
Neutral Beam ◽  
High Dose ◽  
High Energy Electron ◽  
Amorphous Sio2 ◽  
Preferential Sputtering ◽  
Spot Formation

ABSTRACTAmorphous SiO2 films formed by thermal oxidation of silicon have been bombarded by low-energy (350 — 400 eV) ion beam and neutral beam of inert atoms. The modified SiO2 layers have been characterized by Auger electron spectroscopy (AES), Rutherford backscattering spectroscopy (RBS) and reflection high energy electron diffraction (RHEED). It is shown that neutral beam bombardment does not cause preferential sputtering of oxygenfrom SiO2, whereas ion beam of the same energy causes significant preferential sputtering. For neutral bombardment, densification and crystallization of SiO2 have been observed. The formation of α-cristobalite and α-quartz from amorphous SiO2 has been observed for high dose bombardments (>1017neutrals/cm2). These densification and crystallization phenomena can be attributed to high temperature and high pressure local spot formation upon the incidence of energetic neutral atoms. For ion beam bombardments, these densification and crystallization phenomena have not been observed.

Ion Beam Mixing of Ni-Ti Bilayered Thin Films

1985 ◽  
Vol 43 ◽  
pp. 290-291
Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. H. Rashid
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Amorphous Alloys ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Mixing Efficiency ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Binary Metal

Ion beam mixing has recently been found to be an effective method of producing amorphous alloys in the binary metal systems where the two original constituent metals are of different crystal structure. The mechanism of ion beam mixing are not well understood yet. Several mechanisms have been proposed to account for the observed mixing phenomena. The first mechanism is enhanced diffusion due to defects created by the incoming ions. Second is the cascade mixing mechanism for which the kinematicel collisional models exist in the literature. Third mechanism is thermal spikes. In the present work we have studied the mixing efficiency and ion beam induced amorphisation of Ni-Ti system under high energy ion bombardment and the results are compared with collisional models. We have employed plan and x-sectional veiw TEM and RBS techniques in the present work.

Ion Beam Imaging Methodology of Invisible Metal under Insulator Using High Energy Electron Beam Charging

2007 ◽  
Author(s):  
C.H. Wang ◽  
S.P. Chang ◽  
C.F. Chang ◽  
J.Y. Chiou
Keyword(s):  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Measurement ◽  
High Energy ◽  
Advanced Technology ◽  
High Energy Electron ◽  
Common Assumption ◽  
Dual Beam ◽  
Imaging Methodology

Abstract Focused ion beam (FIB) is a popular tool for physical failure analysis (FA), especially for circuit repair. FIB is especially useful on advanced technology where the FIB is used to modify the circuit for new layout verification or electrical measurement. The samples are prepared till inter-metal dielectric (IMD), then a hole is dug or a metal is deposited or oxide is deposited by FIB. A common assumption is made that metal under oxide can not be seen by FIB. But a metal ion image is desired for further action. Dual beam, FIB and Scanning Electron Microscope (SEM), tools have a special advantage. When switching back and forth from SEM to FIB the observation has been made that the metal lines can be imaged. The details of this technique will be discussed below.

scholarly journals Comparison of low energy and high energy electron beam treatments on sensory and chemical properties of seeds

2021 ◽  
pp. 110575
Author(s):  
H. Aisala ◽  
H. Nygren ◽  
T. Seppänen-Laakso ◽  
R-L. Heiniö ◽  
M. Kießling ◽  
...  
Keyword(s):  
Electron Beam ◽  
Chemical Properties ◽  
High Energy ◽  
Low Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
And Chemical Properties
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