A Raman study on nanosecond-laser-induced multi-level switching of Ge2Sb2Te5 thin films

2021 ◽  
Vol 144 ◽  
pp. 107393
Author(s):  
Jia Du ◽  
Zhangjian Mu ◽  
Lan Li ◽  
Junying Li
Keyword(s):  
Thin Films ◽  
Nanosecond Laser ◽  
Raman Study ◽  
Multi Level

Raman study of oriented ZnO thin films deposited by sol–gel method

2008 ◽  
Vol 71 (4) ◽  
pp. 1234-1238 ◽  
Author(s):  
S. Ben Yahia ◽  
L. Znaidi ◽  
A. Kanaev ◽  
J.P. Petitet
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Raman Study

scholarly journals Raman study of electron-phonon coupling in thin films of the spinel oxide superconductor LiTi2O4

2017 ◽  
Vol 96 (9) ◽  
Author(s):  
D. Chen ◽  
Y.-L. Jia ◽  
T.-T. Zhang ◽  
Z. Fang ◽  
K. Jin ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxide Superconductor ◽  
Phonon Coupling ◽  
Spinel Oxide ◽  
Electron Phonon Coupling ◽  
Raman Study

Fabrication of Ni–Al thin films by the pulsed laser deposition technique

1992 ◽  
Vol 7 (10) ◽  
pp. 2639-2642 ◽  
Author(s):  
R.K. Singh ◽  
Deepika Bhattacharya ◽  
S. Sharan ◽  
P. Tiwari ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
Nanosecond Laser ◽  
X Ray ◽  
Target Composition

We have fabricated Ni3Al and NiAl thin films on different substrates by the pulsed laser deposition (PLD) technique. A high energy nanosecond laser beam was directed onto Ni–Al (NiAl, Ni3Al) targets, and the evaporated material was deposited onto substrates placed parallel to the target. The substrate temperature was varied between 300 and 400 °C, and the substrate-target distance was maintained at approximately 5 cm. The films were analyzed using scanning electron microscopy, transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry. At energy densities slightly above the evaporation threshold, a slight enrichment of Al was observed, while at higher energy densities the film stoichiometry was close (<5%) to the target composition. Barring a few particles, the surface of the films exhibited a smooth morphology. X-ray and TEM results corroborated the formation of Ni3Al and NiAl films from similar target compositions. These films were characterized by small randomly oriented grains with grain size varying between 200 and 400 Å.

Temperature and magnetic field dependent Raman study of electron-phonon interactions in thin films of Bi2Se3 and Bi2Te3 nanoflakes

2020 ◽  
Vol 101 (24) ◽  
Author(s):  
Sören Buchenau ◽  
Sarah Scheitz ◽  
Astha Sethi ◽  
John E. Slimak ◽  
Tomke Eva Glier ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Field Dependent ◽  
Raman Study

Crosslinking and Ciiain-Scission of Photosensitive Polyimidesiloxane Under Deep UV Irradiation

1990 ◽  
Vol 203 ◽  
Author(s):  
S. Jeng ◽  
M. Xu ◽  
H. S. Kwok ◽  
D. Y. Tang ◽  
H. R. Acharya ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Plasma Etching ◽  
Chain Scission ◽  
Low Dielectric Constant ◽  
Contact Mode ◽  
Low Dielectric ◽  
Oxygen Plasma Etching ◽  
Multi Level ◽  
193 Nm

ABSTRACTPolyimides are considered as promising packaging materials in multi-layer interconnections and multi-chip modules because of their low dielectric constant and good planarizability. Photosensitive polyimidesiloxane (SIM2000XL) as a newly emerging polyimide is showing not only similar properties as conventional polyimides but also the advantages of process simplification and improved adhesion. Moreover, it is proposed that SIM2000XL can be an oxygen-plasma etching barrier in multi-level lithographic systems because of its high silicon content.We characterized the photosensitivity of SIM2000XL thin films under excimer laser (193 nm) exposure. The sensitivity of SIM2000XL was found to be about 20 mJ/cm2. After the SIM2000XL thin films were exposed through a photomask in the contact mode, development gave the usual negative patterns. However, the remained film thickness after exposure reached a maximum of about 65 % of the initial film thickness and decreased with further irradiation. This can be attributed to the competing processes of polymer crosslinkage and chain-scission. This phenomenon is important for applications of polymers in DUV lithography. A detailed study of these two competing processes are presented.

Modeling of Temperature Cycles Induced by Pico- and Nanosecond Laser Pulses in Zinc Oxide and Molybdenum Thin Films

2015 ◽  
Vol 138 (3) ◽  
Author(s):  
D. Scorticati ◽  
G. R. B. E. Römer ◽  
A. J. Huis in't Veld ◽  
D. F. de Lange
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Zinc Oxide ◽  
Pulse Repetition Frequency ◽  
Laser Pulses ◽  
Temperature Fields ◽  
Nanosecond Laser ◽  
Pulsed Lasers ◽  
Temperature Cycles ◽  
Nanosecond Laser Pulses

The aim of this paper is to study the benefits of applying ultrashort pulsed lasers over nanosecond pulsed lasers for selective (i.e., superficial) heat treatment of materials in general and for selective heat treatment of thin films in particular. To this end, a background of the physics that govern the absorption of light and subsequent diffusion of heat in semiconductor and metallic materials is provided, when exposed to picosecond or nanosecond laser pulses, with a fluence below the ablation threshold. A numerical model was implemented using a commercial finite-element modeling package, to simulate the temperature fields in thin films induced by laser pulses. The results of the simulations provide insight in the temperature cycles and corresponding timescales, as function of the processing parameters, such as fluence, pulse duration, pulse repetition frequency, and laser wavelength. Numerical simulations were run for thin films of molybdenum (Mo) and zinc oxide (ZnO) on a glass substrate, which are materials commonly adopted as (back and front) electrodes in thin film solar cells.

Raman study on Bi–Pb–Sr–Ca–Cu–O superconductor thin films grown by spray pyrolysis on several types of substrate

2002 ◽  
Vol 414 (1) ◽  
pp. 123-128 ◽  
Author(s):  
C. Mejı́a-Garcı́a ◽  
E. Dı́az-Valdés ◽  
G. Contreras-Puente ◽  
J.L. López-López ◽  
M. Jergel
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Raman Study ◽  
Superconductor Thin Films

Optical limiting properties of BODIPY dyes substituted with styryl or vinylene groups on the nanosecond timescale

2019 ◽  
Vol 23 (07n08) ◽  
pp. 701-717 ◽  
Author(s):  
Nobuhle Ndebele ◽  
Zweli Hlatshwayo ◽  
Bokolombe P. Ngoy ◽  
Gugu Kubheka ◽  
John Mack ◽  
...  
Keyword(s):  
Thin Films ◽  
Absorption Coefficient ◽  
Laser Pulses ◽  
Optical Limiting ◽  
Nanosecond Laser ◽  
Third Order ◽  
The Third ◽  
Nanosecond Laser Pulses ◽  
532 Nm ◽  
Order Susceptibility

The results of recent studies on the optical limiting properties of BODIPY dyes at 532 and 1064 nm are described and compared. The optical limiting properties of novel 1,7-dimethyl-3,5-di-4-dihydroxyborylstyryl- and 3,5,7-tristyryl-1-methyl-BODIPY dyes were studied in CH2Cl2 and C6H6 and polystyrene thin films using the open aperture Z-scan technique at 532 nm with nanosecond laser pulses to provide an example of how the effective nonlinear absorption coefficient, the third order susceptibility, hyperpolarizability and limiting thresholds can be calculated.

TiO2 thin films for spintronics application: a Raman study

2009 ◽  
Vol 41 (5) ◽  
pp. 558-565 ◽  
Author(s):  
F. Rossella ◽  
P. Galinetto ◽  
M. C. Mozzati ◽  
L. Malavasi ◽  
Y. Diaz Fernandez ◽  
...  
Keyword(s):  
Thin Films ◽  
Tio2 Thin Films ◽  
Raman Study
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