Abstract
The laser-generated surface acoustic wave (SAW) technique is a promising method to measure the mechanical properties of thin films quickly and nondestructively. Residual stress is inevitable during the processing and manufacturing of integrated circuits, which will have a major impact on the physical and mechanical properties of the thin film materials and cause deterioration to the structural strength. In this study, the SAW technique based method is proposed for quantitative and nondestructive measuring the residual stress in the nanostructured films. The method is verified by the experiment measuring the SiO2 films in the thickness range of 100 to 2000 nm. The experimental procedures, including signal excitation, reception and processing, are described in detail. By matching the SAW experimental dispersion curve with the calculated theoretical dispersion curve containing the residual stress, the residual stress of the SiO2 films along [110] and [100] crystallographic orientation of the Si wafer is successfully quantified. The determination results are ranged from -65.5 to 421.1 MPa and the stress value increases as the film thickness decreases, revealing the residual stress of the SiO2 film is compressive. Meanwhile, the conventional substrate curvature method as a comparison is used to verify the correctness and feasibility of the proposed SAW method for the residual stress determination.
