Ultrafast reflectivity and electron dynamic properties of Tb0.27Dy0.73Fe2 thin films

2008 ◽  
Vol 403 (23-24) ◽  
pp. 4228-4231 ◽  
Author(s):  
Yang Zhiqiang ◽  
Chen Lei ◽  
Weng Mengchao
2019 ◽  
Vol 37 (3) ◽  
pp. 031513 ◽  
Author(s):  
Anabil Gayen ◽  
Rajkumar Modak ◽  
Ananthakrishnan Srinivasan ◽  
Vallabhapurapu Vijaya Srinivasu ◽  
Perumal Alagarsamy

2017 ◽  
Author(s):  
Sajid Husain ◽  
Vineet Barwal ◽  
Ankit Kumar ◽  
Nilamani Behera ◽  
Serkan Akansel ◽  
...  

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-327-Pr2-330 ◽  
Author(s):  
D. Pain ◽  
O. Acher ◽  
D. Damiani ◽  
C. Boscher ◽  
N. Vukadinovic ◽  
...  

Sensors ◽  
2020 ◽  
Vol 20 (5) ◽  
pp. 1532 ◽  
Author(s):  
Xianfeng Liang ◽  
Cunzheng Dong ◽  
Huaihao Chen ◽  
Jiawei Wang ◽  
Yuyi Wei ◽  
...  

Since the revival of multiferroic laminates with giant magnetoelectric (ME) coefficients, a variety of multifunctional ME devices, such as sensor, inductor, filter, antenna etc. have been developed. Magnetoelastic materials, which couple the magnetization and strain together, have recently attracted ever-increasing attention due to their key roles in ME applications. This review starts with a brief introduction to the early research efforts in the field of multiferroic materials and moves to the recent work on magnetoelectric coupling and their applications based on both bulk and thin-film materials. This is followed by sections summarizing historical works and solving the challenges specific to the fabrication and characterization of magnetoelastic materials with large magnetostriction constants. After presenting the magnetostrictive thin films and their static and dynamic properties, we review micro-electromechanical systems (MEMS) and bulk devices utilizing ME effect. Finally, some open questions and future application directions where the community could head for magnetoelastic materials will be discussed.


2016 ◽  
Vol 23 (03) ◽  
pp. 1650010 ◽  
Author(s):  
LIAN CUI ◽  
HAIYING CUI ◽  
CHUNMEI WU ◽  
GUIHUA YANG ◽  
ZELONG HE ◽  
...  

In this paper, frequency, temperature, film thickness, surface effects, and various parameters dependence of dielectric susceptibility is investigated theoretically for ferroelectric thin films by the modified Landau theory under an AC applied field. The dielectric susceptibility versus AC applied field shows butterfly-shaped behavior, and depends strongly on the frequency and amplitude of the field and temperature. Our study shows that the existence of the surface transition layer can depress the dielectric susceptibility of a ferroelectric thin film. These results are well consistent with the phenomena reported in experiments.


2018 ◽  
Vol 8 (2) ◽  
pp. 195 ◽  
Author(s):  
Deokman Kim ◽  
Yunsang Kwak ◽  
Junhong Park

2018 ◽  
Vol 10 (5) ◽  
pp. 5090-5098 ◽  
Author(s):  
Minghong Tang ◽  
Bingcheng Zhao ◽  
Weihua Zhu ◽  
Zhendong Zhu ◽  
Q. Y. Jin ◽  
...  

Domain Walls ◽  
2020 ◽  
pp. 217-244
Author(s):  
L. Li ◽  
X. Pan

This chapter presents a review on the recent progress in transmission electron microscopy (TEM) studies of ferroelectric DWs in one of the most widely studied ferroelectric systems — BiFeO3 thin films. This system has been chosen representative for a much wider range of ferroelectric perovskites with functional DWs, due to its strong spontaneous polarization, coexistence of ferroelectricity, ferroelasticity and antiferromagnetism, and numerous functionalities at the DWs. Here, the chapter first briefly introduces the instrumentation, experimental procedures, imaging mechanisms, and analytical methods of the state-of-the-art TEM-based techniques. The application of these techniques to the study of DW structures and switching behaviors is demonstrated, with particular emphasis on the critical roles of interfaces and defects, and interplay between different types of DWs. The phenomena and mechanism discovered in the model system of BiFeO3 are also applicable to many other ferroelectric materials with similar DW structures. The results not only advance the fundamental understanding of static and dynamic properties of ferroelectric DWs, but also form the basis for designing of practical ferroelectric-DW-based devices.


2001 ◽  
Vol 35 (1-4) ◽  
pp. 167-175 ◽  
Author(s):  
D. Averty ◽  
P. Limousin ◽  
H. W. Gundel

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