Transmission Electron Microscopy Study of Ferroelectric Domain Walls in BiFeO3 Thin Films: Structures and Switching Dynamics

Domain Walls ◽  
2020 ◽  
pp. 217-244
Author(s):  
L. Li ◽  
X. Pan

This chapter presents a review on the recent progress in transmission electron microscopy (TEM) studies of ferroelectric DWs in one of the most widely studied ferroelectric systems — BiFeO3 thin films. This system has been chosen representative for a much wider range of ferroelectric perovskites with functional DWs, due to its strong spontaneous polarization, coexistence of ferroelectricity, ferroelasticity and antiferromagnetism, and numerous functionalities at the DWs. Here, the chapter first briefly introduces the instrumentation, experimental procedures, imaging mechanisms, and analytical methods of the state-of-the-art TEM-based techniques. The application of these techniques to the study of DW structures and switching behaviors is demonstrated, with particular emphasis on the critical roles of interfaces and defects, and interplay between different types of DWs. The phenomena and mechanism discovered in the model system of BiFeO3 are also applicable to many other ferroelectric materials with similar DW structures. The results not only advance the fundamental understanding of static and dynamic properties of ferroelectric DWs, but also form the basis for designing of practical ferroelectric-DW-based devices.

2010 ◽  
Vol 16 (S2) ◽  
pp. 1396-1397
Author(s):  
CT Nelson ◽  
Y Zhang ◽  
CM Folkman ◽  
CB Eom ◽  
X Pan

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.


2001 ◽  
Vol 7 (S2) ◽  
pp. 558-559
Author(s):  
K.M. Jones ◽  
Y. Yan ◽  
F.S. Hasoon ◽  
M.M. Al-Jassim

Polycrystalline CdTe is a promising candidate for solar cells due to its nearly ideal band-gap, high absorption coefficient, and ease of film fabrication. Small-area CdTe/CdS cells with efficiencies of 16.0% have been demonstrated. The structure of a typical CdTe/CdS solar cell (Figure 1) consists of a glass superstrate, on which a thin layer of SnO2 is deposited (front contact), n-type CdS, p-type CdTe, and a back contact. Prior to applying the back contact to the CdTe, etching of the CdTe surface using a mixture of nitric and phosphoric (NP) acids is normally needed. It is known that the etching depletes a crystalline CdTe surface of Cd and creates a Te-rich layer. Two effects of the Te-rich layer has been proposed, namely, forming a Te-CdTe low-series-resistance contact and improving CdTe device stability by the gettering of Cu. Thus, the NP etching is an important process in the CdTe device fabrication. in this paper, we report on transmission electron microscopy (TEM) study of the microstructure of the surface of NP etched CdTe thin films.


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