DYNAMIC PROPERTIES OF DIELECTRIC SUSCEPTIBILITY IN FERROELECTRIC THIN FILMS

2016 ◽  
Vol 23 (03) ◽  
pp. 1650010 ◽  
Author(s):  
LIAN CUI ◽  
HAIYING CUI ◽  
CHUNMEI WU ◽  
GUIHUA YANG ◽  
ZELONG HE ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Applied Field ◽  
Landau Theory ◽  
Dynamic Properties ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Thin Films ◽  
Dielectric Susceptibility ◽  
Surface Transition ◽  
Frequency Temperature

In this paper, frequency, temperature, film thickness, surface effects, and various parameters dependence of dielectric susceptibility is investigated theoretically for ferroelectric thin films by the modified Landau theory under an AC applied field. The dielectric susceptibility versus AC applied field shows butterfly-shaped behavior, and depends strongly on the frequency and amplitude of the field and temperature. Our study shows that the existence of the surface transition layer can depress the dielectric susceptibility of a ferroelectric thin film. These results are well consistent with the phenomena reported in experiments.

CRITICAL BEHAVIOUR OF FERROELECTRIC THIN FILMS

2002 ◽  
Vol 16 (03) ◽  
pp. 473-480 ◽  
Author(s):  
JULIA M. WESSELINOWA ◽  
STEFFEN TRIMPER
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Scaling Laws ◽  
Transverse Field ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Thin Films ◽  
Number Of Layers ◽  
Ising Systems ◽  
2D And 3D ◽  
Good Agreement

Based on an Ising model in a transverse field (TIM) and using a Green's function formalism the critical exponents of the polarization β and of the longitudinal susceptibility γ are calculated for a ferroelectric thin film consisting of N layers. The exponents depends on the number of layers in a significant manner. Whereas for N=3 layers the exponents are β=0.131 and γ=1.739 there is a change over to β=0.315 and γ=1.239 in case of N=30. The datas are in a good agreement with predictions for 2D and 3D Ising systems. Using scaling laws other exponents like α, δ, η and ν are obtained, too.

scholarly journals Formation of polarization needle-like domain and its unusual switching in compositionally graded ferroelectric thin films: an improved phase field model

RSC Advances ◽  
2019 ◽  
Vol 9 (13) ◽  
pp. 7575-7586 ◽  
Author(s):  
Le Van Lich ◽  
Van-Hai Dinh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Field ◽  
Field Model ◽  
Phase Field Model ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Thin Films ◽  
Switching Mechanism ◽  
New Phase

New phase field model to reveal switching mechanism of needle domain in compositionally graded ferroelectric thin film.

Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Polarization Reversal ◽  
Ambient Gas ◽  
Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

THE ROLE OF OPTIMIZATION IN THE LANDAU THEORY OF FERROELECTRIC THIN FILMS

2009 ◽  
Author(s):  
J. F. Webb ◽  
Abdul Halim Hakim ◽  
Pandian Vasant ◽  
Nader Barsoum
Keyword(s):  
Thin Films ◽  
Landau Theory ◽  
Ferroelectric Thin Films

Dielectric susceptibility of ferroelectric thin films

1994 ◽  
Vol 152 (1) ◽  
pp. 219-224 ◽  
Author(s):  
B. D. Qu ◽  
P. L. Zhang ◽  
Y. G. Wang ◽  
C. L. Wang ◽  
W. L. Zhong
Keyword(s):  
Thin Films ◽  
Ferroelectric Thin Films ◽  
Dielectric Susceptibility

scholarly journals A Review of Thin-Film Magnetoelastic Materials for Magnetoelectric Applications

Sensors ◽  
2020 ◽  
Vol 20 (5) ◽  
pp. 1532 ◽  
Author(s):  
Xianfeng Liang ◽  
Cunzheng Dong ◽  
Huaihao Chen ◽  
Jiawei Wang ◽  
Yuyi Wei ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dynamic Properties ◽  
Early Research ◽  
Future Application ◽  
Multiferroic Materials ◽  
Open Questions ◽  
Fabrication And Characterization ◽  
Magnetoelastic Materials

Since the revival of multiferroic laminates with giant magnetoelectric (ME) coefficients, a variety of multifunctional ME devices, such as sensor, inductor, filter, antenna etc. have been developed. Magnetoelastic materials, which couple the magnetization and strain together, have recently attracted ever-increasing attention due to their key roles in ME applications. This review starts with a brief introduction to the early research efforts in the field of multiferroic materials and moves to the recent work on magnetoelectric coupling and their applications based on both bulk and thin-film materials. This is followed by sections summarizing historical works and solving the challenges specific to the fabrication and characterization of magnetoelastic materials with large magnetostriction constants. After presenting the magnetostrictive thin films and their static and dynamic properties, we review micro-electromechanical systems (MEMS) and bulk devices utilizing ME effect. Finally, some open questions and future application directions where the community could head for magnetoelastic materials will be discussed.

Effect of Rapid Thermal Processing on the Crystallization Properties of PbTiO3 Ferroelectric Thin Film

1996 ◽  
Vol 433 ◽  
Author(s):  
Jianguo Zhu ◽  
Meng Chen ◽  
Wenbing Peng ◽  
Fahua Lan ◽  
E.V. Sviridov ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Processing ◽  
Interfacial Layer ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Rapid Thermal Processing ◽  
Ferroelectric Thin Film ◽  
Processing Temperature ◽  
Time Duration

AbstractThe fabrication methods of ferroelectric (FE) thin films have received special attention in recent years because of the needs of FE thin films integrated with semiconductor devices. Rapid thermal processing (RTP) has developed in fabrication of FE thin films because it can reduce processing temperature and time duration, and it also improves the properties of FE thin films compatible with semiconductor devices. The thin film samples used were prepared by a multi-ion-beam reactive cosputtering system (MIBRECS) at room temperature. The samples were then subjected to a post-deposition annealing in a RTP system. It was found that PbTiO3 (PT) thin film could grow on amorphous or polycrystal interfacial layer and the PT thin films annealed by RTP showed the prefered [110] and [100] textures. The effect of interfacial layer on the crystallization and microstructure of the films was also discussed.

RF Magnetron Sputtered Ba0.96Ca0.04Ti0.84Zr0.16O3 Thin Films for High Frequency Applications

2004 ◽  
Vol 833 ◽  
Author(s):  
Ali Mahmud ◽  
T. S. Kalkur ◽  
N. Cramer
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Substrate Temperature ◽  
High Frequency ◽  
Satellite Communications ◽  
Ferroelectric Thin Films ◽  
Paraelectric State ◽  
Deposited Films

ABSTRACTPerovskite ferroelectric thin films in the paraelectric state exhibit outstanding dielectric properties, even at high frequencies (>1 GHz). The tunable dielectric constant of ferroelectric thin films can be used to design frequency and phase agile components. High dielectric constant thin film ferroelectric materials in the paraelectric state have received enormous attention due to their feasibility in applications such as decoupling capacitors and tunable microwave capacitors; the latter application has been fueled by the recent explosion in wireless and satellite communications. This paper reportsBa0.96Ca 0.04Ti0.84Zr0.16O3 (BCTZ) thin films that were deposited on Pt electrodes using radio frequency magnetron sputtering at a low (450 °C) substrate temperature. Sputtered thin film BCTZ at low substrate temperature is compatible with conventional integrated circuit technology. The structural characterization of the deposited films was performed by x-ray diffraction. The electrical characterization of the films was achieved by capacitance-voltage, current-voltage, and S-parameter (via vector network analyzer) measurements. In addition, the effect of post annealing on the deposited films was investigated. A detailed understanding of both their processing and material properties is discussed for successful implementation in high frequency applications.

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