Annealing temperature effect on electrical characteristics of Co/p-type Si Schottky barrier diodes

2009 ◽  
Vol 404 (8-11) ◽  
pp. 1494-1497 ◽  
Author(s):  
G. Güler ◽  
Ş. Karataş ◽  
Ö.F. Bakkaloglu
Keyword(s):  
Temperature Effect ◽  
Schottky Barrier ◽  
Annealing Temperature ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
P Type

TEMPERATURE DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF Cr/p–Si(100) SCHOTTKY BARRIER DIODES

2008 ◽  
Vol 22 (14) ◽  
pp. 2309-2319 ◽  
Author(s):  
K. ERTURK ◽  
M. C. HACIISMAILOGLU ◽  
Y. BEKTORE ◽  
M. AHMETOGLU
Keyword(s):  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Thermionic Emission ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Semiconductor Interface ◽  
Linear Portion ◽  
Barrier Heights ◽  
P Type

The electrical characteristics of Cr / p – Si (100) Schottky barrier diodes have been measured in the temperature range of 100–300 K. The I-V analysis based on thermionic emission (TE) theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperature. The conventional Richardson plot exhibits non-linearity below 200 K with the linear portion corresponding to activation energy 0.304 eV and Richardson constant (A*) value of 5.41×10-3 Acm-2 K -2 is determined from the intercept at the ordinate of this experimental plot, which is much lower than the known value of 32 Acm-2 K -2 for p-type Si . It is demonstrated that these anomalies result due to the barrier height inhomogeneities prevailing at the metal-semiconductor interface. Hence, it has been concluded that the temperature dependence of the I-V characteristics of the Cr/p – Si Schottky barrier diode can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. Furthermore, the value of the Richardson constant found is much closer than that obtained without considering the inhomogeneous barrier heights.

Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 927-930 ◽  
Author(s):  
Tomonori Nakamura ◽  
Toshiyuki Miyanagi ◽  
Isaho Kamata ◽  
Hidekazu Tsuchida
Keyword(s):  
Schottky Barrier ◽  
Annealing Temperature ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Barrier Heights ◽  
Excess Current ◽  
Low Leakage ◽  
Low Leakage Current

We compared the electrical characteristics of 4H-SiC(0001) and (000-1) Schottky barrier diodes (SBDs), and derived the Schottky barrier heights (Hbs) of Ta, W, Mo, and Pd on {0001}. We investigated the annealing temperature dependence of Hbs in Mo and the W Schottky contacts for (0001) and (000-1). The Hbs are increased by annealing, except for the W Schottky contact on (0001). The yields of 0.25 cm2 as-deposited Mo-SBDs were 93.3% for (0001) and 71.1% for (000-1), respectively. We also demonstrated over 1 cm2 (0001) as-deposited Mo-SBD with a low leakage current, an excellent ideality factor, and no excess current, encouraging the enlargement of the active area in the SBD.

The effect of gamma irradiation on electrical characteristics of Au/polyvinyl alcohol (Co, Zn-doped)/n-Si Schottky barrier diodes

2010 ◽  
Vol 118 (1) ◽  
pp. 596-603 ◽  
Author(s):  
İ. Taşçıoğlu ◽  
H. Uslu ◽  
Ş. Altındal ◽  
P. Durmuş ◽  
İ. Dökme ◽  
...  
Keyword(s):  
Polyvinyl Alcohol ◽  
Gamma Irradiation ◽  
Schottky Barrier ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes

High Temperature capable SiC Schottky diodes, based on buried grid design.

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000058-000060
Author(s):  
Tomas Hjort ◽  
Adolf Schöner ◽  
Andy Zhang ◽  
Mietek Bakowski ◽  
Jang-Kwon Lim ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Grid Design ◽  
High Temperature Operation

Electrical characteristics of 4H-SiC Schottky barrier diodes, based on buried grid design are presented. The diodes, rated to 1200V/10A and assembled into high temperature capable TO254 packages, have been tested and studied up to 250°C. Compared to conventional SiC Schottky diodes, Ascatron's buried grid SiC Schottky diode demonstrates several orders of magnitude reduced leakage current at high temperature operation.

scholarly journals Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/p-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding

Crystals ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 636
Author(s):  
Mehadi Hasan Ziko ◽  
Ants Koel ◽  
Toomas Rang ◽  
Muhammad Haroon Rashid
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Doping Profile ◽  
Structural Defects ◽  
Diffusion Welding ◽  
Native Oxide Layer ◽  
Electrical Characteristics ◽  
Discrete Energy Level ◽  
P Type

The diffusion welding (DW) is a comprehensive mechanism that can be extensively used to develop silicon carbide (SiC) Schottky rectifiers as a cheaper alternative to existing mainstream contact forming technologies. In this work, the Schottky barrier diode (SBD) fabricated by depositing Al-Foil on the p-type 4H-SiC substrate with a novel technology; DW. The electrical properties of physically fabricated Al-Foil/4H-SiC SBD have been investigated. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics based on the thermionic emission model in the temperature range (300 K–450 K) are investigated. It has been found that the ideality factor and barrier heights of identically manufactured Al-Foil/p-type-4H-SiC SBDs showing distinct deviation in their electrical characteristics. An improvement in the ideality factor of Al-Foil/p-type-4H-SiC SBD has been noticed with an increase in temperature. An increase in barrier height in fabricated SBD is also observed with an increase in temperature. We also found that these increases in barrier height, improve ideality factors and abnormalities in their electrical characteristics are due to structural defects initiation, discrete energy level formation, interfacial native oxide layer formation, inhomogenous doping profile distribution and tunneling current formation at the SiC sufaces.

Electrical Characteristics of AlGaN/GaN Schottky Barrier Diodes with Different Capping Layers

2016 ◽  
Vol 16 (11) ◽  
pp. 11635-11639
Author(s):  
Taeyoung Yang ◽  
Minjun Kim ◽  
Jae Hoon Lee ◽  
Sohyeon Kim ◽  
Kyoung-Kook Kim ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes
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