Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes
2006 ◽
Vol 527-529
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pp. 927-930
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Keyword(s):
We compared the electrical characteristics of 4H-SiC(0001) and (000-1) Schottky barrier diodes (SBDs), and derived the Schottky barrier heights (Hbs) of Ta, W, Mo, and Pd on {0001}. We investigated the annealing temperature dependence of Hbs in Mo and the W Schottky contacts for (0001) and (000-1). The Hbs are increased by annealing, except for the W Schottky contact on (0001). The yields of 0.25 cm2 as-deposited Mo-SBDs were 93.3% for (0001) and 71.1% for (000-1), respectively. We also demonstrated over 1 cm2 (0001) as-deposited Mo-SBD with a low leakage current, an excellent ideality factor, and no excess current, encouraging the enlargement of the active area in the SBD.
Keyword(s):
2011 ◽
Vol 98
(12)
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pp. 1733-1741
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2008 ◽
Vol 22
(14)
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pp. 2309-2319
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2009 ◽
Vol 404
(8-11)
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pp. 1494-1497
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2021 ◽
2020 ◽
Vol 67
(5)
◽
pp. 1931-1938
Keyword(s):
2012 ◽
Vol 725
◽
pp. 53-56
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