MWA and scanning-probe study of argon-ion irradiation effects on superconducting properties of Bi2Sr2CaCu2O8 thin films

2010 ◽  
Vol 470 (4) ◽  
pp. 251-256 ◽  
Author(s):  
N. Panarina ◽  
D. Bizyaev ◽  
V. Petukhov ◽  
Yu. Talanov
1989 ◽  
Vol 169 ◽  
Author(s):  
J. C. Barbour ◽  
J. F. Kwak ◽  
E. L. Venturini ◽  
D. S. Ginley ◽  
P. S. Peercy

AbstractThe effects of oxygen and helium ion irradiation on the superconducting properties of Tl2Ca2Ba2Cu3010 thin films were investigated. The transition temperature and width were monitored as a function of ion fluence using both magnetization and resistivity measurements. These data suggest that superconductivity is completely suppressed at 0.020 dpa for both He and 0 ion irradiation. Further, the rate of decrease in Tc as a function of deposited energy showed that the dominant mechanism causing damage-induced suppression of Tc in these films was from atomic collisions.


1995 ◽  
Vol 397 ◽  
Author(s):  
B.D. Huey ◽  
D.A. Bonnell ◽  
A.D. Akhsakhalian ◽  
A.A. Gorbunov ◽  
A. Sewing ◽  
...  

ABSTRACTIllumination of titanium thin films with an argon-ion laser has been used to fabricate nanometer scale features by localized oxidation. The laser induces a temperature gradient in the metal film, within which oxidation may occur. Due to the non-linearity of the reaction with temperature, the reaction zone can be laterally confined to regions narrower than the diffraction limit of optical resolution. Scanning probe microscopy indicates widths ranging from 105 to 600 nm and heights of 0.8 to 30 nm. The possibility of forming novel structures is demonstrated.


2003 ◽  
Vol 36 (1-6) ◽  
pp. 733-736 ◽  
Author(s):  
K.R. Mavani ◽  
S. Rayaprol ◽  
D.S. Rana ◽  
C.M. Thaker ◽  
D.G. Kuberkar ◽  
...  

2007 ◽  
Vol 101 (3) ◽  
pp. 034913 ◽  
Author(s):  
R. Sivakumar ◽  
C. Sanjeeviraja ◽  
M. Jayachandran ◽  
R. Gopalakrishnan ◽  
S. N. Sarangi ◽  
...  

2011 ◽  
Vol 5 (1) ◽  
pp. 19-23 ◽  
Author(s):  
Maja Popovic ◽  
Mirjana Novakovic ◽  
Zlatko Rakocevic ◽  
Natasa Bibic

In this work, the effects of 120 keV Ar+ ion implantation on the structural properties of TiN thin films were investigated. TiN layers were deposited by d.c. reactive sputtering on Si(100) wafers at room temperature or at 150?C. The thickness of TiN layers was ~240 nm. After deposition the samples were irradiated with 120 keV argon ions to the fluencies of 1?1015 and 1?1016 ions/cm2. Structural characterization was performed with Rutherford backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (XTEM), grazing angle X-ray diffraction (XRD) and atomic force microscopy (AFM). It was found that the argon ion irradiation induced the changes in the lattice constant, mean grain size, micro-strain and surface morphology of the TiN layers. The observed micro-structural changes are due to the formation of the high density damage region in the TiN thin film structure.


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