Crystallization temperature dependence of interference color and morphology in poly(trimethylene terephthalate) spherulite

Polymer ◽  
2006 ◽  
Vol 47 (13) ◽  
pp. 4831-4838 ◽  
Author(s):  
Jong Hwa Yun ◽  
Keiichi Kuboyama ◽  
Tsuneo Chiba ◽  
Toshiaki Ougizawa
Keyword(s):  
Temperature Dependence ◽  
Crystallization Temperature ◽  
Interference Color ◽  
Trimethylene Terephthalate

Study on Crystal Morphology and Melting Properties of the Isothermally Crystallized Poly(trimethylene Terephthalate)

2010 ◽  
Vol 428-429 ◽  
pp. 259-262
Author(s):  
Ming Tao Run ◽  
Yan Ping Hao ◽  
Hong Zan Song
Keyword(s):  
Optical Microscopy ◽  
Crystallization Temperature ◽  
Isothermal Crystallization ◽  
Crystal Morphology ◽  
Polarized Optical Microscopy ◽  
Banded Spherulites ◽  
Melting Properties ◽  
Band Spacing ◽  
Trimethylene Terephthalate ◽  
Temperature Heating

The spherulites’ morphology and melting properties of the poly(trimethylene terephthalate) formed in limited space at specific temperatures was studied by the polarized optical microscopy (POM). The results suggest that the spherulites’ morphology depends strongly on the temperature. When the isothermal crystallization temperatures increase from 190 to 225 oC, the spherulites’ morphology continuously changes in the following order: nonbanded → regular banded → serrated banded → nonbanded spherulites. Furthermore, the band spacing increases with the crystallization temperature. Heating the banded spherulites will cause them melt as well as the changing of the bandings, especially the bandings changes in the following order: clear → faint → clear → disappear in a certain range of temperature, which is proposed for resulting from a lamellar melting-recrystallization-remelting mechanism.

Crystallization Temperature Dependence of Cavitation and Plastic Flow in the Tensile Deformation of Poly(ε-caprolactone)

2017 ◽  
Vol 121 (27) ◽  
pp. 6673-6684 ◽  
Author(s):  
Zhiyong Jiang ◽  
Ran Chen ◽  
Ying Lu ◽  
Ben Whiteside ◽  
Phil Coates ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Plastic Flow ◽  
Crystallization Temperature ◽  
Tensile Deformation

Morphology and interference color in spherulite of poly(trimethylene terephthalate) copolyester with bulky linking pendent group

2011 ◽  
Vol 13 (23) ◽  
pp. 11067 ◽  
Author(s):  
Hong-Bing Chen ◽  
Li Chen ◽  
Yi Zhang ◽  
Jing-Jing Zhang ◽  
Yu-Zhong Wang
Keyword(s):  
Interference Color ◽  
Pendent Group ◽  
Trimethylene Terephthalate

Temperature Dependence of the Critical Electron Dose for Fatty Acid Monolayers

1982 ◽  
Vol 40 ◽  
pp. 78-79
Author(s):  
Kenneth H. Downing ◽  
Robert M. Glaeser
Keyword(s):  
Electron Beam ◽  
Fatty Acid ◽  
Inelastic Scattering ◽  
Temperature Dependence ◽  
Structural Damage ◽  
Direct Result ◽  
Second Step ◽  
Strong Temperature Dependence ◽  
Electron Dose ◽  
Covalent Bonds

The structural damage of molecules irradiated by electrons is generally considered to occur in two steps. The direct result of inelastic scattering events is the disruption of covalent bonds. Following changes in bond structure, movement of the constituent atoms produces permanent distortions of the molecules. Since at least the second step should show a strong temperature dependence, it was to be expected that cooling a specimen should extend its lifetime in the electron beam. This result has been found in a large number of experiments, but the degree to which cooling the specimen enhances its resistance to radiation damage has been found to vary widely with specimen types.

Temperature Dependence of Magnetic Domains and Wall Structures

1972 ◽  
Vol 30 ◽  
pp. 496-497
Author(s):  
Sonoko Tsukahara ◽  
Tadami Taoka ◽  
Hisao Nishizawa
Keyword(s):  
Temperature Dependence ◽  
Domain Walls ◽  
Magnetic Domain ◽  
Iron Film ◽  
Objective Lens ◽  
Lorentz Microscopy ◽  
Domain Structures ◽  
Wall Structures ◽  
Crystal Films ◽  
Metallurgical Structure

The high voltage Lorentz microscopy was successfully used to observe changes with temperature; of domain structures and metallurgical structures in an iron film set on the hot stage combined with a goniometer. The microscope used was the JEM-1000 EM which was operated with the objective lens current cut off to eliminate the magnetic field in the specimen position. Single crystal films with an (001) plane were prepared by the epitaxial growth of evaporated iron on a cleaved (001) plane of a rocksalt substrate. They had a uniform thickness from 1000 to 7000 Å.The figure shows the temperature dependence of magnetic domain structure with its corresponding deflection pattern and metallurgical structure observed in a 4500 Å iron film. In general, with increase of temperature, the straight domain walls decrease in their width (at 400°C), curve in an iregular shape (600°C) and then vanish (790°C). The ripple structures with cross-tie walls are observed below the Curie temperature.

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

Scanning Transmission Electron Microscopy of Polyethylene Crystals

1980 ◽  
Vol 38 ◽  
pp. 242-245
Author(s):  
F. Khoury ◽  
L. H. Bolz
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Crystallization Temperature ◽  
Scanning Transmission Electron Microscopy ◽  
Growth Habit ◽  
Lateral Growth ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Growth Habits

The lateral growth habits and non-planar conformations of polyethylene crystals grown from dilute solutions (<0.1% wt./vol.) are known to vary depending on the crystallization temperature.1-3 With the notable exception of a study by Keith2, most previous studies have been limited to crystals grown at <95°C. The trend in the change of the lateral growth habit of the crystals with increasing crystallization temperature (other factors remaining equal, i.e. polymer mol. wt. and concentration, solvent) is illustrated in Fig.l. The lateral growth faces in the lozenge shaped type of crystal (Fig.la) which is formed at lower temperatures are {110}. Crystals formed at higher temperatures exhibit 'truncated' profiles (Figs. lb,c) and are bound laterally by (110) and (200} growth faces. In addition, the shape of the latter crystals is all the more truncated (Fig.lc), and hence all the more elongated parallel to the b-axis, the higher the crystallization temperature.

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