Characterization of argon ion irradiation induced changes in microstructure and mechanical property of binary Zr−2.9 wt.% Sn alloy

Author(s):  
Aruna Devi ◽  
S. Neogy ◽  
S.K. Sharma ◽  
R. Menon ◽  
R. Tewari
1991 ◽  
Vol 235 ◽  
Author(s):  
N. K. Huang ◽  
Z. R. Feng ◽  
Z. K. Xiong ◽  
D. Z. Wang ◽  
P. L. Wang

ABSTRACTZirconia-yttria films containing 8.0wt% Y2O3 were prepared on a Si substrate with r.f. magnetron sputtering deposition followed by 170 KeV Ar+ ion irradiation at room temperature. The characterization of these zirconia-yttria films with different ion bombarding doses has been studied by XRD, XPS and AES. It was found that all the films consisted of three portions, the amorphous films deposited with r.f. magnetron-sputtering were partially crystallized and nontransformable tetragonal (T') phase was detected after Ar+ ion bombardment of a dose of 1×1016 ion/cm2, and the oxidized states of Zr3d, Y3d and Ols peaks of XPS were observed under the conditions of argon ion bombardment of different doses.


2015 ◽  
Vol 17 (16) ◽  
pp. 10838-10848
Author(s):  
Annika Venäläinen ◽  
Minna T. Räisänen ◽  
Benoît Marchand ◽  
Kenichiro Mizohata ◽  
Jyrki Räisänen

Systematical investigation of Ar ion irradiation-induced changes in the surface morphology of bare and dodecanethiol self-assembled monolayer covered Au(111) surfaces.


Author(s):  
L. T. Germinario

Understanding the role of metal cluster composition in determining catalytic selectivity and activity is of major interest in heterogeneous catalysis. The electron microscope is well established as a powerful tool for ultrastructural and compositional characterization of support and catalyst. Because the spatial resolution of x-ray microanalysis is defined by the smallest beam diameter into which the required number of electrons can be focused, the dedicated STEM with FEG is the instrument of choice. The main sources of errors in energy dispersive x-ray analysis (EDS) are: (1) beam-induced changes in specimen composition, (2) specimen drift, (3) instrumental factors which produce background radiation, and (4) basic statistical limitations which result in the detection of a finite number of x-ray photons. Digital beam techniques have been described for supported single-element metal clusters with spatial resolutions of about 10 nm. However, the detection of spurious characteristic x-rays away from catalyst particles produced images requiring several image processing steps.


Author(s):  
H. Takaoka ◽  
M. Tomita ◽  
T. Hayashi

High resolution transmission electron microscopy (HRTEM) is the effective technique for characterization of detailed structure of semiconductor materials. Oxygen is one of the important impurities in semiconductors. Detailed structure of highly oxygen doped silicon has not clearly investigated yet. This report describes detailed structure of highly oxygen doped silicon observed by HRTEM. Both samples prepared by Molecular beam epitaxy (MBE) and ion implantation were observed to investigate effects of oxygen concentration and doping methods to the crystal structure.The observed oxygen doped samples were prepared by MBE method in oxygen environment on (111) substrates. Oxygen concentration was about 1021 atoms/cm3. Another sample was silicon of (100) orientation implanted with oxygen ions at an energy of 180 keV. Oxygen concentration of this sample was about 1020 atoms/cm3 Cross-sectional specimens of (011) orientation were prepared by argon ion thinning and were observed by TEM at an accelerating voltage of 400 kV.


2020 ◽  
Vol 62 (12) ◽  
pp. 1181-1186
Author(s):  
Huanchun Wu ◽  
Wenxin Ti ◽  
Guodong Zhang ◽  
Fei Xue ◽  
Chengtao Li ◽  
...  

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