scholarly journals Microscopic Mechanism of the Combined Magnetic-vibration Treatment for Residual Stress Reduction

2021 ◽  
pp. 104659
Author(s):  
Gang Huang ◽  
Qingdong Zhang ◽  
Boyang Zhang ◽  
Shuo Li
Author(s):  
J. Fang ◽  
H. M. Chan ◽  
M. P. Harmer

It was Niihara et al. who first discovered that the fracture strength of Al2O3 can be increased by incorporating as little as 5 vol.% of nano-size SiC particles (>1000 MPa), and that the strength would be improved further by a simple annealing procedure (>1500 MPa). This discovery has stimulated intense interest on Al2O3/SiC nanocomposites. Recent indentation studies by Fang et al. have shown that residual stress relief was more difficult in the nanocomposite than in pure Al2O3. In the present work, TEM was employed to investigate the microscopic mechanism(s) for the difference in the residual stress recovery in these two materials.Bulk samples of hot-pressed single phase Al2O3, and Al2O3 containing 5 vol.% 0.15 μm SiC particles were simultaneously polished with 15 μm diamond compound. Each sample was cut into two pieces, one of which was subsequently annealed at 1300° for 2 hours in flowing argon. Disks of 3 mm in diameter were cut from bulk samples.


Metals ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 127
Author(s):  
Zichen Liu ◽  
Xiaodong Hu ◽  
Zhiwei Yang ◽  
Bin Yang ◽  
Jingkai Chen ◽  
...  

In order to clarify the role of different post-weld heat treatment processes in the manufacturing process, welding tests, post-weld heat treatment tests, and finite element analysis (FEA) are carried out for 12C1MoV steel pipes. The simulated temperature field and residual stress field agree well with the measured results, which indicates that the simulation method is available. The influence of post-weld heat treatment process parameters on residual stress reduction results is further analyzed. It is found that the post weld dehydrogenation treatment could not release residual stress obviously. However, the residual stress can be relieved by 65% with tempering treatment. The stress relief effect of “post weld dehydrogenation treatment + temper heat treatment” is same with that of “temper heat treatment”. The higher the temperature, the greater the residual stress reduction, when the peak temperature is at 650–750 °C, especially for the stress concentration area. The longer holding time has no obvious positive effect on the reduction of residual stress.


2002 ◽  
Vol 749 ◽  
Author(s):  
Vincent Barrioz ◽  
Stuart J. C. Irvine ◽  
D. Paul

ABSTRACTZnS is a material of choice in the optical coating industry for its optical properties and broad transparency range. One of the drawbacks of ZnS is that it develops high compressive intrinsic stress resulting in large residual stress in the deposited layer. This paper concentrates on the evolution of residual stress reduction in ZnS single layers, depending upon their deposition rate or the substrate temperature during deposition (i.e. 22 °C and 133 °C). The substrate preparation is addressed for consideration of layer adhesion. Residual stress of up to − 550 MPa has been observed in amorphous/poor polycrystalline ZnS layers, deposited on CMX and Float glass type substrates, by electron beam evaporation at 22 °C, with a surface roughness between 0.4 and 0.8 nm. At 133 °C, the layer had a surface roughness of 1 nm, the residual stress in the layer decreased to − 150 MPa, developing a wurtzite structure with a (002) preferred orientation. In situ stress measurements, using a novel optical approach with a laser-fibre system, were carried out to identify the various sources of stress. A description of this novel in situ stress monitor and its advantages are outlined. The residual stress values were supported by two ex situ stress techniques. The surface morphology analysis of the ZnS layers was carried out using an atomic force microscope (AFM), and showed that stress reduced layers actually gave rougher surfaces.


Materials ◽  
2019 ◽  
Vol 12 (6) ◽  
pp. 930 ◽  
Author(s):  
Martin Malý ◽  
Christian Höller ◽  
Mateusz Skalon ◽  
Benjamin Meier ◽  
Daniel Koutný ◽  
...  

The aim of this study is to observe the effect of process parameters on residual stresses and relative density of Ti6Al4V samples produced by Selective Laser Melting. The investigated parameters were hatch laser power, hatch laser velocity, border laser velocity, high-temperature preheating and time delay. Residual stresses were evaluated by the bridge curvature method and relative density by the optical method. The effect of the observed process parameters was estimated by the design of experiment and surface response methods. It was found that for an effective residual stress reduction, the high preheating temperature was the most significant parameter. High preheating temperature also increased the relative density but caused changes in the chemical composition of Ti6Al4V unmelted powder. Chemical analysis proved that after one build job with high preheating temperature, oxygen and hydrogen content exceeded the ASTM B348 limits for Grade 5 titanium.


2016 ◽  
Vol 1812 ◽  
pp. 109-116
Author(s):  
César B. Pérez ◽  
C. Reyes-Betanzo

ABSTRACTAmorphous silicon (α-Si) was deposited on glass substrates by PECVD at different deposition conditions in order to characterize the residual stress on the film. Subsequently, a thermal-annealing was applied for different times at 400 °C in a N2 atmosphere, aiming to reduce the stress in the films. The deposition power was between 15 and 30 W at 13.56 MHz, the pressure in the chamber was adjusted in a range from 600 to 900 mTorr, and the temperature was varied from 140 to 200 °C. The stress was determined by using the Stoney equation, measuring the curvature and thickness of the α-Si films with a stylus profilometer. A deposition rate between 7-24 nm/min was obtained, and the time for thermal-annealing needed to reduce the stress was reduced from 10 to 2-4 h, obtaining a minimum compressive stress of 17 MPa. With this value of stress, it was possible to use the α-Si as masking material for wet etching of glass during the manufacturing of microfluidic devices, in order to obtain microstructures in the glass with 150 μm in depth.


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