Improving the spatial resolution of a magnetic force microscope tip via focused ion beam modification and magnetic film coating

2007 ◽  
Vol 56 (5) ◽  
pp. 365-368 ◽  
Author(s):  
H.S. Huang ◽  
M.W. Lin ◽  
Y.C. Sun ◽  
L.J. Lin
Keyword(s):  
Spatial Resolution ◽  
Magnetic Force ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Film Coating ◽  
Magnetic Film ◽  
Magnetic Force Microscope ◽  
Ion Beam Modification

scholarly journals Effect of Magnetic Film Thickness on the Spatial Resolution of Magnetic Force Microscope Tips

2011 ◽  
Vol 303 ◽  
pp. 012014 ◽  
Author(s):  
Katsumasa Nagano ◽  
Kousuke Tobari ◽  
Mitsuru Ohtake ◽  
Masaaki Futamoto
Keyword(s):  
Film Thickness ◽  
Spatial Resolution ◽  
Magnetic Force ◽  
Magnetic Film ◽  
Magnetic Force Microscope

Fluorocarbon Precursor for High Aspect Ratio via Milling in Focused Ion Beam Modification of Integrated Circuits

2004 ◽  
Author(s):  
Valery Ray
Keyword(s):  
Side Effects ◽  
Aspect Ratio ◽  
Integrated Circuits ◽  
High Aspect Ratio ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Enabling Technology ◽  
Si Substrate ◽  
Ion Beam Modification ◽  
The Past

Abstract Gas Assisted Etching (GAE) is the enabling technology for High Aspect Ratio (HAR) circuit access via milling in Focused Ion Beam (FIB) circuit modification. Metal interconnect layers of microelectronic Integrated Circuits (ICs) are separated by Inter-Layer Dielectric (ILD) materials, therefore HAR vias are typically milled in dielectrics. Most of the etching precursor gases presently available for GAE of dielectrics on commercial FIB systems, such as XeF2, Cl2, etc., are also effective etch enhancers for either Si, or/and some of the metals used in ICs. Therefore use of these precursors for via milling in dielectrics may lead to unwanted side effects, especially in a backside circuit edit approach. Making contacts to the polysilicon lines with traditional GAE precursors could also be difficult, if not impossible. Some of these precursors have a tendency to produce isotropic vias, especially in Si. It has been proposed in the past to use fluorocarbon gases as precursors for the FIB milling of dielectrics. Preliminary experimental evaluation of Trifluoroacetic (Perfluoroacetic) Acid (TFA, CF3COOH) as a possible etching precursor for the HAR via milling in the application to FIB modification of ICs demonstrated that highly enhanced anisotropic milling of SiO2 in HAR vias is possible. A via with 9:1 aspect ratio was milled with accurate endpoint on Si and without apparent damage to the underlying Si substrate.

scholarly journals High resolution magnetic force microscopy using focused ion beam modified tips

2002 ◽  
Vol 81 (5) ◽  
pp. 865-867 ◽  
Author(s):  
G. N. Phillips ◽  
M. Siekman ◽  
L. Abelmann ◽  
J. C. Lodder
Keyword(s):  
High Resolution ◽  
Magnetic Force Microscopy ◽  
Magnetic Force ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Force Microscopy

Localized High-Resolution Stress Measurements on MEMS Structures

2009 ◽  
Author(s):  
Dietmar Vogel ◽  
Astrid Gollhardt ◽  
Bernd Michel
Keyword(s):  
Raman Spectroscopy ◽  
High Resolution ◽  
Spatial Resolution ◽  
Focused Ion Beam ◽  
Stress Measurement ◽  
Ion Beam ◽  
Stress Relief ◽  
Stokes Line ◽  
Stress Measurements ◽  
Electron Backscattering

Three different methods of stress measurement with strong spatial resolution are presented. They base on stress relief techniques caused by focused ion beam milling, on altered electron backscattering by deformed lattices and on Stokes line shift measurements by Raman spectroscopy. The capability of these methods is demonstrated by their application to typical MEMS structures. A comparison between the methods is performed in order to outline potentials and limitations.

scholarly journals Focused Ion Beam Milled CoPt Magnetic Force Microscopy Tips for High Resolution Domain Images

2004 ◽  
Vol 40 (4) ◽  
pp. 2194-2196 ◽  
Author(s):  
L. Gao ◽  
L.P. Yue ◽  
T. Yokota ◽  
R. Skomski ◽  
S.H. Liou ◽  
...  
Keyword(s):  
High Resolution ◽  
Magnetic Force Microscopy ◽  
Magnetic Force ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Force Microscopy

Magnetic force microscopy and spinstand testing of multi-row-per-track discrete bit patterned media fabricated by focused ion beam

2009 ◽  
Vol 105 (7) ◽  
pp. 07C105 ◽  
Author(s):  
Y. J. Chen ◽  
T. L. Huang ◽  
S. H. Leong ◽  
S. B. Hu ◽  
K. W. Ng ◽  
...  
Keyword(s):  
Magnetic Force Microscopy ◽  
Magnetic Force ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Bit Patterned Media ◽  
Patterned Media ◽  
Force Microscopy

Recent Advances in The Application of Focused Ion Beams

1985 ◽  
Vol 45 ◽  
Author(s):  
Kenji Gamo ◽  
Susumu Namba
Keyword(s):  
Ion Implantation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Ion Beam Modification ◽  
Chemical Effects ◽  
Recent Advances ◽  
Maskless Patterning

Recent advances of focused ion beam systems and their applications are presented. The applications include maskless ion implantation and various maskless patterning techniques which make use of ion induced chemical effects. These are ion beam assisted etching, deposition and ion beam modification techniques and are promising to improve patterning speed and extend applications of focused ion beams.

Collision cascade limit to spatial resolution in focused ion beam processes

1991 ◽  
Vol 51 (1-2) ◽  
pp. 103-112 ◽  
Author(s):  
G. Betz ◽  
F. Rüdenauer
Keyword(s):  
Spatial Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Collision Cascade

Integrating electron and near-field optics: dual vision for the nanoworld

Nanophotonics ◽  
2014 ◽  
Vol 3 (1-2) ◽  
pp. 75-89 ◽  
Author(s):  
Nancy M. Haegel
Keyword(s):  
Focused Ion Beam ◽  
Dynamic Range ◽  
Ion Beam ◽  
Near Field ◽  
Transport Phenomena ◽  
Force Microscopy ◽  
Ion Beam Modification ◽  
Near Field Optics ◽  
Dual Beam ◽  
Scanning Optical Microscopy

AbstractThe integration of near-field scanning optical microscopy (NSOM) with the imaging and localized excitation capabilities of electrons in a scanning electron microscope (SEM) offers new capabilities for the observation of highly resolved transport phenomena in the areas of electronic and optical materials characterization, semiconductor nanodevices, plasmonics and integrated nanophotonics. While combined capabilities for atomic force microscopy (AFM) and SEM are of obvious interest to provide localized surface topography in concert with the ease and large spatial dynamic range of SEM and dual beam imaging (e.g., in-situ AFM following focused ion beam modification), integration with near-field optical imaging capability can also provide access to localized transport phenomena beyond the reach of far-field systems. In particular, the flexibility that is achieved with the capability for independent, high resolution placement of an electron source, providing localized excitation in the form of free carriers, photons or plasmons, with scanning of the optical collecting tip allows for unique types of “dual-probe” experiments that directly image energy transfer. We review integrated near-field and electron optics systems to date, highlight applications in a variety of fields and suggest future directions.

Microstructural Observation of Focused Ion Beam Modification of Ni Silicide/Si Thin Films

1996 ◽  
Vol 439 ◽  
Author(s):  
Miyoko Tanaka ◽  
Kazuo Furuya ◽  
Tetsuya Saito
Keyword(s):  
Structural Changes ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Dark Field ◽  
In Situ Tem ◽  
Si Substrate ◽  
Ion Beam Modification ◽  
Surrounding Matrix ◽  
Transmission Electron

AbstractFocused ion beam (FIB) irradiation of a thin Ni2Si layer deposited on a Si substrate was carried out and studied using an in-situ transmission electron microscope (in-situ TEM). Square areas on sides of 4 by 4 and 9 by 9 μm were patterned at room temperature with a 25keV Ga+-FIB attached to the TEM. The structural changes of the films indicate a uniform milling; sputtering of the Ni2Si layer and the damage introducing to the Si substrate. Annealing at 673 K results in the change of the Ni2Si layer into an epitaxial NiSi2 layer outside the FIB irradiated area, but several precipitates appear around the treated area. Precipitates was analyzed by energy dispersive X-ray spectroscopy (EDS). Larger amount of Ni than the surrounding matrix was found in precipitates. Selected area diffraction (SAD) patterns of the precipitates and the corresponding dark field images imply the formation of a Ni rich silicide. The relation between the FIB tail and the precipitation is indicated.

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