Efficient extraction and separation of indium from waste indium–tin oxide (ITO) targets by enhanced ammonium bisulfate leaching

2021 ◽  
Vol 269 ◽  
pp. 118766
Author(s):  
Yangyang Fan ◽  
Yan Liu ◽  
Liping Niu ◽  
Weiguang Zhang ◽  
Ting-an Zhang
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Extraction And Separation ◽  
Efficient Extraction ◽  
Ammonium Bisulfate

scholarly journals Optimization of Indium Recovery and Separation from LCD Waste by Solvent Extraction with Bis(2-ethylhexyl) Phosphate (D2EHPA)

2014 ◽  
Vol 2014 ◽  
pp. 1-9 ◽  
Author(s):  
Jiaxu Yang ◽  
Christian Ekberg ◽  
Teodora Retegan
Keyword(s):  
Liquid Crystal ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Liquid Crystal Displays ◽  
Extractant Concentration ◽  
Extraction And Separation ◽  
Effects Of Ph ◽  
Aqueous Feed ◽  
Temperature Time ◽  
Panel Glass

Indium tin oxide (ITO) is currently the choice of electrode material in liquid crystal displays (LCDs). D2EHPA is known to be an extractant that can be used to selectively recover indium from 1 M sulfuric acid. In order to optimize the extraction and separation of indium from LCD waste, the effects of pH, temperature, time, and extractant concentration on the distribution ratios of In(III) and the major impurities such as Al(III), Cu(II), Fe(III), and Zn(II) were investigated. Metal concentrations in the aqueous feed were based on the concentrations found in the leach liquor of LCD panel glass at 0.1 g/mL S/L ratio. This study showed that extraction of indium could be increased at <293 K and stripping of indium could be increased at >293 K. Furthermore, by increasing D2EHPA concentration from 0.1 M to 0.25 M, extraction of indium could be increased from 70% to >95%.

Fan-shaped mid-infrared chiral metamaterials based on indium tin oxide and their circular dichroism

2020 ◽  
Vol 13 (4) ◽  
pp. 722-727
Author(s):  
ZHU Ye-xin ◽  
◽  
◽  
LI Ya-nan ◽  
SHI Wei-jie ◽  
...  
Keyword(s):  
Circular Dichroism ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Mid Infrared ◽  
Chiral Metamaterials ◽  
Circular Dichroïsm

Indium tin oxide/GaAs photodiodes for millimetric-wave applications

1986 ◽  
Vol 22 (23) ◽  
pp. 1266 ◽  
Author(s):  
D.G. Parker ◽  
P.G. Say
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Millimetric Wave

Indium–tin oxide film electrode as catalytic amperometric sensor for hydrogen peroxide

The Analyst ◽  
1995 ◽  
Vol 120 (10) ◽  
pp. 2579-2583 ◽  
Author(s):  
Xiaohua Cai ◽  
Božidar Ogorevc ◽  
Gabrijela Tavčar ◽  
Joseph Wang
Keyword(s):  
Hydrogen Peroxide ◽  
Oxide Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Amperometric Sensor ◽  
Film Electrode

Plasma-assisted deposition of indium tin oxide thin films by sublimation using an anodic vacuum arc discharge

2021 ◽  
pp. 138731
Author(s):  
Bert Scheffel ◽  
Olaf Zywitzki ◽  
Thomas Preußner ◽  
Torsten Kopte
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Arc Discharge ◽  
Vacuum Arc ◽  
Oxide Thin Films

scholarly journals Optoelectronic Properties of Ultrathin Indium Tin Oxide Films: A First-Principle Study

Crystals ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 30
Author(s):  
Xiaoyan Liu ◽  
Lei Wang ◽  
Yi Tong
Keyword(s):  
Film Thickness ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Density Functional ◽  
Optoelectronic Properties ◽  
Surface Strain ◽  
Strain Effect ◽  
First Principle ◽  
Electrical Resistivities ◽  
Ito Films

First-principle density functional theory simulations have been performed to predict the electronic structures and optoelectronic properties of ultrathin indium tin oxide (ITO) films, having different thicknesses and temperatures. Our results and analysis led us to predict that the physical properties of ultrathin films of ITO have a direct relation with film thickness rather than temperature. Moreover, we found that a thin film of ITO (1 nm thickness) has a larger absorption coefficient, lower reflectivity, and higher transmittance in the visible light region compared with that of 2 and 3 nm thick ITO films. We suggest that this might be due to the stronger surface strain effect in 1 nm thick ITO film. On the other hand, all three thin films produce similar optical spectra. Finally, excellent agreement was found between the calculated electrical resistivities of the ultrathin film of ITO and that of its experimental data. It is concluded that the electrical resistivities reduce along with the increase in film thickness of ITO because of the short strain length and limited bandgap distributions.

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