Investigation on characteristics of Monte Carlo model of single electron transistor using Orthodox theory

2021 ◽  
Vol 48 ◽  
pp. 101601
Author(s):  
Ngangbam Phalguni Singh ◽  
Shruti Suman ◽  
Thandaiah Prabu Ramachandran ◽  
Tripti Sharma ◽  
Selvakumar Raja ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Model ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Orthodox Theory

scholarly journals Orthodox Theory Monte-Carlo Simulation of Single-Electron Logic Circuits

2019 ◽  
pp. 241-247
Keyword(s):  
Monte Carlo ◽  
Logic Circuits ◽  
Single Electron ◽  
Measurement Results ◽  
Single Electronics ◽  
Different Temperatures ◽  
Orthodox Theory ◽  
Single Electron Devices ◽  
Electron Devices ◽  
Integrated Logic

In the past decades MOS based digital integrated logic circuits have undergone a successful process of miniaturisation eventually leading to dimensions of a few nanometres. With the dimensions in the range of a few atomic radii the end of conventional MOS technology is approaching. Amongst the prospective candidates for sub 10nm logic are integrated logic circuits based on single-electron devices. In our contribution we present the use of MOSES (Monte-Carlo Single-Electronics Simulator) as a method for simulation of complementary single-electron logic circuits based on the orthodox theory. Simulations of single-electron devices including a single-electron box, a single-electron transistor and a complementary single-electron inverter were carried out. Their characteristics were evaluated at different temperatures and compared to measurement results obtained at other institutions. The potential for room-temperature operation was also assessed.

TRIPLE-TUNNEL JUNCTION SINGLE ELECTRON TRANSISTOR (TTJ-SET)

2011 ◽  
Vol 25 (17) ◽  
pp. 1487-1501
Author(s):  
ALI SHAHHOSEINI ◽  
KAMYAR SAGHAFI ◽  
MOHAMMAD KAZEM MORAVVEJ-FARSHI ◽  
RAHIM FAEZ
Keyword(s):  
Monte Carlo ◽  
Quantum Dot ◽  
Excellent Agreement ◽  
Tunnel Junction ◽  
Tunnel Junctions ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Macro Model ◽  
Half Wave

We propose a triple-tunnel junction single electron transistor (TTJ-SET). The proposed structure consists of a metallic quantum-dot island that is capacitive coupled to a gate contact and surrounded by three tunnel junctions. To the best of our knowledge, this is the first instance of introducing this new structure that is suitable for both digital and analog applications. I–V D characteristics of the proposed TTJ-SET, simulated by a HSPICE macro model for various gate voltages, are in excellent agreement with those obtained by SIMON, which is a Monte-Carlo based simulator. We show how one can design a digital inverter by using a single TTJ-SET. We also show that, under suitable conditions, a TTJ-SET can operate as a full- or half-wave analog rectifier.

scholarly journals Conductance of the single-electron transistor: A comparison of experimental data with Monte Carlo calculations

2002 ◽  
Vol 66 (12) ◽  
Author(s):  
C. Wallisser ◽  
B. Limbach ◽  
P. vom Stein ◽  
R. Schäfer ◽  
C. Theis ◽  
...  
Keyword(s):  
Experimental Data ◽  
Monte Carlo ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Monte Carlo Calculations

scholarly journals Analytic I–V Model for Single-Electron Transistors

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 189-192 ◽  
Author(s):  
Xiaohui Wang ◽  
Wolfgang Porod
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Analytical Model ◽  
Excellent Agreement ◽  
Full Scale ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Single Electron Transistors ◽  
Circuit Simulator ◽  
Electron Transistors

We present an analytical model for the I–V characteristics of a single-electron transistor, which may be incorporated in a conventional circuit simulator, such as SPICE. Our model takes as its input the physical SET characteristics (capacitances and tunnel resistances, which may be determined experimentally), and it yields I–V curves which are in excellent agreement with the ones obtained from full-scale Monte Carlo simulations.

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