Z-scheme induced g-C3N4 /WS2 heterojunction photocatalyst with improved electron mobility for enhanced solar photocatalysis

Solar photocatalysis as a potential green technology for the removal of traces of the dye pollutant Indigo carmine (IC) from water is investigated using ZnO as the catalyst. Degradation/decolorization alone does not result in complete decontamination as seen from the significant Chemical Oxygen Demand (COD) of water even after the parent compound has disappeared completely. The degradation proceeds through many intermediates which also get mineralized eventually but slowly. Oxalic acid is identified as a stable slow mineralizing degradation product which itself is formed from other transient intermediates. Effect of various parameters such as catalyst dosage, concentration of the dye, pH, temperature, presence of contaminant salts etc. on the degradation is investigated and quantified. Oxidants such as S2O82- and H2O2 have only moderate influence on the degradation. The degradation follows variable kinetics depending on the concentration of the substrate. The reaction proceeds very slowly in the absence of O2 indicating the importance of reactive oxygen species and hydroxyl free radicals in photocatalysis. H2O2 formed insitu in the system undergoes concurrent decomposition resulting in stabilization in its concentration. The study demonstrates that solar photocatalysis can be used as a viable tool for the purification of water contaminated with traces of IC.

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Influence of hydrostatic pressure on the electron mobility and the correlation properties of a mixed-valence system of iron impurity ions in HgSe:Fe crystals

Semiconductors ◽

10.1134/1.1187221 ◽

1997 ◽

Vol 31 (6) ◽

pp. 580

Author(s):

I. G. Kuleev

Keyword(s):

Hydrostatic Pressure ◽

Electron Mobility ◽

Mixed Valence ◽

Iron Impurity ◽

Impurity Ions ◽

Correlation Properties

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Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4935223 ◽

2015 ◽

Vol 107 (19) ◽

pp. 193506 ◽

Cited By ~ 36

Author(s):

M. Ťapajna ◽

O. Hilt ◽

E. Bahat-Treidel ◽

J. Würfl ◽

J. Kuzmík

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Packing Effect on the Transfer Integrals and Mobility in α,α′-bis(dithieno[3,2-b:2′,3′-d]thiophene) (BDT) and its Heteroatom-Substituted Analogues

Australian Journal of Chemistry ◽

10.1071/ch11162 ◽

2011 ◽

Vol 64 (12) ◽

pp. 1587 ◽

Cited By ~ 25

Author(s):

Ahmad Irfan ◽

Abdullah G. Al-Sehemi ◽

Shabbir Muhammad ◽

Jingping Zhang

Keyword(s):

Electron Transfer ◽

Electron Mobility ◽

Hole Mobility ◽

Experimental Investigations ◽

Hole Transfer ◽

Space Group ◽

Space Groups ◽

Transfer Integrals ◽

Packing Effect ◽

Good Agreement

Theoretically calculated mobility has revealed that BDT is a hole transfer material, which is in good agreement with experimental investigations. The BDT, NHBDT, and OBDT are predicted to be hole transfer materials in the C2/c space group. Comparatively, hole mobility of BHBDT is 7 times while electron mobility is 20 times higher than the BDT. The packing effect for BDT and designed crystals was investigated by various space groups. Generally, mobility increases in BDT and its analogues by changing the packing from space group C2/c to space groups P1 or . In the designed ambipolar material, BHBDT hole mobility has been predicted 0.774 and 3.460 cm2 Vs–1 in space groups P1 and , which is 10 times and 48 times higher than BDT (0.075 and 0.072 cm2 Vs–1 in space groups P1 and ), respectively. Moreover, the BDT behaves as an electron transfer material by changing the packing from the C2/c space group to P1 and .

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Fully Transparent AlGaN/GaN High Electron Mobility Transistors Fabricated with Indium-Tin-Oxide Electrodes

IEEE Electron Device Letters ◽

10.1109/led.2020.3048009 ◽

2020 ◽

pp. 1-1

Author(s):

Chih-Yao Chang ◽

Chun-Ta Hsu ◽

Yao-Luen Shen ◽

Tian-Li Wu ◽

Wei-Hung Kuo ◽

...

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Oxide Electrodes

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Effect of Growth Temperature on the Characteristics of CsPbI3-Quantum Dots Doped Perovskite Film

Molecules ◽

10.3390/molecules26154439 ◽

2021 ◽

Vol 26 (15) ◽

pp. 4439

Author(s):

Shui-Yang Lien ◽

Yu-Hao Chen ◽

Wen-Ray Chen ◽

Chuan-Hsi Liu ◽

Chien-Jung Huang

Keyword(s):

Thin Films ◽

Thermal Stability ◽

Quantum Dots ◽

Quantum Dot ◽

Growth Temperature ◽

Electron Mobility ◽

Surface Defects ◽

Different Temperatures ◽

Pb Doping ◽

Pristine Film

In this study, adding CsPbI3 quantum dots to organic perovskite methylamine lead triiodide (CH3NH3PbI3) to form a doped perovskite film filmed by different temperatures was found to effectively reduce the formation of unsaturated metal Pb. Doping a small amount of CsPbI3 quantum dots could enhance thermal stability and improve surface defects. The electron mobility of the doped film was 2.5 times higher than the pristine film. This was a major breakthrough for inorganic quantum dot doped organic perovskite thin films.

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