The Change in Electron Mobility in Indium Antimonide at Low Electric Field

1960 ◽  
Vol 15 (5) ◽  
pp. 830-835 ◽  
Author(s):  
Yasuo Kanai
Keyword(s):  
Electric Field ◽  
Indium Antimonide ◽  
Electron Mobility

INFLUENCE OF NONLINEAR ELECTRON MOBILITY ON RESPONSE TIME IN PHOTOREFRACTIVE SEMICONDUCTOR QUANTUM WELLS

2012 ◽  
Vol 21 (04) ◽  
pp. 1250050 ◽  
Author(s):  
MAREK WICHTOWSKI ◽  
ANDRZEJ ZIOLKOWSKI ◽  
EWA WEINERT-RACZKA ◽  
BLAZEJ JABLONSKI ◽  
WOJCIECH KARWECKI
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Electron Mobility ◽  
Hot Electrons ◽  
Nonlinear Transport ◽  
Field Range ◽  
Fringe Contrast ◽  
Recording Time ◽  
Semiconductor Quantum Wells ◽  
Charge Field

Nonlinear transport of hot electrons in semi-insulating GaAs / AlGaAs quantum wells significantly affects their photorefractive properties. In case of two waves mixing, this influence consists, among others, in an increased shift of photorefractive grating relative to light intensity distribution. The influence of nonlinear transport on grating recording time is less examined experimentally and theoretically. This study compares numerical and analytical solutions describing grating dynamics in approximation of small fringe contrast. The influence of nonlinear electron mobility on space-charge field was examined depending on external electric field intensity and on the grating constant. It was found that in the electric field range below 20 kV/cm, the nonlinear transport of electrons does not shorten the grating generation time.

scholarly journals Anisotropic Diffusion and the Townsend?Huxley Experiment

1973 ◽  
Vol 26 (4) ◽  
pp. 469 ◽  
Author(s):  
JJ Lowke
Keyword(s):  
Experimental Data ◽  
Electric Field ◽  
Electron Mobility ◽  
Diffusion Coefficients ◽  
Applied Electric Field ◽  
Anisotropic Diffusion ◽  
Diffusion Tubes ◽  
New Formula ◽  
The Relationship ◽  
Diffusion Tube

The relationship between current ratios and electron diffusion coefficients for the Townsend-Huxley experiment is reanalysed with the assumption that diffusion can be represented by two coefficients DT and DL for diffusion transverse and parallel respectively to the applied electric field. When the new formula is used to interpret previous experimental data obtained with a diffusion tube of length 2 cm, the derived values of DT/fl become independent of pressure (fl being the electron mobility). For longer diffusion tubes (~ 6 cm), current ratios are insensitive to DL and the results differ insignificantly from those obtained using the formula previously derived on the assumption that diffusion is isotropic.

Relative Analysis of GaAs, InSb, InP Using QWFET

2014 ◽  
Vol 984-985 ◽  
pp. 1080-1084 ◽  
Author(s):  
T.D. Subash ◽  
T. Gnanasekaran ◽  
J. Jagannathan ◽  
C. Divya
Keyword(s):  
Gallium Arsenide ◽  
Band Structure ◽  
Indium Phosphide ◽  
Low Power ◽  
Indium Antimonide ◽  
Electron Mobility ◽  
High Speed ◽  
Simulation Tool ◽  
Saturation Velocity ◽  
Relative Analysis

Indium Antimonide (InSb) has the greater electron mobility and saturation velocity of any semiconductor. Also InSb detectors are sensitive between 1–5 μm wavelengths and it belongs to III-V [13] component. In this paper we compare the InSb with some other major components like Indium Phosphide (InP) and Gallium Arsenide (GaAs) which are also from same III-V group. The analysis was made using the simulation tool TCAD and using the properties and band structure of those materials we compare InSb with InP and GaAs. The results we proposed shows that InSb is best for ultra high speed and very low power applications.

Improved Channel Electron Mobility Through Electric Field Reduction in GaN Quantum-Well Double-Heterostructures

2021 ◽  
pp. 1-1
Author(s):  
Junya Yaita ◽  
Koichi Fukuda ◽  
Atsushi Yamada ◽  
Takuya Iwasaki ◽  
Shu Nakaharai ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Electron Mobility ◽  
Double Heterostructures

Thickness dependence of electron transport in pure a-Se photoconductive films

2014 ◽  
Vol 92 (7/8) ◽  
pp. 629-633 ◽  
Author(s):  
Derek Mortensen ◽  
George Belev ◽  
Kirill (Cyril) Koughia ◽  
Robert E. Johanson ◽  
S.O. Kasap
Keyword(s):  
Thin Films ◽  
Electron Transport ◽  
Electric Field ◽  
Density Of States ◽  
Electron Mobility ◽  
Constant Electric Field ◽  
Thickness Dependence ◽  
The Other ◽  
Electron Lifetime ◽  
Thickness Independent

Electron transport in vacuum-deposited a-Se films with thicknesses varying from 13 to 501 μm has been investigated by conventional time-of-flight (TOF) and interrupted field TOF experiments. To separate the influences of electric field and the thickness, all TOF experiments were performed at a constant electric field. It has been found that the electron mobility is relatively constant in thick films (L > 50 μm) and increases in thinner films (L < 50 μm) with decreasing thickness. On the other hand, the electron lifetime is relatively thickness independent in films with thickness L > 50 μm, but drops sharply in thin films when L < 50 μm. These observations can be explained based on the density of states model that includes three types of traps forming Gaussian-like distributions within the mobility gap as reported in Koughia et al. (J. Appl. Phys. 97, 033706 (2005)).

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