Synthesis of bismuth sulphoiodide thin films from single precursor solution

Solar Energy ◽  
2021 ◽  
Vol 230 ◽  
pp. 714-720
Author(s):  
Vipinraj Sugathan ◽  
Biplab Ghosh ◽  
Pandinhare C. Harikesh ◽  
Vishal Kotha ◽  
Parth Vashishtha ◽  
...  
Keyword(s):  
Thin Films ◽  
Precursor Solution ◽  
Single Precursor

Sol-gel synthesis of textured lanthanum titanate thin films

2003 ◽  
Vol 18 (2) ◽  
pp. 357-362 ◽  
Author(s):  
Mary M. Sandstrom ◽  
Paul Fuierer
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Precursor Solution ◽  
Solution Concentration ◽  
Optical Measurements ◽  
Layered Perovskite ◽  
Orientation Factor ◽  
Anisotropic Structures ◽  
Sol Gel Films ◽  
Sol Gel Synthesis

Control over crystallographic orientation in thin films is important, particularly with highly anisotropic structures. Because of its ferroelectric nature, the layered perovskite La2Ti2O7 has interesting piezoelectric and electrooptic properties that may be exploited when films are highly textured. Sol-gel films with an orientation factor of greater than 95% were fabricated without relying on epitaxial (lattice-matching) growth from the substrate. Film orientation and crystallization were confirmed by x-ray diffraction, scanning electron microscopy, atomic force microscopy, and optical measurements. The particle sizes in all precursor solutions were measured by dynamic light scattering experiments. Experimental results indicate that film orientation is a function of precursor solution concentration, size of the molecular clusters in the solution, and film thickness.

ITO Thin Films on Silicon Buffer by Sol Gel Method

2006 ◽  
Vol 514-516 ◽  
pp. 1155-1160 ◽  
Author(s):  
Talaat Moussa Hammad
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Optical Transmission ◽  
Sol Gel ◽  
Precursor Solution ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ito Thin Films ◽  
Uv Visible

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.

Effect of Precursor Sol Ageing on Sol-Gel Derived Ruthenium Oxide Thin Films

1999 ◽  
Vol 606 ◽  
Author(s):  
S. Bhaskar ◽  
S. B. Majumder ◽  
P. S. Dobal ◽  
R. S. Katiyar ◽  
A. L. M. Cruz ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Ruthenium Oxide ◽  
Precursor Solution ◽  
Silicon Substrates ◽  
Solution Deposition ◽  
Precursor Material ◽  
Afm Analysis

AbstractIn the present work we have optimized the process parameters to yield homogeneous, smooth ruthenium oxide (RuO2) thin films on silicon substrates by a solution deposition technique using RuCl3.×.H2O as the precursor material. Films were annealed in a temperature range of 300°C to 700°C, and it was found that RuO2 crystallizes at a temperature as low as 400°C. The crystallinity of the films improves with increased annealing temperature and the resistivity decreases from 4.86µΩ-m (films annealed at 400°C) to 2.94pµΩ (films annealed at 700°C). Ageing of the precursor solution has a pronounced effect on the measured resistivities of RuO2 thin films. It was found that the measured room temperature resistivities increases from 2.94µΩ-m to 45.7µΩ-m when the precursor sol is aged for aged 60 days. AFM analysis on the aged films shows that the grain size and the surface roughness of the annealed films increase with the ageing of the precursor solution. From XPS analysis we have detected the presence of non-transformed RuCl3 in case of films prepared from aged solution. We propose, that solution ageing inhibits the transformation of RuCl3 to RuO2 during the annealing of the films. The deterioration of the conductivity with solution ageing is thought to be related with the chloride contamination in the annealed films.

scholarly journals Morphological and Structural Evolution of Chemically Deposited Epitaxially LaNiO3 Thin Films

Coatings ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1376
Author(s):  
Mircea Nasui ◽  
Ramona Bianca Sonher ◽  
Ecaterina Ware ◽  
Andrada Daniel ◽  
Traian Petrisor ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Analyses ◽  
Structural Evolution ◽  
Precursor Solution ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Out Of Plane ◽  
Optimal Surface ◽  
Decomposition Behavior ◽  
Surface Morphologies

We report the preparation and characterization of epitaxial LaNiO3 (LNO) thin films by chemical solution deposition method using lanthanum and nickel acetylacetonates as starting reagents dissolved in propionic acid. In order to obtain further information regarding the decomposition behavior of the film, the precursor solution was dried to obtain the precursor powder, which was investigated by thermal analyses and X-ray diffraction measurements (XRD). The LNO perovskite thin films were deposited by spin coating on SrTiO3(100) single crystal substrates. A detailed study with different crystallization temperatures (600–900 °C) at two different heating ramps (5 and 10 °C/min) was performed. Oriented LaNiO3 thin films with good out-of-plane textures were obtained with optimal surface morphologies.

scholarly journals Influence of Ag-Dopant on Structural Optical and Electrical Properties of Cu(1-x)AgxO Thin Films Prepared By Chemical Spray Pyrolysis Technique

2018 ◽  
Vol 4 (5) ◽  
pp. 542-545 ◽  
Author(s):  
R. Shabu ◽  
A. Moses Ezhil Raj
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Spray Pyrolysis ◽  
Optical Band Gap ◽  
Spray Pyrolysis Technique ◽  
Precursor Solution ◽  
Oxide Semiconductor ◽  
Chemical Spray Pyrolysis ◽  
Chemical Spray Pyrolysis Technique ◽  
Chemical Spray

As major attention has been paid to transition metal oxide semiconductor suitable for solar cell, photo detector and gas sensor, present study embark on the structural, optical and electrical characterization of Ag doped CuO thin films prepared using chemical spray pyrolysis technique at the constant substrate temperature of 350 �C. For Ag doping, various concentrations of silver acetate (0.5-3.0 wt.%) was used in the sprayed precursor solution. Confirmed monoclinic lattice shows the tenorite phase formation of CuO in the pure and Ag doped films. The optical band gap of the films was in the range of 2.4 -3.4 eV. A minimum resistivity of 0.0017x103 ohmcm was achieved in the 0.5 wt.% Ag doped film, and its optical band gap was 2.74 eV.

Investigation on V2O5 Thin Films Prepared by Spray Pyrolysis Technique

2018 ◽  
Vol 17 (03) ◽  
pp. 1760037 ◽  
Author(s):  
A. Nancy Anna Anasthasiya ◽  
K. Gowtham ◽  
R. Shruthi ◽  
R. Pandeeswari ◽  
B. G. Jeyaprakash
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Spray Pyrolysis ◽  
Glass Substrate ◽  
Spray Pyrolysis Technique ◽  
Precursor Solution ◽  
Xrd Pattern ◽  
Good Crystallinity ◽  
Solution Volume

The spray pyrolysis technique was employed to deposit V2O5 thin films on a glass substrate. By varying the precursor solution volume from 10[Formula: see text]mL to 50[Formula: see text]mL in steps of 10[Formula: see text]mL, films of various thicknesses were prepared. Orthorhombic polycrystalline V2O5 films were inferred from the XRD pattern irrespective of precursor solution volume. The micro-Raman studies suggested that annealed V2O5 thin film has good crystallinity. The effect of precursor solution volume on morphological and optical properties were analysed and reported.

Effect of the Hf content on the microstructure and ferroelectric properties of HfxZr1−xO2 thin films using an all-inorganic aqueous precursor solution

Nanoscale ◽  
2021 ◽  
Vol 13 (38) ◽  
pp. 16216-16225
Author(s):  
Jingjing Wang ◽  
Dayu Zhou ◽  
Wei Dong ◽  
Ziqi Li ◽  
Nana Sun ◽  
...  
Keyword(s):  
Thin Films ◽  
Inorganic Salt ◽  
Ferroelectric Properties ◽  
Precursor Solution ◽  
Ferroelectric Thin Films ◽  
20 Nm

20 nm thick Hf-doped ZrO2-based ferroelectric thin films were prepared using all-inorganic salt precursors through the CSD method.

Synthesis, Properties, and Applications of Special Substrates Coated by Titanium Dioxide Nanostructured Thin Films via Sol-Gel Process

2011 ◽  
pp. 246-279
Author(s):  
Hamid Dadvar ◽  
Farhad E. Ghodsi ◽  
Saeed Dadvar
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Sol Gel ◽  
Precursor Solution ◽  
Tio2 Thin Films ◽  
Simple Method ◽  
Nanostructured Thin Films ◽  
Precursor Material ◽  
Synthesis Properties ◽  
Antibacterial Surfaces

In this chapter, the sol-gel made titanium dioxide nanostructured thin films deposited on special substrates such as glasses, mica, steels, textiles, fibers, and other organic/inorganic substrates were reviewed. Through this review, several distinctive properties such as optical, electrical, photocatalytic, morphological, and mechanical properties of TiO2 nanostructured thin films were described. Also, a wide range of practical application of TiO2 nanostructured thin films such as dye-sensitised solar cells, optical coatings, humidity and gas sensors, selfcleaning, dielectric, and antibacterial surfaces were discussed in details. Dip and spin coating techniques were demonstrated as suitable methods for deposition of thin films. It has been shown that properties of such films can be affected by type of coating technique, stabilizer, precursor material, solvents, pH and viscosity of precursor solution, aging, and etc. Finally, Successive Interference Fringes Method (SIFM) was presented as a simple method for the determination of optical constants and thickness of TiO2 thin films from single transmission measurements.

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