Impact of the reverse bias voltage on the lifetime of polymer solar cells

AbstractThe short circuit current and conversion efficiency of the poly(multi)-crystalline solar cells are increased by the passivation process using hydrogen plasma. The passivation rate apparently increases at a reverse bias voltage near 0.6V during the hydrogenation process. The effects of the bias voltage on the passivation are large at the substrate temperatures between 200C and 250C. The phenomena are likely due to the existence of positively-ionized hydrogen, H+. The H+ ions can be accelerated from the surface into the bulk by the electric field with the negative bias. The possibility of the H+ ions in the bulk silicon has been predicted in the previous reports. The increase of the incorporated hydrogen is confirmed by IR absorption measurements. The enhanced diffusion of hydrogen induced by the reverse bias is supported by the results of spectral response characteristics of the hydrogenated solar cells.

Download Full-text

Differences in Reverse Bias Voltage Behavior of n-type and p-type Multicrystalline Solar Cells

Energy Procedia ◽

10.1016/j.egypro.2012.07.037 ◽

2012 ◽

Vol 27 ◽

pp. 109-115

Author(s):

P.C.P. Bronsveld ◽

G. Coletti ◽

P. Barton ◽

P. Manshanden ◽

L.J. Geerligs

Keyword(s):

Solar Cells ◽

Bias Voltage ◽

Reverse Bias ◽

Reverse Bias Voltage ◽

P Type

Download Full-text

Квантовый выход кремниевого лавинного фотодиода в диапазоне длин волн 120-170 nm

Журнал технической физики ◽

10.21883/jtf.2020.08.49552.44-20 ◽

2020 ◽

Vol 90 (8) ◽

pp. 1386

Author(s):

П.Н. Аруев ◽

В.П. Белик ◽

В.В. Забродский ◽

Е.М. Круглов ◽

А.В. Николаев ◽

...

Keyword(s):

Quantum Yield ◽

Wavelength Range ◽

Bias Voltage ◽

Reverse Bias ◽

Avalanche Photodiode ◽

Reverse Bias Voltage ◽

External Quantum Yield

The external quantum yield of silicon avalanche photodiode in the wavelength range of 120-170 nm was performed. It was shown that the engineered avalanche photodiode has the external quantum yield of 24-150 electron/proton under reverse bias voltage of 230-345 V, respectively. The testing of worked out avalanche photodiode by means of pulse flash of 280 and 340 nm wavelength demonstrates the speed, corresponding to the bandwidth not less than 25 MHz.

Download Full-text

Optical detected magnetic resonance of nitrogen-vacancy centers in vertical diamond Schottky diode

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/ac4659 ◽

2021 ◽

Author(s):

Muhammad Hafiz bin Abu Bakar ◽

Aboulaye Traore ◽

Junjie Guo ◽

Toshiharu MAKINO ◽

Masahiko Ogura ◽

...

Keyword(s):

Magnetic Resonance ◽

Bias Voltage ◽

Schottky Diode ◽

Stark Effect ◽

Reverse Bias ◽

Nitrogen Vacancy ◽

Reverse Bias Voltage ◽

Zero Phonon Line ◽

Optically Detected ◽

Nv Centers

Abstract Diamond solid-state devices are very attractive to electrically control the charge state of Nitrogen-Vacancy (NV) centers. In this work, Vertical p-type Diamond Schottky Diode (VDSDs) is introduced as a platform to electrically control the interconversion between the neutral charge NV (NV0) and negatively charged NV (NV-) centers. The photoluminescence (PL) of NV centers generated by ion-implantation in VDSDs shows the increase of NV- Zero Phonon Line (ZPL) and phonon sideband (PBS) intensities with the reverse voltage, whereas the NV0 ZPL intensity decreases. Thus, NV centers embedded into VDSDs are converted into NV- under reverse bias voltage. Moreover, the optically detected magnetic resonance (ODMR) of NV- exhibits an increase in the ODMR contrast with the reverse bias voltage and splitting of the resonance dips. Since no magnetic is applied, such a dip splitting in ODMR spectrum is ascribed the Stark effect induced by the interaction of NV- with the electric field existing within the depletion region of VDSDs.

Download Full-text

Photoresponse Linearity of a-Si:H Imaging Pixels

MRS Proceedings ◽

10.1557/proc-297-951 ◽

1993 ◽

Vol 297 ◽

Cited By ~ 9

Author(s):

J. Yorkston ◽

L.E. Antonuk ◽

W. Huang ◽

R.A. Street

Keyword(s):

Amorphous Silicon ◽

Bias Voltage ◽

Linear Response ◽

Reverse Bias ◽

Reverse Bias Voltage ◽

Imaging Arrays ◽

Low Contrast ◽

X Ray

Amorphous silicon imaging arrays with ∼3×105 pixels have recently been developed and x-ray images of low contrast anatomical phantoms have been demonstrated. This paper reports on the linearity of response of these a-Si:H imaging pixels as a function of reverse bias voltage. The fraction of the imaging pixel's full signal range that maintains a linear response has been found to increase with increasing voltage.

Download Full-text