MOCVD growth and properties of Zn3P2 and Cd3P2 films for thermal photovoltaic applications

2004 ◽  
Vol 82 (1-2) ◽  
pp. 241-252 ◽  
Author(s):  
A Hermann
Author(s):  
Liwen Sang ◽  
Meiyong Liao ◽  
Masatomo Sumiya ◽  
Xuelin Yang ◽  
Bo Shen

Author(s):  
J.P.S. Hanjra

Tin mono selenide (SnSe) with an energy gap of about 1 eV is a potential material for photovoltaic applications. Various authors have studied the structure, electronic and photoelectronic properties of thin films of SnSe grown by various deposition techniques. However, for practical photovoltaic junctions the electrical properties of SnSe films need improvement. We have carried out investigations into the properties of flash evaporated SnSe films. In this paper we report our results on the structure, which plays a dominant role on the electrical properties of thin films by TEM, SEM, and electron diffraction (ED).Thin films of SnSe were deposited by flash evaporation of SnSe fine powder prepared from high purity Sn and Se, onto glass, mica and KCl substrates in a vacuum of 2Ø micro Torr. A 15% HF + 2Ø% HNO3 solution was used to detach SnSe film from the glass and mica substrates whereas the film deposited on KCl substrate was floated over an ethanol water mixture by dissolution of KCl. The floating films were picked up on the grids for their EM analysis.


2005 ◽  
Vol 892 ◽  
Author(s):  
Jung Han ◽  
K Kim ◽  
Jie Su ◽  
Maria Gherasimova ◽  
Arto Nurmikko ◽  
...  
Keyword(s):  

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