High-performance electrochromic WO3 film driven by controllable crystalline structure and its all-solid-state device

AbstractCritical to the effectiveness of any solid state device is the reactivity of its components. In solid state ionics one desires certain atoms or ions to show high ionic mobility; yet, at the same time one does not want these atoms or ions to participate in side reactions. These reactions are a function of the crystalline structure of the material, of the way in which it was synthesized and of it's thermodynamic stability relative to the environment. This paper describes the synthesis of a variety of tungsten oxides which exhibit ionic mobility, and the determination of their crystalline structure and reactivity. The reactivity of the 123 superconductor with tungsten oxides is described in terms of the phases formed; none of these phases exhibited superconductivity. Both of these structurally related materials react with lithium and oxygen in a reversible manner, and these reactions are critically important in determining their properties and potential commercial application.

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Carrier Concentrations and Drift Currents in the Depletion Region of a p–n Junction

Surface Review and Letters ◽

10.1142/s0218625x03005360 ◽

2003 ◽

Vol 10 (04) ◽

pp. 649-660

Author(s):

D. K. Mak

Keyword(s):

Solid State ◽

Applied Voltage ◽

Local Minimum ◽

Local Maximum ◽

Depletion Region ◽

Electron Drift ◽

Electron Carrier ◽

Quantitative Explanation ◽

State Device ◽

Solid State Device

It has always been stated in electronics, semiconductor and solid state device textbooks that the hole drift and electron drift currents in the depletion region of a p–n junction are constant and independent of applied voltage (biasing). However, the explanations given are qualitative and unclear. We extrapolate the existing analytic theory of a p–n junction to give a quantitative explanation of why the currents are constant. We have also shown that the carrier concentrations in the depletion region, as depicted in some of the textbooks, are incorrect, and need to be revised. Our calculations further demonstrate that in reverse biasing, both hole and electron carrier concentrations each experience a local maximum and a local minimum, indicating that their diffusion currents change directions twice within the depletion region.

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"All-in-one" solid-state device based on a light-addressable potentiometric sensor platform

The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. ◽

10.1109/sensor.2005.1497461 ◽

2005 ◽

Author(s):

T. Wagner ◽

T. Yoshinobu ◽

R. Otto ◽

M.J. Schoning

Keyword(s):

Solid State ◽

Potentiometric Sensor ◽

Sensor Platform ◽

State Device ◽

Solid State Device ◽

Light Addressable Potentiometric Sensor

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A Solid State Pyranometer

Annals of West University of Timisoara - Physics ◽

10.1515/awutp-2015-0207 ◽

2015 ◽

Vol 58 (1) ◽

pp. 56-63

Author(s):

Anca Laura Dumitrescu ◽

Marius Paulescu ◽

Aurel Ercuta

Keyword(s):

Solid State ◽

Voltage Drop ◽

External Surface ◽

Incident Radiation ◽

Transfer Coefficients ◽

Heat Transfer Coefficients ◽

Analog Electronics ◽

Two Bodies ◽

State Device ◽

Solid State Device

Abstract The construction of a solid state device-based pyranometer designated to broadband irradiance measurements is presented in this paper. The device is built on the physical basis that the temperature difference between two bodies of identical shape and external surface area, identically exposed to the incident radiation, but having different absorption and heat transfer coefficients (e.g. one body is painted white and the other is painted black), is proportional to the incident irradiance. This proportionality may be put in evidence if the two bodies consisting of identical arrays of correspondingly painted semiconductor diodes, due to the thermal behaviour of their p-n junction. It is theoretically predicted and experimentally confirmed that the voltage drop across a diode passed through a constant forward current linearly decreases with the temperature of the junction. In other words, a signal proportional to the irradiance of the light source may be obtained via conventional analog electronics. The calibration of the apparatus, as performed by means of a professional device (LP PYRA 03), indicates a good linearity.

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