Influence of annealing in H atmosphere on the electrical properties of Al 2 O 3 layers grown on p -type Si by the atomic layer deposition technique
2002 ◽
Vol 92
(11)
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pp. 6739-6742
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2017 ◽
Vol 691
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pp. 873-879
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2019 ◽
Vol 7
(19)
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pp. 5772-5781
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2015 ◽
Vol 177
◽
pp. 168-173
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