Effect of the switching layer on CBRAM reliability and benchmarking against OxRAM devices

2021 ◽  
pp. 108058
Author(s):  
A. Belmonte ◽  
G. Reale ◽  
A. Fantini ◽  
J. Radhakrishnan ◽  
A. Redolfi ◽  
...  
Keyword(s):  
Switching Layer

A policy-aware switching layer for data centers

2008 ◽  
Vol 38 (4) ◽  
pp. 51-62 ◽  
Author(s):  
Dilip A. Joseph ◽  
Arsalan Tavakoli ◽  
Ion Stoica
Keyword(s):  
Data Centers ◽  
Switching Layer

In situ switching layer-by-layer assembly: one-pot rapid layer assembly via alternation of reductive and oxidative electropolymerization

2013 ◽  
Vol 49 (61) ◽  
pp. 6879 ◽  
Author(s):  
Mao Li ◽  
Jian Zhang ◽  
Hai-Jing Nie ◽  
Meiyong Liao ◽  
Liwen Sang ◽  
...  
Keyword(s):  
Layer By Layer ◽  
One Pot ◽  
Layer By Layer Assembly ◽  
Layer Assembly ◽  
Switching Layer

Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer

2011 ◽  
Vol 56 (1) ◽  
pp. 168-174 ◽  
Author(s):  
Ch. Muller ◽  
D. Deleruyelle ◽  
R. Müller ◽  
M. Thomas ◽  
A. Demolliens ◽  
...  
Keyword(s):  
Resistance Change ◽  
Switching Layer ◽  
Memory Structures

scholarly journals Research on Improving the Working Current of NbOx-Based Selector by Inserting a Ti Layer

2021 ◽  
Vol 8 ◽  
Author(s):  
Chunlei Liu ◽  
Guokun Ma ◽  
Junpeng Zeng ◽  
Qiuyang Tan ◽  
Ziqi Zhang ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Excellent Performance ◽  
Storage Density ◽  
Resistance Random Access Memory ◽  
The One ◽  
State Resistance ◽  
Switching Layer ◽  
Excellent Stability

To achieve the highest possible integration storage density in the V-point structure, the working current of the selector in the one-selection one-resistance (1S1R) structure should match with the resistance random access memory (RRAM). In this study, a selector device is designed with a Ti/NbOx/Ti/Pt structure through the magnetron sputtering method and achieves excellent performance of threshold switching under ultra-large compliance current (CC) up to 100 mA. Furthermore, both the switching voltages and the OFF-state resistance of the device demonstrate excellent stability even when CC is increased to a milliampere level, attributed from the existence of metallic NbO in the switching layer. This study provides evidence that a Ti/NbOx/Ti/Pt device has a great potential to drive RRAM in the V-point structure.

Message Switching Layer

2003 ◽  
pp. 43-81 ◽  
Author(s):  
José Duato ◽  
Sudhakar Yalamanchili ◽  
Lionel Ni
Keyword(s):  
Switching Layer

Memristive Device Characteristics Engineering by Controlling the Crystallinity of Switching Layer Materials

2020 ◽  
Vol 2 (6) ◽  
pp. 1529-1537 ◽  
Author(s):  
Hao Yang ◽  
Buyun Chen ◽  
Boxiang Song ◽  
Deming Meng ◽  
Subodh Tiwari ◽  
...  
Keyword(s):  
Memristive Device ◽  
Switching Layer

Fructose film tested as a natural, nonvolatile resistive switching layer

Scilight ◽  
2021 ◽  
Vol 2021 (43) ◽  
pp. 431103
Author(s):  
Leigh Ann Green
Keyword(s):  
Resistive Switching ◽  
Switching Layer

DESIGN OF SEAMLESS PROTOCOL SWITCHING LAYER FOR VOICE OVER INTERNET PROTOCOL (VOIP) THAT SWITCHES BETWEEN BLUETOOTH AND IEEE 802.11

2005 ◽  
Vol 15 (02) ◽  
pp. 271-278
Author(s):  
YUNG HAN TAN ◽  
ARUN KRISHNAN THAMPI ◽  
DALEY JOSEPH SEBASTIAN ◽  
YAJUN HA
Keyword(s):  
Operating System ◽  
Ieee 802.11 ◽  
Communication Protocols ◽  
Internet Protocol ◽  
Signal Strength ◽  
Battery Life ◽  
Voice Over Internet Protocol ◽  
Communication Devices ◽  
Protocol Switching ◽  
Switching Layer

The capability of seamlessly switching between two communication protocols will be very important for communication devices of the future, since it allows the end users to judiciously use whichever network is appropriate, depending on cost, signal strength or other factors such as the amount of battery life left on the device. This paper presents the groundbreaking idea of a Seamless Protocol Switching Layer (SPSL) on a hardware and software level to solve this problem. In addition, the SPSL concept is implemented by developing a prototype application, a Smart Video Phone, built using Intel XScale-based PXA255 board and ARM Linux as the operating system that can seamlessly switch between IEEE 802.11 and Bluetooth technologies. Experiments show that if the signal of the Bluetooth signal goes below 40%, the switching to Wireless-Fidelity (Wi-Fi) happens if it is available.

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