Research on Improving the Working Current of NbOx-Based Selector by Inserting a Ti Layer

To achieve the highest possible integration storage density in the V-point structure, the working current of the selector in the one-selection one-resistance (1S1R) structure should match with the resistance random access memory (RRAM). In this study, a selector device is designed with a Ti/NbOx/Ti/Pt structure through the magnetron sputtering method and achieves excellent performance of threshold switching under ultra-large compliance current (CC) up to 100 mA. Furthermore, both the switching voltages and the OFF-state resistance of the device demonstrate excellent stability even when CC is increased to a milliampere level, attributed from the existence of metallic NbO in the switching layer. This study provides evidence that a Ti/NbOx/Ti/Pt device has a great potential to drive RRAM in the V-point structure.

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Forming-free Resistance Random Access Memory Using Ta2O5/TaOx Bi-layer Prepared by Magnetron Sputtering Method

MRS Proceedings ◽

10.1557/opl.2012.1021 ◽

2012 ◽

Vol 1430 ◽

Author(s):

Natsuki Fukuda ◽

Kazunori Fukuju ◽

Isamu Yogosawa ◽

Kazumasa Horita ◽

Shin Kikuchi ◽

...

Keyword(s):

Mass Production ◽

Oxygen Vacancies ◽

Random Access ◽

Random Access Memory ◽

Access Memory ◽

Resistance Change ◽

Resistance Random Access Memory ◽

Good Uniformity ◽

Switching Characteristics ◽

Excellent Stability

ABSTRACTThis paper describes proposal of ReRAM switching mechanism, development of production tool for ReRAM sputtering and improvement in TaOx-ReRAM switching characteristics. We propose that a ReRAM-cell has stack a structure in which an oxygen vacancy supply layer (TaOx) and an oxygen accumulation layer (Ta2O5) sandwiched by the top and bottom electrodes. Resistance change of the ReRAM-cell is caused by the oxygen vacancies migrating between the TaOx and the Ta2O5 layers by applied voltage. This prediction corresponded to the experimental facts. The thickness of Ta2O5 film sputtered by a mass production tool had good uniformity (±1.0%) and excellent stability (±1.0%). Also the sheet resistance uniformity (1σ) of TaOx film had 3.6%. By examining the sputtering conditions, the ReRAM-cell having a Ta2O5/TaOx bi-layer operated in less than 100μA with a forming-free and had excellent endurance property to 1010 cycles at 50nsec.

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Retraction notice to “Improvement Mechanism of resistance random access memory with supercritical CO2 fluid treatment” [J. Supercrit. Fluids, Volume 85, January 2014, Pages 183–189]

The Journal of Supercritical Fluids ◽

10.1016/j.supflu.2021.105350 ◽

2021 ◽

Vol 178 ◽

pp. 105350

Author(s):

Kuan-Chang Chang ◽

Jung-Hui Chen ◽

Tsung-Ming Tsai ◽

Ting-Chang Chang ◽

Syuan-Yong Huang ◽

...

Keyword(s):

Supercritical Co2 ◽

Random Access ◽

Random Access Memory ◽

Access Memory ◽

Mechanism Of Resistance ◽

Resistance Random Access Memory ◽

Supercritical Co2 Fluid ◽

Retraction Notice

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Effects of Thickness on Resistance Switching Properties of ZnMn2O4 Films Deposited by Magnetron Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.941-944.1275 ◽

2014 ◽

Vol 941-944 ◽

pp. 1275-1278

Author(s):

Hua Wang ◽

Zhi Da Li ◽

Ji Wen Xu ◽

Yu Pei Zhang ◽

Ling Yang ◽

...

Keyword(s):

Magnetron Sputtering ◽

Random Access ◽

Random Access Memory ◽

Resistance Switching ◽

Switching Behavior ◽

Si Substrate ◽

Access Memory ◽

Resistive Switching Behavior ◽

Bipolar Resistive Switching ◽

Resistance Random Access Memory

ZnMn2O4films for resistance random access memory (RRAM) were fabricated on p-Si substrate by magnetron sputtering. The effects of thickness onI-Vcharacteristics, resistance switching behavior and endurance characteristics of ZnMn2O4films were investigated. The ZnMn2O4films with a structure of Ag/ZnMn2O4/p-Si exhibit bipolar resistive switching behavior. With the increase of thickness of ZnMn2O4films from 0.83μm to 2.3μm, both theVONand the number of stable repetition switching cycle increase, but theRHRS/RLRSratio decrease, which indicated that the ZnMn2O4films with a thickness of 0.83μm has the biggestRHRS/RLRSratio and the lowestVONandVOFF, but the worst endurance characteristics.

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