Characterization of the defect density states in MoOx for c-Si solar cell applications

2021 ◽  
pp. 108135
Author(s):  
D. Scirè ◽  
R. Macaluso ◽  
M. Mosca ◽  
S. Mirabella ◽  
A. Gulino ◽  
...  
Keyword(s):  
Solar Cell ◽  
Defect Density ◽  
Si Solar Cell

Investigation and Characterization of Al paste as back surface field (BSF) for High Efficiency Si Solar cell

2021 ◽  
Author(s):  
Michael A. Awaah ◽  
Isibhakhomen Awaah ◽  
Vitus A. Apalangya ◽  
Kumar K. Das
Keyword(s):  
Solar Cell ◽  
High Efficiency ◽  
Back Surface ◽  
Back Surface Field ◽  
Si Solar Cell ◽  
Surface Field

Characterization of GaN/p-Si solar cell prepared by simple technique

Optik ◽  
2015 ◽  
Vol 126 (21) ◽  
pp. 3125-3128 ◽  
Author(s):  
Asmiet Ramizy ◽  
Issam M. Ibrahim ◽  
Maryam Th. Muhammed
Keyword(s):  
Solar Cell ◽  
Simple Technique ◽  
Si Solar Cell

Electrical characterization of a-SiC/c-Si solar cell structures

2015 ◽  
Author(s):  
Milan Perny ◽  
Vladimir Saly ◽  
Michal Vary ◽  
Miroslav Mikolasek ◽  
Jozef Huran
Keyword(s):  
Solar Cell ◽  
Electrical Characterization ◽  
Si Solar Cell ◽  
Cell Structures

INVESTIGATION OF NEAR-SURFACE DEFECTS INDUCED BY SPIKE RAPID THERMAL ANNEALING IN c-SILICON SOLAR CELLS

2016 ◽  
Vol 23 (02) ◽  
pp. 1550107
Author(s):  
GUODONG LIU ◽  
PAN REN ◽  
DAYONG ZHANG ◽  
WEIPING WANG ◽  
JIANFENG LI
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Surface Defects ◽  
Crystalline Silicon ◽  
Defect Density ◽  
Near Surface ◽  
Si Solar Cell ◽  
Dislocation Defects

The defects induced by a spike rapid thermal annealing (RTA) process in crystalline silicon (c-Si) solar cells were investigated by the photoluminescence (PL) technique and the transmission electron microscopy (TEM), respectively. Dislocation defects were found to form in the near-surface junction region of the monocrystalline Si solar cell after a spike RTA process was performed at 1100[Formula: see text]C. Photo J–V characteristics were measured on the Si solar cell before and after the spike RTA treatments to reveal the effects of defects on the Si cell performances. In addition, the Silvaco device simulation program was used to study the effects of defects density on the cell performances by fitting the experimental data of RTA-treated cells. The results demonstrate that there was an obvious degradation in the Si solar cell performances when the defect density after the spike RTA treatment was above [Formula: see text][Formula: see text]cm[Formula: see text].

scholarly journals Synthesis and characterization of (Pani/n-si)solar cell

2011 ◽  
Vol 6 ◽  
pp. 85-91 ◽  
Author(s):  
K.M. Zaidan ◽  
H.F. Hussein ◽  
R.A. Talib ◽  
A.K. Hassan
Keyword(s):  
Solar Cell ◽  
Synthesis And Characterization ◽  
Si Solar Cell
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