Room temperature asymmetric negative differential resistance characteristics of AlGaN/GaN resonant tunneling diodes grown by metal-organic chemical vapor deposition

2021 ◽  
pp. 108195
Author(s):  
Wen-Lu Yang ◽  
Lin-An Yang ◽  
Xiao-Yu Zhang ◽  
Yang Li ◽  
Xiao-Hua Ma ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Negative Differential Resistance ◽  
Resonant Tunneling ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Differential Resistance ◽  
Organic Chemical ◽  
Tunneling Diodes ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Room temperature single nanowire ZnTe photoconductors grown by metal-organic chemical vapor deposition

2010 ◽  
Vol 97 (6) ◽  
pp. 063510 ◽  
Author(s):  
Zhong Li ◽  
Joseph Salfi ◽  
Christina De Souza ◽  
Ping Sun ◽  
Selvakumar V. Nair ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Single Nanowire ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Emission at 247 nm from GaN Quantum Wells Grown by MOCVD

1999 ◽  
Vol 595 ◽  
Author(s):  
Takao Someya ◽  
Katsuyuki Hoshino ◽  
Janet C. Harris ◽  
Koichi Tachibana ◽  
Satoshi Kako ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Pl Spectra ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractPhotoluminescence (PL) spectra were measured at room temperature for GaN quantum wells (QWs) with Al0.8Ga0.2N barriers, which were grown by atmospheric-pressure metal organic chemical vapor deposition (MOCVD). The thickness of the GaN QW layers was systematically varied from one monolayer to four monolayers. We clearly observed a PL peak at a wavelength as short as 247 nm (5.03 eV) from one monolayer-thick QWs. The effective confinement energy is as large as 1.63 eV.

Structure and Physical Properties of Bi4Ti3O12Thin Films Prepared by APMOCVD and RTA

1997 ◽  
Vol 493 ◽  
Author(s):  
H. Wang ◽  
Z. Wang ◽  
S. X. Shang ◽  
M. Wang
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Planar Silicon ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTFerroelectric Bi4Ti3O12 thin films were grown by atmospheric pressure metal-organic chemical vapor deposition. After rapid thermal annealing (RTA), the films have a (001) preferred orientation, The I-V and C-V characteristics were studied, the resistivity were in the rang of 1010∼1013 ω. cm, at room temperature. The memory window is about 3V. These results snow that The Bi4Ti3O12 films prepared at present work are suitable for making ferroelectric FEFETs memories. By using planar silicon processing, the FEFET devices have been fabricated, which shows clearly memory effect under a applied ±5V gate voltage.

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