Si nanoparticle formation in SiO2 by Si ion implantation: Effect of energy and fluence on size distribution and on SiO2 composition

2009 ◽  
Vol 203 (17-18) ◽  
pp. 2501-2505 ◽  
Author(s):  
L. Nikolova ◽  
R.G. Saint-Jacques ◽  
C. Dahmoune ◽  
G.G. Ross
Keyword(s):  
Ion Implantation ◽  
Size Distribution ◽  
Nanoparticle Formation ◽  
Si Nanoparticle ◽  
Si Ion Implantation

Manipulation of Nucleation Sites in Solid-State Crystallization of Amorphous Si Films

1990 ◽  
Vol 202 ◽  
Author(s):  
Hideya Kumomi ◽  
Takao Yonehara
Keyword(s):  
Solid State ◽  
Ion Implantation ◽  
Size Distribution ◽  
Narrow Size Distribution ◽  
Amorphous Films ◽  
Nucleation Sites ◽  
Preferential Nucleation ◽  
Amorphous Si ◽  
Si Films ◽  
Si Ion Implantation

ABSTRACTNucleation sites are manipulated in amorphous Si films to control grain location and the size distribution during the solid-state crystallization. The principle of the method is theoretically investigated. Nucleation is suppressed and the sites are periodically formed in the plane of amorphous films by 2-step Si ion implantation. Thermal annealing causes preferential nucleation of single nuclei at the artificial sites and they grow laterally in the film. Consequently, 3 μm large grains were arranged in a matrix with a narrow size distribution.

Low-dose Si ion implantation into semi-insulating LEC GaAs

1981 ◽  
Vol 17 (21) ◽  
pp. 817 ◽  
Author(s):  
H. Yamazaki ◽  
T. Honda ◽  
S. Miyazawa
Keyword(s):  
Ion Implantation ◽  
Low Dose ◽  
Lec Gaas ◽  
Si Ion Implantation

scholarly journals Negative-ion implantation into thin SiO2 layer for defined nanoparticle formation

2006 ◽  
Vol 77 (3) ◽  
pp. 03A510 ◽  
Author(s):  
Hiroshi Tsuji ◽  
Nobutoshi Arai ◽  
Naoyuki Gotoh ◽  
Takashi Minotani ◽  
Toyoji Ishibashi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Sio2 Layer ◽  
Negative Ion ◽  
Nanoparticle Formation

Highly uniform E/D MESFETs by Si ion-implantation and methane/hydrogen plasma gate recessing

1991 ◽  
Vol 6 (9) ◽  
pp. 912-915 ◽  
Author(s):  
G Zou ◽  
R Pereira ◽  
M de Potter ◽  
M Van Hove ◽  
W De Raedt ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Hydrogen Plasma ◽  
Highly Uniform ◽  
Si Ion Implantation

Generation of Defects and Strain by Ion Implantation in Ge (100) Single Crystals, and in Pseudomorphic GexSi1-x Films Grown on Si (100)

1992 ◽  
Vol 262 ◽  
Author(s):  
D. Y. C. Lie ◽  
A. Vantomme ◽  
F. Eisen ◽  
M. -A. Nicolet ◽  
V. Arbet-Engels ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Room Temperature ◽  
Defect Concentration ◽  
Double Crystal ◽  
X Ray ◽  
Positive Strain ◽  
Independent Coefficient ◽  
The Relationship ◽  
Si Ion Implantation

ABSTRACTWe have studied the damage and strain produced in Ge (100) single crystals by implantation of various doses of 300 keV 28Si ions at room temperature. The analyzing tools were x-ray double-crystal diffractometry, and MeV 4He channeling spectrometry. The damage induced by implantation produces positive strain in Ge (100). The maximum perpendicular strain and maximum defect concentration rise nonlinearly with increasing dose. These quantities are linearly related with a dose-independent coefficient of ∼ 0.013 for Ge (100) single crystals implanted at room temperature. The results are compared with those available for Si (100) self-implantation. We have also monitored the strain and defects generated in pseudomorphic Ge0.1Si0.9/Si (100) films induced by room temperature 28Si ion implantation. It is found that the relationship between the strain and defect concentration induced by ion implantation is no longer a simple linear one.

Current Aperture Vertical $\beta$ -Ga2O3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping

2019 ◽  
Vol 40 (3) ◽  
pp. 431-434 ◽  
Author(s):  
Man Hoi Wong ◽  
Ken Goto ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
Masataka Higashiwaki
Keyword(s):  
Ion Implantation ◽  
Si Ion Implantation
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