Manipulation of Nucleation Sites in Solid-State Crystallization of Amorphous Si Films

1990 ◽  
Vol 202 ◽  
Author(s):  
Hideya Kumomi ◽  
Takao Yonehara
Keyword(s):  
Solid State ◽  
Ion Implantation ◽  
Size Distribution ◽  
Narrow Size Distribution ◽  
Amorphous Films ◽  
Nucleation Sites ◽  
Preferential Nucleation ◽  
Amorphous Si ◽  
Si Films ◽  
Si Ion Implantation

ABSTRACTNucleation sites are manipulated in amorphous Si films to control grain location and the size distribution during the solid-state crystallization. The principle of the method is theoretically investigated. Nucleation is suppressed and the sites are periodically formed in the plane of amorphous films by 2-step Si ion implantation. Thermal annealing causes preferential nucleation of single nuclei at the artificial sites and they grow laterally in the film. Consequently, 3 μm large grains were arranged in a matrix with a narrow size distribution.

Crystallization of amorphous Si on a glass substrate through nucleation by Si+ion implantation

1990 ◽  
Vol 57 (19) ◽  
pp. 1970-1972 ◽  
Author(s):  
Tomonori Yamaoka ◽  
Keiji Oyoshi ◽  
Takashi Tagami ◽  
Yasunori Arima ◽  
Ken Yamashita ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Glass Substrate ◽  
Amorphous Si ◽  
Si Ion Implantation

Effect of the Crystallographic Orientation of Underlying Poly-Si on the Thermal Stability of the TiSi2 Film

1992 ◽  
Vol 280 ◽  
Author(s):  
Y. W. Kim ◽  
I. K. Kim ◽  
N. I. Lee ◽  
J. W. Ko ◽  
S. T. Ahn ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Solid State ◽  
Surface Energy ◽  
Microstructural Evolution ◽  
Solid State Reaction ◽  
Crystallographic Orientation ◽  
Amorphous Si ◽  
Si Films ◽  
Thermal Stability Of

ABSTRACTThe effect of the crystallographic orientation of underlying poly-Si film on the thermal stability of the TiSi2 film was studied. Different preferred orientations of the poly-Si film were obtained by annealing poly-Si or amorphous Si films at various temperatures. The TiSi2 film was formed by the solid-state reaction of the Ti film sputtered on the poly-Si film. The thermal stability of the TiSi2 film was evaluated by changes in the sheet resistance and microstructural evolution during furnace anneals. The TiSi2 film on poly-Si with the <110> preferred orientation shows more stable conductivity during high temperature anneals than with the <111> orientation. The surface energy of underlying poly-Si is expected to influence the thermal stability of the TiSi2/poly-Si structure significantly. Better thermal stability of the TiSi2 film can be obtained by the higher surface energy of underlying poly-Si.

Crystal Nucleation in Amorphous Si Films on Glass Substrate by Si+ Ion Implantation

1991 ◽  
Vol 230 ◽  
Author(s):  
Tomonori Yamaoka ◽  
Keiji Oyoshi ◽  
Takashi Tagami ◽  
Yasunori Arima ◽  
Shuhei Tanaka
Keyword(s):  
Ion Implantation ◽  
Glass Substrate ◽  
Ion Beam ◽  
Crystal Nucleation ◽  
Projected Range ◽  
Transmission Electron ◽  
Microscopy Investigation ◽  
Amorphous Si ◽  
Si Films ◽  
Almost All

AbstractCrystallization of amorphous Si films on a glass substrate using Si+ ion implantation is investigated. 100keV and 180keV Si+ ion implantations into 600nm-thick amorphous Si layers crystallize half and almost all of the film thicknesses, respectively. This result demonstrates that crystallization by ion implantation, which contains both crystal nucleation and grain growth, is due to ion-solid interaction, and not to “pure” thermal effect by ion beam heating. Furthermore, two distinct regions are observed in transmission electron microscopy investigation of grain size at different depths of crystallized Si/SiO2 multi-layer specimens. The deep region below the projected range is composed of grains smaller than in the shallow region. This result is strongly related with crystal nucleation and growth kinetics by ion implantation.

Grain‐size distribution in ion‐irradiated amorphous Si films on glass substrates

1992 ◽  
Vol 71 (2) ◽  
pp. 648-652 ◽  
Author(s):  
Keiji Oyoshi ◽  
Tomonori Yamaoka ◽  
Takashi Tagami ◽  
Yasunori Arima ◽  
Shuhei Tanaka
Keyword(s):  
Grain Size ◽  
Size Distribution ◽  
Grain Size Distribution ◽  
Glass Substrates ◽  
Amorphous Si ◽  
Si Films

Lateral Solid Phase Epitaxy of Evaporated Amorphous Si Films onto SiO2 Patterns

1983 ◽  
Vol 25 ◽  
Author(s):  
H. Yamamoto ◽  
H. Ishiwara ◽  
S. Furukawa ◽  
M. Tamura ◽  
T. Tokuyama
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Si Films ◽  
Kinetics Of

ABSTRACTLateral solid phase epitaxy (L-SPE) of amorphous Si (a-Si) films vacuum-evaporated on Si substrates with SiO2 patterns has been investigated, in which the film first grows vertically in the regions directly contacted to the Si substrates and then grows laterally onto SiO2 patterns. It has been found from transmission electron microscopy and Nomarski optical microscopy that use of dense a-Si films, which are formed by evaporation on heated substrates and subsequent amorphization by Si+ ion implantation, is essentially important for L-SPE. The maximum L-SPE length of 5–6μm was obtained along the <010> direction after 10hourannealing at 600°C. The kinetics of the L-SPE growth has also been investigated.

Crystal forms by solid‐state recrystallization of amorphous Si films on SiO2

1991 ◽  
Vol 59 (6) ◽  
pp. 653-655 ◽  
Author(s):  
T. Noma ◽  
T. Yonehara ◽  
H. Kumomi
Keyword(s):  
Solid State ◽  
Crystal Forms ◽  
Amorphous Si ◽  
Si Films ◽  
Solid State Recrystallization

The Impact of Pre-Silicidation Heat Treatment and Dopant Effects on the Thermal Stability of Cosi2 Polycide During Rapid Thermal Annealing

1993 ◽  
Vol 303 ◽  
Author(s):  
W. Chen ◽  
J. Lin ◽  
S. Banerjee ◽  
J. Lee
Keyword(s):  
Heat Treatment ◽  
Thermal Stability ◽  
Ion Implantation ◽  
Grain Boundaries ◽  
Grain Growth ◽  
Silicon Substrate ◽  
Amorphous Si ◽  
Si Films ◽  
The Impact ◽  
Thermal Stability Of

ABSTRACTThe effects of heat treatment of polysilicon and amorphous Si films on their microstructure and thermal stability of polycides formed on these films have been studied. The number of grain boundaries decreases after pre-silicidation heat treatment in polysilicon due to grain growth but increases in amorphous Si due to nucleation. Since the thermal stability of CoSi2 polycide films was found to be closely related to the number of grain boundaries in the underlying silicon substrate, pre-silicidation heat treatments degrade the thermal stability of CoSi2 on as-deposited amorphous Si and improve the thermal stability of CoSi2 on asdeposited polysilicon. Doping does not have as pronounced an effects as substrate microstructure on CoSi21 polycide thermal stability, especially when dopants are introduced after silicidation by ion implantation.

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