The thermoelectric properties of zinc antimonide thin films fabricated through single element composite target

2019 ◽  
Vol 361 ◽  
pp. 130-135 ◽  
Author(s):  
Peng-juan Liu ◽  
Ai-hua Zhong ◽  
Mei-mei Yin ◽  
Zhuang-hao Zheng ◽  
Ping Fan
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Single Element ◽  
Composite Target ◽  
Zinc Antimonide

Enhanced thermoelectric properties of mixed zinc antimonide thin films via phase optimization

2014 ◽  
Vol 292 ◽  
pp. 823-827 ◽  
Author(s):  
Zhuang-hao Zheng ◽  
Ping Fan ◽  
Peng-juan Liu ◽  
Jing-ting Luo ◽  
Xing-min Cai ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Zinc Antimonide ◽  
Phase Optimization

The influence of the transformation of electronic structure and micro-structure on improving the thermoelectric properties of zinc antimonide thin films

2015 ◽  
Vol 64 ◽  
pp. 18-22 ◽  
Author(s):  
Zhuang-hao Zheng ◽  
Ping Fan ◽  
Jing-ting Luo ◽  
Peng-juan Liu ◽  
Xing-min Cai ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Thermoelectric Properties ◽  
Micro Structure ◽  
Zinc Antimonide

A standard for transmission electron spectroscopy

1978 ◽  
Vol 36 (1) ◽  
pp. 530-531 ◽  
Author(s):  
Dennis Maher ◽  
David Joy ◽  
Peggy Mochel
Keyword(s):  
Thin Films ◽  
Electron Spectroscopy ◽  
Host Lattice ◽  
Single Element ◽  
Multicomponent Systems ◽  
Transmission Electron ◽  
Major Interest ◽  
Standard Specimens ◽  
Forms Of Carbon ◽  
Electron Energy Loss

A variety of standard specimens is needed in order to systematically investigate the instrumentation, specimen, data reduction and quantitation variables in electron energy-loss spectroscopy (EELS). Pure single element specimens (e.g. various forms of carbon) have received considerable attention to date but certain elements of interest cannot be prepared directly as thin films. Since studies of the first and second row elements in two- or multicomponent systems will be of considerable importance in microanalysis using EELS, there is a need for convenient standards containing these species. For many investigations a standard should contain the desired element, or elements, homogeneously dispersed through a suitable matrix and at an accurately known concentration. These conditions may be met by the technique of implantation.Silicon was chosen as the host lattice since its principal ionization energies, EL23 = 98 eV and Ek = 1843 eV, are well removed from the K-edges of most elements of major interest such as boron (Ek = 188 eV), carbon (Ek = 283 eV), nitrogen (Ek = 400 eV) and oxygen (Ek = 532 eV).

scholarly journals Giant Tuning of Electronic and Thermoelectric Properties by Epitaxial Strain in p-Type Sr-Doped LaCrO3 Transparent Thin Films

2021 ◽  
Author(s):  
Dong Han ◽  
Rahma Moalla ◽  
Ignasi Fina ◽  
Valentina M. Giordano ◽  
Marc d’Esperonnat ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Epitaxial Strain ◽  
P Type

scholarly journals High Power Impulse Magnetron Sputtering of In2O3/Sn Cold Sprayed Composite Target

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1228
Author(s):  
Marcin Winnicki ◽  
Artur Wiatrowski ◽  
Michał Mazur
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Voltage ◽  
High Power ◽  
Power Supply ◽  
Indium Tin Oxide ◽  
Volume Ratio ◽  
Cold Spraying ◽  
High Voltage Power Supply ◽  
Composite Target

High Power Impulse Magnetron Sputtering (HiPIMS) was used for deposition of indium tin oxide (ITO) transparent thin films at low substrate temperature. A hybrid-type composite target was self-prepared by low-pressure cold spraying process. Prior to spraying In2O3 and oxidized Sn powders were mixed in a volume ratio of 3:1. Composite In2O3/Sn coating had a mean thickness of 900 µm. HiPIMS process was performed in various mixtures of Ar:O2: (i) 100:0 vol.%, (ii) 90:10 vol.%, (iii) 75:25 vol.%, (iv) 50:50 vol.%, and (v) 0:100 vol.%. Oxygen rich atmosphere was necessary to oxidize tin atoms. Self-design, simple high voltage power switch capable of charging the 20 µF capacitor bank from external high voltage power supply worked as a power supply for an unbalanced magnetron source. ITO thin films with thickness in the range of 30–40 nm were obtained after 300 deposition pulses of 900 V and deposition time of 900 s. The highest transmission of 88% at λ = 550 nm provided 0:100 vol. % Ar:O2 mixture, together with the lowest resistivity of 0.03 Ω·cm.

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