A standard for transmission electron spectroscopy

1978 ◽  
Vol 36 (1) ◽  
pp. 530-531 ◽  
Author(s):  
Dennis Maher ◽  
David Joy ◽  
Peggy Mochel
Keyword(s):  
Thin Films ◽  
Electron Spectroscopy ◽  
Host Lattice ◽  
Single Element ◽  
Multicomponent Systems ◽  
Transmission Electron ◽  
Major Interest ◽  
Standard Specimens ◽  
Forms Of Carbon ◽  
Electron Energy Loss

A variety of standard specimens is needed in order to systematically investigate the instrumentation, specimen, data reduction and quantitation variables in electron energy-loss spectroscopy (EELS). Pure single element specimens (e.g. various forms of carbon) have received considerable attention to date but certain elements of interest cannot be prepared directly as thin films. Since studies of the first and second row elements in two- or multicomponent systems will be of considerable importance in microanalysis using EELS, there is a need for convenient standards containing these species. For many investigations a standard should contain the desired element, or elements, homogeneously dispersed through a suitable matrix and at an accurately known concentration. These conditions may be met by the technique of implantation.Silicon was chosen as the host lattice since its principal ionization energies, EL23 = 98 eV and Ek = 1843 eV, are well removed from the K-edges of most elements of major interest such as boron (Ek = 188 eV), carbon (Ek = 283 eV), nitrogen (Ek = 400 eV) and oxygen (Ek = 532 eV).

Quantification in Elemental DIstributions of Light Atoms by EEL Image Analysis in Biological Sections

1982 ◽  
Vol 40 ◽  
pp. 420-423
Author(s):  
F. P. Ottensmeyer
Keyword(s):  
Elemental Content ◽  
Single Element ◽  
X Ray ◽  
Transmission Electron ◽  
Spectral Evaluation ◽  
Scanning Transmission ◽  
Spectrum Characteristic ◽  
Electron Microscopes ◽  
Electron Energy Loss ◽  
Magnetic Electron

Microanalysis by electron energy loss spectroscopy has gained momentum in the last few years with the utilization of more and more magnetic electron spectrometers coupled to dedicated or hybrid scanning transmission electron microscopes. Two approaches to analysis are the spectral evaluation of a single spot and the mapping of a single element over the entire image. In the first method, as in x-ray microanalysis, a finely focused electron beam is placed on a small area of the specimen. The impinging electrons traversing this spot subsequently provide a spectrum characteristic of the elemental content of the area.

Buttons and Threads—Tailoring Defect Analysis

2006 ◽  
Author(s):  
Carolyn F. H. Gondran ◽  
Dennis F. Paul ◽  
Sanjit K. Das ◽  
Brendan J. Foran ◽  
Mark H. Clark
Keyword(s):  
Electron Spectroscopy ◽  
Scanning Transmission Electron Microscopy ◽  
Auger Electron ◽  
Defect Analysis ◽  
Transmission Electron ◽  
Analysis Technique ◽  
Small Defect ◽  
Scanning Transmission ◽  
Auger Microscopy ◽  
Electron Energy Loss

Abstract A framework is presented for considering the relative strengths of Auger electron spectroscopy (AES)/scanning Auger microscopy (SAM) and scanning transmission electron microscopy–electron energy loss spectroscopy (STEM-EELS) when selecting a defect analysis technique. The geometry of the analysis volumes for each technique is visualized. The analysis volume for AES/SAM is shaped like a button while the STEM-EELS analysis volume is more like a thread extending throughout the thickness of the prepared sample. The usefulness of this framework is illustrated with the example of small defect particles. In this example the size and shape of the AES/SAM analysis volume is a better fit to the defect, thus it provides better chemical analysis while STEM provides better images of the defects.

Structure of composition-modulated Cu/Ni thin films prepared by electrodeposition

1989 ◽  
Vol 4 (4) ◽  
pp. 755-758 ◽  
Author(s):  
J. Yahalom ◽  
D. F. Tessier ◽  
R. S. Timsit ◽  
A. M. Rosenfeld ◽  
D. F. Mitchell ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Film Structure ◽  
Composition Modulation ◽  
Transmission Electron ◽  
Electron Energy Loss ◽  
Multilayered Thin Films

Copper/nickel multilayered thin-films prepared by electrodeposition have been examined in cross section by electron energy loss spectroscopy and high-resolution transmission electron microscopy. The results of the examinations provide the first direct experimental evidence of the large composition modulation across successive layers in the thin-film structure and the coherent nature of Cu/Ni interfaces.

Synthesis and Selected Micro-Mechanical Properties of Titanium Nitride Thin Films by the Pyrolysis of Tetrakis Titanium in Ammonia.

1994 ◽  
Vol 363 ◽  
Author(s):  
Y. W. Bae ◽  
W. Y. Lee ◽  
T. M. Besmann ◽  
P. J. Blau ◽  
L. Riester
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Electron Spectroscopy ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Chemical Vapor Deposited

AbstractThin films of titanium nitride were chemical vapor deposited on (100)-oriented single-crystal silicon substrates from tetrakis (dimethylamino) titanium, Ti((CH3)2N)4, and ammonia gas mixtures in a cold-wall reactor at 623 K and 655 Pa. The films were characterized by Auger electron spectroscopy, X-ray diffraction, and transmission electron spectroscopy. The nano-scale hardness of the film, measured by nanoindentation, was 12.7±0.6 GPa. The average kinetic friction coefficient against unlubricated, type- 440C stainless steel was determined using a computer-controlled friction microprobe to be ∼0.43.

Nonorthogonal Twining in Epitaxial SrRuO3 Thin Films Grown on (001) LaAlO3

2001 ◽  
Vol 7 (S2) ◽  
pp. 332-333
Author(s):  
W. Tian ◽  
J. C. Jiang ◽  
X. Q. Pan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Rf Sputtering ◽  
Perovskite Oxides ◽  
The Other ◽  
Formation Mechanisms ◽  
Spatially Resolved ◽  
Transmission Electron ◽  
Electron Energy Loss

Nonorthogonal twinings have commonly been observed in perovskite oxides such as SrTi03 and BaTi03. Among them, the ﹛111﹜ Σ3 type twining exists with a relative large amount of population and has been extensively studied. By combining quantitative high resolution transmission electron microscopy (HRTEM) and spatially resolved electron energy loss spectroscopy (EELS), one was able to determine the atomic structure of the ﹛111﹜Σ3 twin boundary in these oxides.[l] On the other hand, nonorthogonal twinings in SrRuO3 have been much less studied. SrRu03, a ternary ruthenium metal oxide, has a perovskite-compatible structure and exhibits low electrical resistivity (10-4 Ω•cm), showing an unparallel technique importance in microelectronic applications. Since the properties of material strongly depend on the microstructure and defect configurations, it is important to study the twining structures and their formation mechanisms in SrRuO3 thin films.Transmission electron microscopy (TEM) was used to study the SrRuO3 thin films grown on (001) LaAlO3 by 90° off-axis rf sputtering.

Solid State Amorphization in the Interfacial Reactions of Yttrium Thin Films on (111)Si

1993 ◽  
Vol 311 ◽  
Author(s):  
T.T. Lee ◽  
L.L. Chen
Keyword(s):  
Thin Films ◽  
Electron Spectroscopy ◽  
Room Temperature ◽  
Amorphous Layer ◽  
Interfacial Reactions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
State Amorphization ◽  
Amorphous Interlayer

ABSTRACTInterfacial reactions of ultrahigh vacuum deposited yttrium thin films on atomically clean (111)Si at low temperatures have been studied by both conventional and high resolution transmission electron microscopy, Auger electron spectroscopy and x-ray diffraction. A 10–nm–thick yttrium thin film, deposited onto (lll)Si at room temperature, was found to completely intermix with Si to form an 11–nm–thick amorphous interlayer. Crystalline Y5Si3 and Si were observed to nucleate first within the amorphous interlayer in samples annealed at temperatures lower than 200 °C. Epitaxial YSi2−x was found to be the only phase formed at the interface of amorphous interlayer and crystalline Si in samples annealed at temperatures higher than 250 °C. In as deposited 20– to 60–nm thick Y thin films on silicon samples, crystalline Y5Si3, Si, and YSi and a 2.5–nm–thick amorphous layer were found to be present simultaneously.

Atomic Structure of La067Ca0.33MnO3 Thin Films on LaAlO3

2000 ◽  
Vol 6 (S2) ◽  
pp. 402-403
Author(s):  
H-J. Gao ◽  
C.L. Chen ◽  
X. Fan ◽  
M. Kim ◽  
S.Y. Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Structure ◽  
Perovskite Manganites ◽  
X Ray Diffraction ◽  
Transmission Microscopy ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Film Substrate ◽  
Z Contrast ◽  
Electron Energy Loss

Thin films of doped perovskite manganites of the type R1-X AxMnO3-y are currently become the focus of intense theoretical and experimental research due to their promising technological implications. However, the microstructure of the film and the interface structure at the atomic level remains unclear. In this report, we will present the atomic structure of the film/substrate interface and the microstructure of the film using a combination of transmission electron microscopy (TEM), Z-contrast scanning transmission microscopy (STEM), and electron energy loss spectroscopy (EELS).The La0.67Ca0.33MnO3 (LCMO) samples were grown on (001) LaA1O3 (LAO) using pulsed laser deposition. X-ray diffraction indicated the films to be oriented with the [001] directions parallel to the <001> directions of the pseudo-cubic perovskite LAO. Rocking curve measurements using the (002) reflection from the film indicated a full width half maximum of less than 0.3°. A Philips EM-400 electron microscope at 100 kV and a VG HB603 STEM at 300 kV were employed for sample analysis.

Low loss EELS and EFTEM study of Bi2Te3 based bulk and nanomaterials

2011 ◽  
Vol 1329 ◽  
Author(s):  
N. Peranio ◽  
Z. Aabdin ◽  
W. Töllner ◽  
M. Winkler ◽  
J. König ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam ◽  
Low Loss ◽  
Plasmon Energy ◽  
X Ray ◽  
Transmission Electron ◽  
20 Nm ◽  
Multilayered Nanowires ◽  
Elemental Maps ◽  
Electron Energy Loss

ABSTRACTEnergy-filtered transmission electron microscopy (EFTEM) yields new possibilities for the investigation of Bi2Te3 based nanomaterials. Combined low-loss electron energy-loss spectroscopy (EELS) and energy-dispersive x-ray microanalysis (EDS) and energy-filtered TEM were applied on a Zeiss 912Ω TEM to investigate nanowires, thin films, and bulk materials. Multilayered Bi-Sb-Te nanowires with a diameter of 65 nm and a period of 200 nm and stoichiometric Bi2Te3 nanowires were grown by potential-pulsed electrochemical deposition. Tellurium elemental maps of the multilayered nanowires were obtained by two-window edge-jump ratio images (EJI). EDS chemical analysis showed that small Te fluctuations of 3 at.% yielded significant contrast in EJI. Energy-filtered TEM applied on nano-alloyed Bi2Te3 thin films grown by molecular beam epitaxy (MBE) revealed 10-20 nm thick Bi-rich blocking layers at grain boundaries. Plasmon spectroscopy by EELS was applied on Bi2(Te0.91Se0.09)3 bulk and yielded a plasmon energy of 16.9 eV. Finally, plasmon dispersion was measured for Bi2(Te0.91Se0.09)3 bulk by angle-resolved EELS, which yields a fingerprint of the anisotropy and the dimensionality of the electronic structure of the materials.

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