Predicting the kinetics of the dissociative adsorption of homonuclear molecules on metal surfaces in gas phase and solution II. Numerical calculations of the molecular oxygen dissociative adsorption on the Pd(111) surface

AbstractThe deposition kinetics of InP in MOCVD reactors is presented. The proposed chemical mechanism involves both gas phase and surface reactions. The fundamental hypothesis adopted in deriving the mechanism was a dual site dissociative adsorption of the precursors on the growing surface. In any case, all the rate constants either were taken from the literature or estimated through thermochemical methods. In addition, the deposition reactor was simulated by means of a monodimensional model that accounts for the main reactor features through the boundary layer theory.

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Oxygen transport during formation and decomposition of AgNbO3 and AgTaO3

Journal of Materials Research ◽

10.1557/jmr.2007.0196 ◽

2007 ◽

Vol 22 (6) ◽

pp. 1650-1655 ◽

Cited By ~ 9

Author(s):

Matjaz Valant ◽

Anna-Karin Axelsson ◽

Bin Zou ◽

Neil Alford

Keyword(s):

Gas Phase ◽

Molecular Oxygen ◽

Oxygen Transport ◽

Perovskite Phase ◽

Critical Parameters ◽

Reaction Site ◽

Partial Pressure Of Oxygen ◽

Thermogravimetric Method ◽

Starting Mixture ◽

Kinetics Of

A thermogravimetric method was used to analyze intermediate processes involved in the formation and decomposition of AgNbO3and AgTaO3perovskites. Critical parameters that control the kinetics of the formation are associated with oxygen transport. The Nb2O5crystal structure has a capacity to trap molecular oxygen, which evolves during the decomposition of Ag2O that is present in a starting mixture. The formation of the perovskite phase involves a simultaneous reaction of three species: O2, Ag, and Nb2O5/Ta2O5. As the trapped molecular oxygen is in the immediate vicinity of the reaction site, the kinetics of the reaction is significantly accelerated. An absence of the molecular oxygen in the solid-state phase cannot be compensated for with an increase in a partial pressure of oxygen in the gas phase, that is, application of oxygen atmosphere.

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Diffusion model for deposition of epitaxial GaAs layers prepared by the MOCVD method

Collection of Czechoslovak Chemical Communications ◽

10.1135/cccc19912020 ◽

1991 ◽

Vol 56 (10) ◽

pp. 2020-2029

Author(s):

Jindřich Leitner ◽

Petr Voňka ◽

Josef Stejskal ◽

Přemysl Klíma ◽

Rudolf Hladina

Keyword(s):

Experimental Data ◽

Growth Rate ◽

Kinetic Model ◽

Gas Phase ◽

Substrate Surface ◽

Deposition Process ◽

Hydrogen Atmosphere ◽

Epitaxial Gaas ◽

Kinetics Of ◽

Good Agreement

The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.

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Kinetics of the intramolecular four-center elimination of isobutylene from triisobutylaluminum in the gas phase

Journal of the American Chemical Society ◽

10.1021/ja01039a007 ◽

1969 ◽

Vol 91 (11) ◽

pp. 2867-2871 ◽

Cited By ~ 44

Author(s):

Kurt W. Egger

Keyword(s):

Gas Phase ◽

Kinetics Of

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Kinetics of 1- and 2-methylallyl + O2 reaction, investigated by photoionisation using synchrotron radiation

Physical Chemistry Chemical Physics ◽

10.1039/d0cp05441k ◽

2021 ◽

Author(s):

Domenik Schleier ◽

Engelbert Reusch ◽

Marius Gerlach ◽

Tobias Preitschopf ◽

Deb Pratim Mukhopadhyay ◽

...

Keyword(s):

Synchrotron Radiation ◽

Reaction Kinetics ◽

Molecular Oxygen ◽

Light Source ◽

Storage Ring ◽

Vacuum Ultraviolet ◽

Flow Tube ◽

Tube Reactor ◽

Swiss Light Source ◽

Kinetics Of

The reaction kinetics of the isomers of the methylallyl radical with molecular oxygen has been studied in a flow tube reactor at the vacuum ultraviolet (VUV) beamline of the Swiss Light Source storage ring.

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