The effect of channel length on turn-on voltage in pentacene-based thin film transistor

As organic transistors are preparing to make improvements towards flexible and low cost electronics applications, the analytical models and simulation methods were demanded to predict the optimized performance and circuit design. In this paper, we investigated the analytical model of an organic transistor device and simulate the output and transfer characteristics of the device using MATLAB tools for different channel length (L) of the organic transistor. In the simulation, the Pool-Frenkel mobility model was used to represent the conductive channel of organic transistor. The different channel length has been simulated with the value of 50 μm, 10 μm and 5 μm. This research paper analyses the performance of organic thin film transistor (TFT) for top contact bottom gate device. From the simulation, drain current of organic transistor was increased as the channel length decreased. Other extraction value such sub-threshold and current on/off ratio is 0.41 V and 21.1 respectively. Thus, the simulation provides significant extraction of information about the behaviour of the organic thin film transistor.

Download Full-text

Fabrication of 120-nm-channel-length ferroelectric-gate thin-film transistor by nanoimprint lithography

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.02bc14 ◽

2014 ◽

Vol 53 (2S) ◽

pp. 02BC14 ◽

Cited By ~ 3

Author(s):

Koji Nagahara ◽

Bui Nguyen Quoc Trinh ◽

Eisuke Tokumitsu ◽

Satoshi Inoue ◽

Tatsuya Shimoda

Keyword(s):

Thin Film ◽

Nanoimprint Lithography ◽

Thin Film Transistor ◽

Channel Length

Download Full-text

Deposition of Highly Conductive n+ Silicon Film for a-Si:H Thin Film Transistor

MRS Proceedings ◽

10.1557/proc-507-891 ◽

1998 ◽

Vol 507 ◽

Cited By ~ 3

Author(s):

Yue Kuo ◽

K. Latzko

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Silicon Film ◽

Chemical Vapor ◽

Channel Length ◽

Process Conditions ◽

Silicon Thin Film ◽

Wide Range ◽

Phosphorus Doped ◽

Deposited Films

ABSTRACTPlasma enhanced chemical vapor deposition of phosphorus-doped n+ silicon film over a wide range of process conditions has been studied. The deposited films were characterized with SIMS, Raman, and XRD. An unusually abrupt change of resistivity over a small SiH4(1% PH3) flow rate has been observed and was correlated to the variation of the film's morphology from amorphous to micrycrystalline. The grains are less than 50 Å in size and has strong <111> orientation. Amorphous silicon thin film transistors with microcrystalline n+ source and drain contacts have consistently good device characteristics. However, the contact resistance is comparable to the channel resistance when the channel length approaches 1 micrometer.

Download Full-text

Effect of Channel Thickness, Annealing Temperature and Channel Length on Nanoscale Ga2O3–In2O3–ZnO Thin Film Transistor Performance

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2016.12117 ◽

2016 ◽

Vol 16 (6) ◽

pp. 6364-6367 ◽

Cited By ~ 1

Author(s):

Yogeenth Kumaresan ◽

Yusin Pak ◽

Namsoo Lim ◽

Ryeri Lee ◽

Hui Song ◽

...

Keyword(s):

Thin Film ◽

Annealing Temperature ◽

Thin Film Transistor ◽

Channel Length ◽

Zno Thin Film ◽

Channel Thickness

Download Full-text

Flexible Quasi-Vertical In-Ga-Zn-O Thin-Film Transistor With 300-nm Channel Length

IEEE Electron Device Letters ◽

10.1109/led.2015.2418295 ◽

2015 ◽

Vol 36 (5) ◽

pp. 475-477 ◽

Cited By ~ 20

Author(s):

Luisa Petti ◽

Andreas Frutiger ◽

Niko Munzenrieder ◽

Giovanni A. Salvatore ◽

Lars Buthe ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Channel Length

Download Full-text

The p-channel a-Si:H Thin Film Transistor with Plasma Etched Copper Electrodes

MRS Proceedings ◽

10.1557/proc-808-a4.12 ◽

2004 ◽

Vol 808 ◽

Author(s):

Helinda Nominanda ◽

Guojun Liu ◽

Hyun Ho Lee ◽

Yue Kuo

Keyword(s):

Thin Film ◽

Plasma Etching ◽

Threshold Voltage ◽

Ohmic Contacts ◽

Thin Film Transistor ◽

Channel Length ◽

Current Ratio ◽

Copper Electrodes ◽

Annealing Step ◽

Sinx Layer

ABSTRACTP-channel thin film transistors (TFTs) with a copper (Cu) gate, source, and drain electrodes, prepared by a novel plasma etching process, have been fabricated and studied. The p-channel TFT characteristics are similar to those of the p-channel TFT with Mo electrodes. The influence of the channel length on the TFT characteristics, such as mobility, threshold voltage, and on-off current ratio, was examined. In spite of its low mobility, good device characteristics, such as ohmic contacts, were obtained. Most of the TFT characteristics, except the threshold voltage, were not affected by an extended high-temperature annealing step. The increase of the threshold voltage was probably due to the lack of a diffusion barrier between the gate Cu and the gate SiNx layer.

Download Full-text