Analyzing the network formation and curing kinetics of epoxy resins by in situ near-infrared measurements with variable heating rates

2015 ◽  
Vol 616 ◽  
pp. 49-60 ◽  
Author(s):  
E. Duemichen ◽  
M. Javdanitehran ◽  
M. Erdmann ◽  
V. Trappe ◽  
H. Sturm ◽  
...  
2010 ◽  
Vol 28 (6) ◽  
pp. 961-969 ◽  
Author(s):  
Li-ying Zhao ◽  
Jian-guo Guan ◽  
Hui-ru Ma ◽  
Zhi-gang Sun

2013 ◽  
Vol 702 ◽  
pp. 119-122
Author(s):  
Teng Fei Shen ◽  
Fa Chao Wu ◽  
Ying Juan Sun

A series of novel azo-containing twin liquid crystalline (LC) epoxy monomers were cured with anhydrides without extra catalyst and the curing kinetics was investigated by non-isothermal differential scanning calorimetry (DSC) technique. The effect of Azo group on the Curing Kinetics of Epoxy/anhydride System was investigated and the result showed that Azo group served as a catalyst to accelerate the curing reaction. The curing mechanism was confirmed by the UV-Vis spectrum.


2007 ◽  
Vol 53 (1) ◽  
pp. 113-126 ◽  
Author(s):  
Tito Olcese ◽  
Osvaldo Spelta ◽  
Silvio Vargiu

2014 ◽  
Vol 109 ◽  
pp. 218-225 ◽  
Author(s):  
Jianhua Hu ◽  
Jiye Shan ◽  
Dehua Wen ◽  
Xinxing Liu ◽  
Jianqing Zhao ◽  
...  

1993 ◽  
Vol 13 (4) ◽  
pp. 571-584 ◽  
Author(s):  
C. Carfagna ◽  
E. Amendola ◽  
M. Giamberini ◽  
A. G. Filippov ◽  
R. S. Bauer

1995 ◽  
Vol 387 ◽  
Author(s):  
E. G. Colgan ◽  
C. Cabral ◽  
L. A. Clevenger ◽  
J. M. E. Harper

AbstractMeasurement of resistance in-situ during rapid thermal annealing is a powerful technique for process characterization and optimization. A major advantage of in-situ resistance measurements is the very rapid process learning. With silicides, in-situ resistance measurements can quickly determine an appropriate thermal process in which a low resistance silicide phase is formed without the agglomeration or inversion of silicide/polycrystalline silicon structures. One example is an optimized two step anneal for CoSi2 formation which was developed in less than one day. Examples of process characterization include determining the phase formation kinetics of TiSi2 (C49 and C54), Co2Si, and CoSi2 using in-situ ramped resistance measurements. The stability of TiSi2 or CoSi2/poly-Si structures has also been characterized by isothermal measurements. Resistance measurements have been made at heating rates from 1 to 100°C/s and temperatures up to 1000°C. The sample temperature was calibrated by melting Ag, Al, or Au/Si eutectics.


Sign in / Sign up

Export Citation Format

Share Document