In-Situ resistance Measurements During Rapid Thermal Annealing for Process Characterization

1995 ◽  
Vol 387 ◽  
Author(s):  
E. G. Colgan ◽  
C. Cabral ◽  
L. A. Clevenger ◽  
J. M. E. Harper
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicide Phase ◽  
Heating Rates ◽  
Process Characterization ◽  
Process Learning ◽  
Silicon Structures ◽  
The Stability ◽  
Kinetics Of

AbstractMeasurement of resistance in-situ during rapid thermal annealing is a powerful technique for process characterization and optimization. A major advantage of in-situ resistance measurements is the very rapid process learning. With silicides, in-situ resistance measurements can quickly determine an appropriate thermal process in which a low resistance silicide phase is formed without the agglomeration or inversion of silicide/polycrystalline silicon structures. One example is an optimized two step anneal for CoSi2 formation which was developed in less than one day. Examples of process characterization include determining the phase formation kinetics of TiSi2 (C49 and C54), Co2Si, and CoSi2 using in-situ ramped resistance measurements. The stability of TiSi2 or CoSi2/poly-Si structures has also been characterized by isothermal measurements. Resistance measurements have been made at heating rates from 1 to 100°C/s and temperatures up to 1000°C. The sample temperature was calibrated by melting Ag, Al, or Au/Si eutectics.

In-Situ Resistance Measurements During Rapid Thermal Annealing for Process Characterization

1995 ◽  
Vol 389 ◽  
Author(s):  
E.G. Colgan ◽  
C. Cabral ◽  
L.A. Clevenger ◽  
J.M.E. Harper
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicide Phase ◽  
Heating Rates ◽  
Process Characterization ◽  
Process Learning ◽  
Silicon Structures ◽  
The Stability ◽  
Kinetics Of

ABSTRACTMeasurement of resistance in-situ during rapid thermal annealing is a powerful technique for process characterization and optimization. A major advantage of in-situ resistance measurements is the very rapid process learning. With silicides, in-situ resistance measurements can quickly determine an appropriate thermal process in which a low resistance silicide phase is formed without the agglomeration or inversion of silicide/polycrystalline silicon structures. One example is an optimized two step anneal for CoSi2 formation which was developed in less than one clay. Examples of process characterization include determining the phase formation kinetics of TiSi2 (C49 and C54), Co2Si, and CoSi2 using in-situ ramped resistance measurements. The stability of TiSi2 or CoSi2/poly-Si structures has also been characterized by isothermal measurements. Resistance measurements have been made at heating rates from 1 to 100°C/s and temperatures up to 1000°C. The sample temperature was calibrated by melting Ag, Al, or Au/Si eutectics.

Formation of TiSi2 During Rapid Thermal Annealing: In Situ Resistance Measurements at Heating Rates From 1°C/S to 100°C/S.

1993 ◽  
Vol 303 ◽  
Author(s):  
Ramanath Ganapathiraman ◽  
S. Koh ◽  
Z. Ma ◽  
L. H. Allen ◽  
S. Lee
Keyword(s):  
Thermal Annealing ◽  
Phase Formation ◽  
Rapid Thermal Annealing ◽  
Resistivity Measurement ◽  
Ex Situ ◽  
Study Phase ◽  
Phase Identification ◽  
Heating Rates ◽  
Wide Range

ABSTRACTIn VLSI technology, there is interest in monitoring the sequence of phase formation of TiSi2 (c-Ti ⇒ a-TiSi ⇒ C49 TiSi2 ⇒ C54 TiSi2), with the prospect of reducing the temperature of formation of the stable C54 TiSi2 phase. In this study, phase formation characteristics of TiSi2 during rapid thermal annealing(RTA) of Ti-Si bilayers are investigated by means of in situ four point probe resistance measurements. Ex situ X-ray diffraction(XRD) was used for phase identification and characterization. Results indicate that the same multi-step sequence of transformations precede the formation of the C54 TiSi2 phase for heating rates from 1°C/s to 100°C/s. Also, all intermediate and metastable phases which occur at l°C/s also occur at 100°C/s. Temperature dependence and kinetics of the C49 TiSi2 and the C54 TiSi2 phase formation were studied over a wide range of heating rates. Activation energies estimated for the two processes were ∼2eV and ∼5eV respectively. Finally, a new Electrical Thermal Annealing(ETA) technique for heating at rates up to 30000°C/s is introduced. Preliminary in situ resistivity measurement results of TiSi2 formation at these high heating rates are also presented.

omparisons of Silicide Formation by Rapid Thermal Annealing and Conventional Furnace Annealing

1987 ◽  
Vol 92 ◽  
Author(s):  
E. Ma ◽  
M. Natan ◽  
B.S. Lim ◽  
M-A. Nicolet
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
Cross Sectional ◽  
Conventional Furnace ◽  
Diffusion Controlled ◽  
Conventional Furnace Annealing ◽  
Kinetics Of

ABSTRACTSilicide formation induced by rapid thermal annealing (RTA) and conventional furnace annealing (CFA) in bilayers of sequentially deposited films of amorphous silicon and polycrystalline Co or Ni is studied with RBS, X-ray diffraction and TEM. Particular attention is paid to the reliability of the RTA temperature measurements in the study of the growth kinetics of the first interfacial compound, Co2Si and Ni2Si, for both RTA and CFA. It is found that the same diffusion-controlled kinetics applies for the silicide formation by RTA in argon and CFA in vacuum with a common activation energy of 2.1+0.2eV for Co2Si and 1.3+0.2eV for Ni Si. Co and Ni atoms are the dominant diffusing species; during silicide formation by both RTA and CFA. The microstructures of the Ni-silicide formed by the two annealing techniques, however, differs considerably from each other, as revealed by cross-sectional TEM studies.

In-Situ Rapid Thermal Annealing of Heterostructures Grown by Molecular Beam Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
M. Cerullo ◽  
Julia M. Phillips ◽  
M. Anzlowar ◽  
L. Pfeiffer ◽  
J. L. Batstone ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
High Vacuum ◽  
Processing Technique ◽  
Ultra High Vacuum ◽  
On Line ◽  
High Vacuum Environment

ABSTRACTA new in-situ rapid thermal annealing (RTA) apparatus which can be used to anneal entire wafers in an ultra high vacuum environment has been designed to be used in conjunction with the epitaxial growth of heterostructures. Drastic improvement in the crystallinity of CaF2/Si(100) can be achieved with RTA, and our results suggest that RTA can be used as an on-line processing technique for novel epitaxial structures.

The TEOS oxide deposited on phosphorus in-situ/POCl/sub 3/ doped polysilicon with rapid thermal annealing in N/sub 2/O

1998 ◽  
Vol 45 (9) ◽  
pp. 1927-1933 ◽  
Author(s):  
Chyuan-Haur Kao ◽  
Chao-Sung Lai ◽  
Chung-Len Lee
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing

Phase Formation and Kinetic Processes in Silicide Growth.

1983 ◽  
Vol 25 ◽  
Author(s):  
G. Ottaviani
Keyword(s):  
Boundary Conditions ◽  
Phase Formation ◽  
Growth Kinetics ◽  
Metal Layer ◽  
Silicide Phase ◽  
Reaction Products ◽  
Silicon Structures ◽  
Silicide Growth ◽  
Kinetic Processes ◽  
Kinetics Of

ABSTRACTTwenty years of research have now been devoted to investigating reaction products obtained by annealing metal-layer/silicon structures. A wide variety of cases have been analyzsed and a considerable amount of data has been produced. Despite the vast amount of information available, several aspects concerning phase formation and kinetic processes are not yet well established. The purpose of this paper is to investigate the mechanisms of phase formation and to show the importance of kinetic factors in the appearance of various compounds. Results will be shown for a single metal layer deposited on silicon, for bilayers. and for alloys. Depending upon the starting structure, metal-rich or silicon-rich silicides can be formed. Moreover, by modifying the boundary conditions, it is possible to change the growth kinetics of the silicide phase that forms.

Thermal Stability of Retained Austenite in Low Alloyed TRIP-Steel Determined by High Energy Synchrotron Radiation

2013 ◽  
Vol 772 ◽  
pp. 129-133
Author(s):  
Stefan Brauser ◽  
Arne Kromm ◽  
Eitan Dabah ◽  
Thomas Kannengiesser ◽  
Michael Rethmeier
Keyword(s):  
Synchrotron Radiation ◽  
High Energy ◽  
Heating Process ◽  
Austenitic Phase ◽  
Trip Steels ◽  
The Stability ◽  
In Situ Diffraction ◽  
Kinetics Of ◽  
Thermal Stability Of

TRIP-steels offer a good combination between strength and ductility. Therefore TRIP-steels are widely used in the automobile industries. The aim of this work is to study the stability of involved phases during heating and to identify the kinetics of the occuring phase transformations. For that purpose, in-situ diffraction measurements, using high energy synchrotron radiation were conducted. The analysis revealed the decomposition of the metastable austenitic phase into carbide and ferrite along the heating process and the regeneration of the austenite by further heating of the sample.

Electrical and Material Characterization of the Stability of ALGaAs and GaAs Planar Doped Structures

1989 ◽  
Vol 160 ◽  
Author(s):  
Larry P. Sadwick ◽  
Dwight C. Streit
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Diodes ◽  
Doping Profile ◽  
Charge Densities ◽  
Diode Ideality Factor ◽  
Sheet Charge ◽  
The Stability ◽  
Silicon Sheet

AbstractIn this work we have studied the effects of silicon planar doping on the electrical and optical properties of GaAs, and the effects of rapid thermal annealing on AIGaAs planar-doped structures. MBE-grown GaAs epilayers with multiple planar-doped layers displayed a 1.2 eV photoluminescence peak, presumably due to gallium vacancy - donor complexes, for samples with nominal silicon sheet densities much greater than measured charge densities. The Hall mobilities of these samples were also reduced compared to both uniformly-doped and planar-doped structures whose silicon areal densities were more nearly equal to measured sheet charge densities, although X-Ray rocking curves were nearly identical in all cases. Planar-doped AIGaAs Schottky diodes had nearly ideal electrical characteristics. Rapid thermal annealing of the planar-doped structures before fabrication increased the diode ideality factor from n=1.06 to n=1.60, seriously degraded the saturation current and breakdown voltage, and increased the doping profile FWHM from 60Å to 170Å.

Sign in / Sign up

Export Citation Format

Share Document