Effects of H2 in indium–molybdenum oxide films during high density plasma evaporation at room temperature

2004 ◽  
Vol 469-470 ◽  
pp. 6-10 ◽  
Author(s):  
Shi-Yao Sun ◽  
Jow-Lay Huang ◽  
Ding-Fwu Lii
Keyword(s):  
Molybdenum Oxide ◽  
Room Temperature ◽  
Oxide Films ◽  
High Density ◽  
Density Plasma

Properties of Indium Molybdenum Oxide Films Fabricated Via High-Density Plasma Evaporation at Room Temperature

2005 ◽  
Vol 20 (1) ◽  
pp. 247-255 ◽  
Author(s):  
Shi-Yao Sun ◽  
Jow-Lay Huang ◽  
Ding-Fwu Lii
Keyword(s):  
Oxygen Content ◽  
Molybdenum Oxide ◽  
Room Temperature ◽  
Weight Ratio ◽  
Optical Transmittance ◽  
High Density ◽  
Low Oxygen ◽  
High Oxygen Content ◽  
Average Optical Transmittance ◽  
Density Plasma

The goal of this study was to determine the scattering mechanisms and investigate the optoelectronic properties of indium molybdenum oxide (IMO) films. IMO films were deposited from an In2O3/MoO3 target with a weight ratio of 99/1, 95/5 and 90/10 via high-density plasma evaporation at room temperature. Based on the structural, electrical and optical properties, this study proposed that the neutral complex [(2Mo‧In)Oi″]x dominated at high doping content and high oxygen content, whereas ionized complex Mo‧‧‧In Oi″]‧ dominated at low doping level or low oxygen content. Uniform 99/1 IMO films with minimum resistivity of 3.56 × 10−4 Ω cm (corresponding to a mobility of 14.6 cm2V−1s−1 and carrier concentration of 14.3 × 1020 cm−3) and average visible transmittance of ∼85% were produced at an optimum oxygen content of ∼9%. Average optical transmittance exceeding 80% was demonstrated, and a structural change appeared at low oxygen contents.

Characterization of Zinc Oxide Films Grown by a Newly Developed Plasma Enhanced MOCVD Employing Microwave Excited High Density Plasma

2007 ◽  
Author(s):  
Hirokazu Asahara ◽  
Atsutoshi Inokuchi ◽  
Kohei Watanuki ◽  
Masaki Hirayama ◽  
Akinobu Teramoto ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Oxide Films ◽  
High Density ◽  
Zinc Oxide Films ◽  
Density Plasma

High-density plasma silicon oxide thin films grown at room-temperature

2008 ◽  
Vol 85 (5-6) ◽  
pp. 1245-1247
Author(s):  
M.E. Vlachopoulou ◽  
P. Dimitrakis ◽  
A. Tserepi ◽  
V.Em. Vamvakas ◽  
S. Koliopoulou ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Silicon Oxide ◽  
High Density ◽  
Oxide Thin Films ◽  
Density Plasma

High-density plasma etching of indium–zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries

2006 ◽  
Vol 253 (5) ◽  
pp. 2752-2757 ◽  
Author(s):  
W.T. Lim ◽  
L. Stafford ◽  
Ju-Il Song ◽  
Jae-Soung Park ◽  
Y.W. Heo ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Plasma Etching ◽  
Oxide Films ◽  
High Density ◽  
Zinc Oxide Films ◽  
Indium Zinc Oxide ◽  
Density Plasma

Surface treatments of indium tin oxide films by using high density plasma

2011 ◽  
Vol 519 (20) ◽  
pp. 6824-6828 ◽  
Author(s):  
Jae-Hyung Wi ◽  
Jong-Chang Woo ◽  
Chang-Il Kim
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Films ◽  
Surface Treatments ◽  
High Density ◽  
Tin Oxide Films ◽  
Density Plasma
Sign in / Sign up

Export Citation Format

Share Document