High hole concentration of p-type InGaN epitaxial layers grown by MOCVD

ZnO films were deposited on Si (100) substrate by ultrasonic spray pyrolysis at atmosphere. The film grown at optimum conditions is well crystallized with uniform, smooth and dense microstructure. Photoluminescence measurement shows a strong near band edge UV emission at 379nm and an almost undetectable deep-level emission band centered at 502nm. The resistivity of ZnO film is reduced by an order after N-In codoping, which produces p-type conduction with high hole concentration and hall mobility.

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MOCVD Growth of High Hole Concentration (〉2x1019 cm-3) P-Type InGaN for Solar Cell Application

10.1557/proc-1123-p07-02 ◽

2008 ◽

Author(s):

Andrew Melton ◽

Hongbo Yu ◽

Omkar Jani ◽

Balakrishnam R. Jampana ◽

Shen-Jie Wang ◽

...

Keyword(s):

Solar Cell ◽

Hole Concentration ◽

Solar Cell Application ◽

Mocvd Growth ◽

High Hole Concentration ◽

P Type

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AlN and AlGaN by MOVPE for UV Light Emitting Devices

Materials Science Forum ◽

10.4028/www.scientific.net/msf.590.175 ◽

2008 ◽

Vol 590 ◽

pp. 175-210 ◽

Cited By ~ 1

Author(s):

Hiroshi Amano ◽

Masataka Imura ◽

Motoaki Iwaya ◽

Satoshi Kamiyama ◽

Isamu Akasaki

Keyword(s):

Vapor Phase ◽

High Efficiency ◽

Uv Light ◽

Hole Concentration ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Light Emitting ◽

Light Emitting Devices ◽

High Hole Concentration ◽

P Type

The fundamental growth issues of AlN and AlGaN on sapphire and SiC using metalorganic vapor phase epitaxy, particularly the growth of AlN and AlGaN on a groove-patterned template are reviewed. In addition, the conductivity control of AlGaN is shown. The conductivity control of p-type AlGaN, particularly the realization of a high hole concentration, is essential for realizing high-efficiency UV and DUV LEDs and LDs.

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Combining High Hole Concentration in p-GaN and High Mobility in u-GaN for High p-Type Conductivity in a p-GaN/u-GaN Alternating-Layer Nanostructure

IEEE Transactions on Electron Devices ◽

10.1109/ted.2016.2631148 ◽

2017 ◽

Vol 64 (1) ◽

pp. 115-120 ◽

Cited By ~ 5

Author(s):

Hao-Tsung Chen ◽

Chia-Ying Su ◽

Charng-Gan Tu ◽

Yu-Feng Yao ◽

Chun-Han Lin ◽

...

Keyword(s):

Hole Concentration ◽

High Mobility ◽

Type Conductivity ◽

High Hole Concentration ◽

P Type

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MOCVD Growth of High-Hole Concentration (>2×1019 cm−3) P-Type InGaN for Solar Cell Application

MRS Proceedings ◽

10.1557/proc-1123-1123-p07-02 ◽

2008 ◽

Vol 1123 ◽

Cited By ~ 1

Author(s):

Hongbo Yu ◽

Andrew Melton ◽

Omkar Jani ◽

Balakrishnam Jampana ◽

Shenjie Wang ◽

...

Keyword(s):

Solar Cell ◽

Hole Concentration ◽

Molar Ratio ◽

Activation Temperature ◽

Solar Cell Application ◽

Mocvd Growth ◽

High Hole Concentration ◽

P Type ◽

Photovoltaic Material ◽

Mg Doped

AbstractInGaN alloys are widely researched in diverse optoelectronic applications. This material has also been demonstrated as a photovoltaic material. This paper presents the study to achieve optimum electrically active p-type InGaN epi-layers. Mg doped InGaN films with 20% In composition are grown on GaN templates/sapphire substrates by MOCVD. It is found that the hole concentration of p-type InGaN depends strongly on the Mg flow rate and V/III molar ratio and hole concentration greater than 2×1019 cm−3 has been achieved at room temperature. The optimum activation temperature of Mg-doped InGaN layer has been found to be 550-600°C, which is lower than that of Mg-doped GaN. A solar cell was realized successfully using the InGaN epi-layers presented here.

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Realizing n-type gete through suppressing the formation of cation vacancies and bi-doping*

Chinese Physics Letters ◽

10.1088/0256-307x/38/12/127201 ◽

2021 ◽

Vol 38 (12) ◽

pp. 127201

Author(s):

Min Zhang ◽

Chaoliang Hu ◽

Qi Zhang ◽

Feng Liu ◽

Shen Han ◽

...

Keyword(s):

Band Structure ◽

Formation Energy ◽

Electronic Band Structure ◽

Hole Concentration ◽

Thermoelectric Performance ◽

Electronic Band ◽

Cation Vacancies ◽

Bi Doping ◽

High Hole Concentration ◽

P Type

It is known that p-type GeTe-based materials show excellent thermoelectric performance due to the favorable electronic band structure. However, n-type doping in GeTe is of challenge owing to the native Ge vacancies and high hole concentration of about 1021 cm−3. In the present work, the formation energy of cation vacancies of GeTe is increased through alloying PbSe, and further Bi-doping enables the change of carrier conduction from p-type to n-type. As a result, the n-type thermoelectric performance is obtained in GeTe-based materials. A peak zT of 0.34 at 525 K is obtained for (Ge0.6Pb0.4)0.88Bi0.12Te0.6Se0.4. These results highlight the realization of n-type doping in GeTe and pave the way for further optimization of the thermoelectric performance of n-type GeTe.

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High hole concentration in p-type AlGaN by indium-surfactant-assisted Mg-delta doping

Applied Physics Letters ◽

10.1063/1.4919005 ◽

2015 ◽

Vol 106 (16) ◽

pp. 162102 ◽

Cited By ~ 47

Author(s):

Yingda Chen ◽

Hualong Wu ◽

Enze Han ◽

Guanglong Yue ◽

Zimin Chen ◽

...

Keyword(s):

Hole Concentration ◽

Delta Doping ◽

High Hole Concentration ◽

P Type ◽

Surfactant Assisted

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P-type GaN epitaxial layers and AlGaN/GaN heterostructures with high hole concentration and mobility grown by HVPE

MRS Proceedings ◽

10.1557/proc-831-e8.28 ◽

2004 ◽

Vol 831 ◽

Cited By ~ 2

Author(s):

A. Usikov ◽

O. Kovalenkov ◽

V. Ivantsov ◽

V. Sukhoveev ◽

V. Dmitriev ◽

...

Keyword(s):

Hole Concentration ◽

Hole Mobility ◽

Hydride Vapor Phase Epitaxy ◽

Electrically Conducting ◽

Sapphire Substrates ◽

High Hole Concentration ◽

P Type ◽

Initial Results ◽

Mg Doped ◽

Effect Technique

ABSTRACTIn this paper we report p-GaN growth by hydride vapor phase epitaxy (HVPE) on sapphire substrates. Mg or Zn impurities were used for doping. Layer thickness ranged from 2 to 5 microns. For both impurities, as-grown GaN layers had p-type conductivity. Concentration NA-ND was varied from 1016 to 1018 cm−3. An annealing procedure at 750°C in argon ambient typically increased the concentration NA-ND in 1.5–3.5 times. For Mg doped GaN layers, room temperature hole mobility of 80 cm2V−1s−1 was measured by conventional Van Der Pau Hall effect technique for material having hole concentration of about 1x1018 cm−3. Initial results on highly electrically conducting p-type AlGaN/GaN heterostructures doped with Zn are also reported.

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Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN

Physics of the Solid State ◽

10.1134/s1063783415100042 ◽

2015 ◽

Vol 57 (10) ◽

pp. 1966-1971 ◽

Cited By ~ 2

Author(s):

V. N. Bessolov ◽

A. S. Grashchenko ◽

E. V. Konenkova ◽

A. V. Myasoedov ◽

A. V. Osipov ◽

...

Keyword(s):

Buffer Layer ◽

Growth Mechanism ◽

Epitaxial Layers ◽

P Type

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SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties

Materials Science Forum ◽

10.4028/www.scientific.net/msf.556-557.153 ◽

2007 ◽

Vol 556-557 ◽

pp. 153-156

Author(s):

Chi Kwon Park ◽

Gi Sub Lee ◽

Ju Young Lee ◽

Myung Ok Kyun ◽

Won Jae Lee ◽

...

Keyword(s):

Electrical Properties ◽

Epitaxial Layer ◽

Light Emission ◽

Epitaxial Layers ◽

Current Voltage ◽

Space Technique ◽

Sublimation Method ◽

Device Applications ◽

P Type ◽

Surface Morphologies

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. The blue light emission was successfully observed on a PN diode structure fabricated with the p-type SiC epitaxial layer. Furthermore, 4H-SiC MESFETs having a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized.

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