Performance improvement of poly-Si tunnel thin-film transistor by NH3 plasma treatment

2016 ◽  
Vol 618 ◽  
pp. 178-183 ◽  
Author(s):  
William Cheng-Yu Ma ◽  
Yi-Hsuan Chen ◽  
Zheng-Yi Lin ◽  
Yao-Sheng Huang ◽  
Bo-Siang Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Performance Improvement ◽  
Thin Film Transistor

Performance improvement of solution-processed InZnO thin film transistor with HfO2 vertical diffusion layer

2019 ◽  
Vol 215 ◽  
pp. 110999
Author(s):  
Sanghyun Lee ◽  
Se Hyeong Lee ◽  
Kyoungwan Woo ◽  
Yoo-Jong Kim ◽  
So-Young Bak ◽  
...  
Keyword(s):  
Thin Film ◽  
Performance Improvement ◽  
Diffusion Layer ◽  
Thin Film Transistor ◽  
Vertical Diffusion ◽  
Solution Processed

Effects of N2 Plasma Treatment on SiO2 Gate Insulator in a-Si:H Thin Film Transistor

1994 ◽  
Vol 345 ◽  
Author(s):  
Sung Chul Kim ◽  
Sung Sig Bae ◽  
Eui Yeol Oh ◽  
Jeong Hyun Kim ◽  
Jong Wan Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
High Performance ◽  
Thin Film Transistor ◽  
Interface Layer ◽  
Experimental Results ◽  
Gate Insulator ◽  
Interface Region ◽  
Sequential Deposition ◽  
N2 Plasma

AbstractWe fabricated the high performance a-Si:H TFT using the N2 plasma treated APCVD SiO2 as a gate insulator. The effects of N2 plasma treatment on the APCVD SiO2 were investigated by XPS and SIMS measurements. And the formation of the oxynitride interface layer between a-Si:H and APCVD SiO2 was found in the a-Si:H TFT. From our experimental results, It may be concluded that most nitrogen atoms, which were incorporated by the exposure of SiO2 layer to N2 plasma, exist, not bonded to other atoms, near the surface of the SiO2 layer and during the sequential deposition of a-Si:H on the N2 plasma treated APCVD SiO2 layer Si-N bonds are formed, resulting in the oxynitride layer in the interface region. This explains the high performance a-Si:H TFT with the N2 plasma treated APCVD SiO2 gate insulator.

Reduction of photoleakage current in polycrystalline silicon thin-film transistor using NH3 plasma treatment on buffer layer

2008 ◽  
Vol 92 (15) ◽  
pp. 153507 ◽  
Author(s):  
Hau-Yan Lu ◽  
Ting-Chang Chang ◽  
Po-Tsun Liu ◽  
Hung-Wei Li ◽  
Chin-Wei Hu ◽  
...  
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Buffer Layer ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film
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