Positive-Bias Temperature Instability Improvement of Poly-Si Thin-Film Transistor With HfO2 Gate Dielectric by Ammonia Plasma Treatment
1999 ◽
Vol 50
(3)
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pp. 273-277
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2011 ◽
Vol 11
(5)
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pp. S67-S72
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2015 ◽
Vol 54
(4S)
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pp. 04DP17
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