Multi-level resistive write-once-read-many memory device based on CdSe/ZnS quantum dots and ZnO nanoparticles

2020 ◽  
Vol 709 ◽  
pp. 138120
Author(s):  
Na-Ri Kim ◽  
Sae-Wan Kim ◽  
Jin-Hyuk Bae ◽  
Shin-Won Kang
Keyword(s):  
Quantum Dots ◽  
Zno Nanoparticles ◽  
Memory Device ◽  
Multi Level

scholarly journals PERFORMANCE MEASUREMENT OF A MULTI-LEVEL/ANALOG FERROELECTRIC MEMORY DEVICE DESIGN

2007 ◽  
Vol 93 (1) ◽  
pp. 29-38 ◽  
Author(s):  
TODD C. MACLEOD ◽  
THOMAS A. PHILLIPS ◽  
FAT D. HO
Keyword(s):  
Performance Measurement ◽  
Memory Device ◽  
Device Design ◽  
Ferroelectric Memory ◽  
Multi Level

Transparent non-volatile memory device using silicon quantum dots

2013 ◽  
Vol 9 (4) ◽  
pp. 467-469 ◽  
Author(s):  
Nae-Man Park ◽  
Jaeheon Shin ◽  
Bosul Kim ◽  
Kyung Hyun Kim ◽  
Woo-Seok Cheong
Keyword(s):  
Quantum Dots ◽  
Memory Device ◽  
Silicon Quantum Dots ◽  
Non Volatile Memory ◽  
Volatile Memory

Improving Zr0.5Hf0.5O2-based charge-trapped performance by graphene oxide quantum dots

2019 ◽  
Vol 12 (01) ◽  
pp. 1850093 ◽  
Author(s):  
Hong Wang ◽  
Bangfu Ding ◽  
Xiaoyan Tian ◽  
Rui Zhao ◽  
Yuanyuan Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Graphene Oxide ◽  
Charge Trapping ◽  
Memory Device ◽  
Wide Bandgap ◽  
Photoelectron Spectra ◽  
Promising Candidate ◽  
New Type ◽  
Charge Trapping Memory ◽  
Graphene Oxide Quantum Dots

In this work, graphene oxide quantum dots (GOQDs) are introduced as an electron-trapped layer in Pd/Zr[Formula: see text]Hf[Formula: see text]O2 (ZHO)/SiO2/Si memory device. This structure possessed longer than 104 s retention capability, a low operation voltage around [Formula: see text][Formula: see text]V and 2.61[Formula: see text]V storage windows. GOQDs contained carbon–carbon and carbon–oxygen single/double bonds based on the analysis of C-1[Formula: see text] and O-1[Formula: see text] X-ray photoelectron spectra. It is proposed that the GOQDs’ wide bandgap with many oxygen-containing functional groups favors charge capture to a greater extent. This new type of charge-trapping memory can be a promising candidate for wide application to storing information with non-volatility in the big data era.

Large magnetization modulation in ZnO-based memory devices with embedded graphene quantum dots

2019 ◽  
Vol 21 (29) ◽  
pp. 16047-16054
Author(s):  
Tong Chen ◽  
Wei Chen ◽  
Lifu Liu ◽  
Yuan Wang ◽  
Xu Zhao
Keyword(s):  
Quantum Dots ◽  
Graphene Quantum Dots ◽  
Memory Device ◽  
Memory Devices

Large magnetization modulation up to 500% is achieved in ZnO-based memory device under applied biases of only 0.23/−0.20 V through embedding graphene quantum dots.

A tricolour photodetecting memory device based on lead sulfide colloidal quantum dots floating gate

2019 ◽  
Vol 75 ◽  
pp. 105111 ◽  
Author(s):  
Wen Li ◽  
Peng Zhang ◽  
Huanqun Li ◽  
Xuexi Sheng ◽  
Yu Li ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Lead Sulfide ◽  
Memory Device ◽  
Floating Gate ◽  
Colloidal Quantum Dots
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