Relationship between structure, surface topography and tribo-mechanical behavior of Ti-N thin films elaborated at different N2 flow rates

The TiAlN thin films with different crystal structure, surface morphology, microstructure and chemical compositions were deposited on Si (100) plane by changing the N2 flow rate from 2 to 10 sccm using co-targeted reactive magnetron sputtering technique in the same process. The effect of nitrogen flow rate on structure and properties of TiAlN thin films was investigated in the study. The films were characterized by X-ray Diffraction (XRD), Atomic Force Microscope (AFM) and Scanning Electron Microscope (SEM) techniques, respectively. The results show that the crystal structure, surface morphologies microstructure and chemical compositions of the film are strongly depended on the N2 flow rates. The (111) (200) and (220) planes of TiAlN thin films were found with different nitrogen flow rates, one is the preferred orientation of (111) plane that appeared for nitrogen flow rates of 2 sccm, the other one is the preferred orientation of (200) plane for the higher nitrogen flow rates of 4-10 sccm. The crystal size of the films was also determined by Scherrers equation, varied between 13.8 - 35.6 nm. The roughness of the as-deposited films was ranging from 1.8 to 4.3 nm. The chemical compositions of TiAlN were depended on N2 flow rates. The microstructure and cross-sectional SEM analysis revealed that the nanograins were developed and thickness decreased from 381 nm to 131 nm. In addition, the columnar structures were observed for all films.

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Swelling in spin-coated methylcellulose ultra-thin films: effect on film structure, surface topography, and temperature-response property

Soft Matter ◽

10.1039/c2sm25544h ◽

2012 ◽

Vol 8 (28) ◽

pp. 7351 ◽

Cited By ~ 2

Author(s):

Vallerie Ann Innis-Samson ◽

Kenji Sakurai

Keyword(s):

Thin Films ◽

Surface Topography ◽

Temperature Response ◽

Film Structure ◽

Response Property ◽

Structure Surface

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The phase transformation and mechanical behavior of NiTi thin films

10.1117/12.607619 ◽

2004 ◽

Author(s):

Zhenyu Yuan ◽

Xiulan Cheng ◽

Dong Xu ◽

Zhican Ye ◽

YaFei Zhang ◽

...

Keyword(s):

Thin Films ◽

Phase Transformation ◽

Mechanical Behavior

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Effect of size and moisture on the mechanical behavior of SU-8 thin films

Journal of Micromechanics and Microengineering ◽

10.1088/0960-1317/26/2/025020 ◽

2016 ◽

Vol 26 (2) ◽

pp. 025020 ◽

Cited By ~ 11

Author(s):

C J Robin ◽

K N Jonnalagadda

Keyword(s):

Thin Films ◽

Mechanical Behavior

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Crystallite structure, surface morphology and optical properties of In2O3–TiO2 composite thin films by sol–gel method

Materials Science and Engineering B ◽

10.1016/j.mseb.2008.05.019 ◽

2008 ◽

Vol 151 (2) ◽

pp. 179-186 ◽

Cited By ~ 38

Author(s):

Yunxia Chen ◽

Xuedong Zhou ◽

Xiujian Zhao ◽

Xin He ◽

Xingyong Gu

Keyword(s):

Thin Films ◽

Optical Properties ◽

Surface Morphology ◽

Sol Gel ◽

Composite Thin Films ◽

Gel Method ◽

Sol Gel Method ◽

Structure Surface ◽

Crystallite Structure

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Transparent Conductive Cu-In-O Thin Films Deposited by Reactive DC Magnetron Sputtering with Different Targets

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.239-242.2752 ◽

2011 ◽

Vol 239-242 ◽

pp. 2752-2755

Author(s):

Fan Ye ◽

Xing Min Cai ◽

Fu Ping Dai ◽

Dong Ping Zhang ◽

Ping Fan ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Optical Band Gap ◽

Diffraction Peak ◽

X Ray Diffraction ◽

Dc Magnetron Sputtering ◽

Flow Rates ◽

X Ray ◽

Equal Distance ◽

Transmittance Curve

Transparent conductive Cu-In-O thin films were deposited by reactive DC magnetron sputtering. Two types of targets were used. The first was In target covered with a fan-shaped Cu plate of the same radius and the second was Cu target on which six In grains of 1.5mm was placed with equal distance between each other. The samples were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/VIS spectrophotometer, four-probe measurement etc. SEM shows that the surfaces of all the samples are very smooth. EDX shows that the samples contain Cu, In as well as O, and different targets result in different atomic ratios of Cu to In. A diffraction peak related to rhombohedra-centered In2O3(012) is observed in the XRD spectra of all the samples. For both the two targets, the transmittance decreases with the increase of O2flow rates. The direct optical band gap of all the samples is also estimated according to the transmittance curve. For both the two targets, different O2flow rates result in different sheet resistances and conductivities. The target of Cu on In shows more controllability in the composition and properties of Cu-In-O films.

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Effects of V additions on the mechanical behavior of Au thin films for MEMS contact switches

10.1117/12.700834 ◽

2007 ◽

Cited By ~ 3

Author(s):

T. Bannuru ◽

S. Narksitipan ◽

W. L. Brown ◽

R. P. Vinci

Keyword(s):

Thin Films ◽

Mechanical Behavior ◽

Au Thin Films

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Shedding Light on Phase Stability and Surface Engineering of Formamidinium Lead Iodide (FaPbI3) Thin Films for Solar Cells

Engineering Proceedings ◽

10.3390/engproc2021012001 ◽

2021 ◽

Vol 12 (1) ◽

pp. 1

Author(s):

Julia Marí-Guaita ◽

Amal Bouich ◽

Bernabé Marí

Keyword(s):

Thin Films ◽

Surface Engineering ◽

Optical Analysis ◽

X Ray Diffraction ◽

Lead Iodide ◽

X Ray ◽

Structure Surface ◽

Uv Visible ◽

The Stability ◽

Humidity Environment

In this work, FAPbI3 thin films with different antisolvents (toluene, diethyl ether and chlorobenzene) were successfully elaborated by the spin coating technique to study the influence of the different antisolvents in the films. The crystal structure, surface morphology and optical properties were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM) photoluminescence and UV–visible spectrometry. According to XRD, the crystalline structure of FAPbI3 was found in the orientation of the (110) plane, and it is observed that the type of antisolvent content in the absorber layer plays an important role in the growth and stabilization of the film. Here, chlorobenzene leads to a smooth and homogenous surface, a large grain size and a pinhole-free perovskite film. Additionally, the optical analysis revealed that the band gap is in the range from 1.55 to 1.57 eV. Furthermore, in an approximately 60% humidity environment and after two weeks, the stability and absorption of FaPbI3 showed low degradation.

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