High textured AlN thin films grown by RF magnetron sputtering; composition, structure, morphology and hardness

Vacuum ◽  
2004 ◽  
Vol 75 (4) ◽  
pp. 331-338 ◽  
Author(s):  
I.C Oliveira ◽  
K.G Grigorov ◽  
H.S Maciel ◽  
M Massi ◽  
C Otani
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Structure Morphology ◽  
Composition Structure

Investigation of Nanostructure and Optical Properties of Flexible AZO Thin Films at Different Powers of RF Magnetron Sputtering

NANO ◽  
2018 ◽  
Vol 13 (06) ◽  
pp. 1850062 ◽  
Author(s):  
Sh. Khatami ◽  
L. Fekri Aval ◽  
G. Behzadi Pour
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Light Emitting ◽  
Structure Morphology ◽  
Xrd Patterns ◽  
Predominant Direction

In this study Al-doped Zinc Oxide (AZO) thin films were successfully deposited on the flexible Polymethyl methacrylate (PMMA) substrate by RF magnetron sputtering. The effects of RF power on the crystal structure, morphology, thickness and optical properties of AZO thin films have been investigated. The AZO thin films were analyzed using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), DEKTAK 3 profilometer, UV–Visible spectroscopy and room temperature photoluminescence (PL) spectroscopy. The XRD patterns show that increase of RF power leads to increase in the predominant direction along (100) and crystal plane of hexagonal ZnO. Moreover, the transmittance of thin films decreased from 76% to 61% and optical bang gap varied among 3.34[Formula: see text]eV to 3.22[Formula: see text]eV with increasing RF power. The PL spectra show excellent light-emitting characteristics: 375[Formula: see text]nm, 428[Formula: see text]nm, 467[Formula: see text]nm and 505[Formula: see text]nm. The results indicate that the peak intensity increases with increasing RF power from 80[Formula: see text]W to 180[Formula: see text]W.

Composition, Structure and Electrical Resistivity of TiOx Thin Films Deposited by RF Magnetron Sputtering at Varied Substrate Temperatures

2014 ◽  
Vol 602-603 ◽  
pp. 1039-1042 ◽  
Author(s):  
Hai Xia Su ◽  
Zhi Jian Peng ◽  
Xiu Li Fu
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Anatase Phase ◽  
Grazing Incidence ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Composition Structure ◽  
Substrate Temperatures ◽  
Deposited Films

TiOx thin films were deposited by RF magnetron sputtering with TiOx (x<2) target at varied substrate temperatures. The composition and microstructure of the films was characterized by grazing incidence X-ray diffraction, scanning electron microscopy and Raman spectroscopy, which revealed that the films deposited at low temperatures were amorphous, and as the temperature increased up to 600 °C, the prepared films became crystalline and a TiO2 anatase phase was identified. Also the electrical resistivity of the as-prepared TiOx films was investigated as a function of the deposition temperature. The result indicates that with the raise of substrate temperature, the electrical resistivity of the deposited films decreased sharply.

Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications

2018 ◽  
Vol 10 (3) ◽  
pp. 03005-1-03005-6 ◽  
Author(s):  
Rupali Kulkarni ◽  
◽  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhawar ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Single Crystal ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Argon Atmosphere ◽  
Cds Thin Films ◽  
High Band

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

2014 ◽  
Vol 881-883 ◽  
pp. 1117-1121 ◽  
Author(s):  
Xiang Min Zhao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Zno Films ◽  
Si Substrates ◽  
Atomic Force ◽  
Structure Morphology ◽  
Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

Characteristics of Ion Beam Assisted ITO Thin Films Deposited by RF Magnetron Sputtering

2014 ◽  
Vol 601 (1) ◽  
pp. 57-63 ◽  
Author(s):  
Kyong Chan Heo ◽  
Phil Kook Son ◽  
Youngku Sohn ◽  
Jonghoon Yi ◽  
Jin Hyuk Kwon ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Ion Beam ◽  
Rf Magnetron Sputtering ◽  
Ito Thin Films
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