Fabrication of transparent CuCrO2:Mg/ZnO p–n junctions prepared by pulsed laser deposition on glass substrate

Vacuum ◽  
2008 ◽  
Vol 83 (3) ◽  
pp. 614-617 ◽  
Author(s):  
T.-W. Chiu ◽  
K. Tonooka ◽  
N. Kikuchi
Keyword(s):  
Pulsed Laser Deposition ◽  
Glass Substrate ◽  
Pulsed Laser ◽  
Laser Deposition

ANGULAR DISTRIBUTION OF TUNGSTEN MATERIAL AND ION FLUX DURING NANOSECOND PULSED LASER DEPOSITION

2016 ◽  
Vol 23 (03) ◽  
pp. 1650004 ◽  
Author(s):  
M. S. HUSSAIN ◽  
A. H. DOGAR ◽  
A. QAYYUM ◽  
S. A. ABBASI
Keyword(s):  
Pulsed Laser Deposition ◽  
Glass Substrate ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Angle ◽  
Pulsed Laser ◽  
Target Surface ◽  
Laser Deposition ◽  
Ion Energy ◽  
Surface Normal ◽  
Tungsten Material

Tungsten thin films were prepared by pulsed laser deposition (PLD) technique on glass substrates placed at the angles of 0[Formula: see text] to 70[Formula: see text] with respect to the target surface normal. Rutherford backscattering Spectrometry (RBS) analysis of the films indicated that about 90% of tungsten material flux is distributed in a cone of 40[Formula: see text] solid angle while about 54% of it lies even in a narrower cone of 10[Formula: see text] solid angle. Significant diffusion of tungsten in glass substrate has been observed in the films deposited at smaller angles with respect to target surface normal. Time-of-flight (TOF) measurements performed using Langmuir probe indicated that the most probable ion energy decreases from about 600 to 91[Formula: see text]eV for variation of [Formula: see text] from 0[Formula: see text] to 70[Formula: see text]. In general ion energy spread is quite large at all angles investigated here. The enhanced tungsten diffusion in glass substrate observed at smaller angles is most probably due to the higher ion energy and ion assisted recoil implantation of already deposited tungsten.

scholarly journals Pulsed Laser Deposition of In0.1Ga0.9N Nanoshapes by Nd:YAG Technique

Coatings ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 465
Author(s):  
Sara Gad ◽  
Marwa Fathy ◽  
Yehia Badr ◽  
Abd El-Hady B. Kashyout
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Glass Substrate ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Bandgap Energy ◽  
Dense Layer ◽  
X Ray Diffraction ◽  
Phonon Modes ◽  
Resonance Behavior

In0.1Ga0.9N thin film was grown on a cheap glass substrate by the Nd:YAG pulsed laser deposition technique. The In0.1Ga0.9N thin films show the semi-crystalline structure as observed with X-ray diffraction (XRD). The surface morphology has a non-dense layer with both scattered nanospheres and agglomerated particles. These nanospheres tended to grow randomly on the glass substrate, as observed with field emission scanning electron microscopy (FESEM). The direct bandgap energy for In0.1Ga0.9N thin film was 2.08 eV, which is calculated using photoluminescence (PL) measurements. The Raman measurements illustrated two sets of phonon modes as A1(LO) and E2 high vibrational modes that are observed. The resonance behavior of the A1(LO) mode is experimentally verified and studied under laser light energy of 532 nm.

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