ANGULAR DISTRIBUTION OF TUNGSTEN MATERIAL AND ION FLUX DURING NANOSECOND PULSED LASER DEPOSITION

2016 ◽  
Vol 23 (03) ◽  
pp. 1650004 ◽  
Author(s):  
M. S. HUSSAIN ◽  
A. H. DOGAR ◽  
A. QAYYUM ◽  
S. A. ABBASI
Keyword(s):  
Pulsed Laser Deposition ◽  
Glass Substrate ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Angle ◽  
Pulsed Laser ◽  
Target Surface ◽  
Laser Deposition ◽  
Ion Energy ◽  
Surface Normal ◽  
Tungsten Material

Tungsten thin films were prepared by pulsed laser deposition (PLD) technique on glass substrates placed at the angles of 0[Formula: see text] to 70[Formula: see text] with respect to the target surface normal. Rutherford backscattering Spectrometry (RBS) analysis of the films indicated that about 90% of tungsten material flux is distributed in a cone of 40[Formula: see text] solid angle while about 54% of it lies even in a narrower cone of 10[Formula: see text] solid angle. Significant diffusion of tungsten in glass substrate has been observed in the films deposited at smaller angles with respect to target surface normal. Time-of-flight (TOF) measurements performed using Langmuir probe indicated that the most probable ion energy decreases from about 600 to 91[Formula: see text]eV for variation of [Formula: see text] from 0[Formula: see text] to 70[Formula: see text]. In general ion energy spread is quite large at all angles investigated here. The enhanced tungsten diffusion in glass substrate observed at smaller angles is most probably due to the higher ion energy and ion assisted recoil implantation of already deposited tungsten.

Fabrication of Ni–Al thin films by the pulsed laser deposition technique

1992 ◽  
Vol 7 (10) ◽  
pp. 2639-2642 ◽  
Author(s):  
R.K. Singh ◽  
Deepika Bhattacharya ◽  
S. Sharan ◽  
P. Tiwari ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
Nanosecond Laser ◽  
X Ray ◽  
Target Composition

We have fabricated Ni3Al and NiAl thin films on different substrates by the pulsed laser deposition (PLD) technique. A high energy nanosecond laser beam was directed onto Ni–Al (NiAl, Ni3Al) targets, and the evaporated material was deposited onto substrates placed parallel to the target. The substrate temperature was varied between 300 and 400 °C, and the substrate-target distance was maintained at approximately 5 cm. The films were analyzed using scanning electron microscopy, transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry. At energy densities slightly above the evaporation threshold, a slight enrichment of Al was observed, while at higher energy densities the film stoichiometry was close (<5%) to the target composition. Barring a few particles, the surface of the films exhibited a smooth morphology. X-ray and TEM results corroborated the formation of Ni3Al and NiAl films from similar target compositions. These films were characterized by small randomly oriented grains with grain size varying between 200 and 400 Å.

Pulsed Laser Deposition of Epitaxial LiNbO3 Films on Sapphire Substrates Using a Single Crystal Targets

1994 ◽  
Vol 361 ◽  
Author(s):  
See-Hyung Lee ◽  
Tae W. Noh ◽  
Jai-Hyung Lee ◽  
Young-Gi Kim
Keyword(s):  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pole Figure ◽  
Oxygen Pressure ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Sapphire Substrates ◽  
Crystallographic Orientations

ABSTRACTPulsed laser deposition was used to grow epitaxial LiNbO3 films on sapphire(0001) substrates with a single crystal LiNbO3 target. Using deposition temperatures below 450 °C, LiNbO3 films with correct stoichiometry could be grown without using Li-rich targets. Rutherford backscattering spectrometry measurements showed that the oxygen to niobium ratio is 3.00 ± 0.15 to 1.00. It was also found that the crystallographic orientations of the LiNbO3 films could be controlled by adjusting the oxygen pressure during deposition. An x-ray pole figure shows that epitaxial LiNbO3 films were grown on sapphire(0001), but with twin boundaries.

scholarly journals Pulsed Laser Deposition of Bismuth Vanadate Thin Films—The Effect of Oxygen Pressure on the Morphology, Composition, and Photoelectrochemical Performance

Materials ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1360
Author(s):  
Konrad Trzciński ◽  
Mariusz Szkoda ◽  
Maria Gazda ◽  
Jakub Karczewski ◽  
Adam Cenian ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Bulk Heterojunction ◽  
Pulsed Laser ◽  
Target Surface ◽  
Thin Layers ◽  
Bismuth Vanadate ◽  
Laser Deposition ◽  
Photoelectrochemical Performance ◽  
Breakdown Spectroscopy

Thin layers of bismuth vanadate were deposited using the pulsed laser deposition technique on commercially available FTO (fluorine-doped tin oxide) substrates. Films were sputtered from a sintered, monoclinic BiVO4 pellet, acting as the target, under various oxygen pressures (from 0.1 to 2 mbar), while the laser beam was perpendicular to the target surface and parallel to the FTO substrate. The oxygen pressure strongly affects the morphology and the composition of films observed as a Bi:V ratio gradient along the layer deposited on the substrate. Despite BiVO4, two other phases were detected using XRD (X-ray diffraction) and Raman spectroscopy—V2O5 and Bi4V2O11. The V-rich region of the samples deposited under low and intermediate oxygen pressures was covered by V2O5 longitudinal structures protruding from BiVO4 film. Higher oxygen pressure leads to the formation of Bi4V2O11@BiVO4 bulk heterojunction. The presented results suggest that the ablation of the target leads to the plasma formation, where Bi and V containing ions can be spatially separated due to the interactions with oxygen molecules. In order to study the phenomenon more thoroughly, laser-induced breakdown spectroscopy measurements were performed. Then, obtained electrodes were used as photoanodes for photoelectrochemical water splitting. The highest photocurrent was achieved for films deposited under 1 mbar O2 pressure and reached 1 mA cm−2 at about 0.8 V vs Ag/AgCl (3 M KCl). It was shown that V2O5 on the top of BiVO4 decreases its photoactivity, while the presence of a bulk Bi4V2O11@BiVO4 heterojunction is beneficial in water photooxidation.

Influence of the Growth Atmosphere on the Properties of AIN Grown by Plasma - Assisted Pulsed Laser Deposition

1996 ◽  
Vol 423 ◽  
Author(s):  
T. Ogawa ◽  
M. Okamoto ◽  
Y. Mori ◽  
T. Sasaki
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Pulsed Laser Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Nitrogen Plasma ◽  
Laser Deposition ◽  
Nitrogen Gas ◽  
Growth Atmosphere ◽  
Cathodoluminescence Study

AbstractWe have grown highly oriented aluminum nitride (AIN) thin films on Si (100) substrates by using pulsed laser deposition from sintering AIN targets. Three different growth environments, vacuum, nitrogen gas, and nitrogen plasma, have been used in order to investigate the effect of the ambient on the film quality. Rutherford backscattering spectrometry suggests that the N/Al ratio increases when the AIN film is grown in a nitrogen-contained ambient. Cathodoluminescence study implies the decrease of oxygen content in the film grown in a nitrogen plasma ambient.

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