Investigation of the initial growth of cubic-GaN using an AlGaAs buffer layer grown on GaAs (100) by molecular beam epitaxy

2001 ◽  
Vol 227-228 ◽  
pp. 395-398 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Initial Growth ◽  
Cubic Gan

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

High-purity cubic GaN grown on a AlGaAs buffer layer by molecular beam epitaxy

2000 ◽  
Vol 209 (2-3) ◽  
pp. 382-386 ◽  
Author(s):  
Ryuhei Kimura ◽  
Yutaka Gotoh ◽  
Takeo Matsuzawa ◽  
Kiyoshi Takahashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
High Purity ◽  
Molecular Beam ◽  
Cubic Gan

scholarly journals Исследование встроенных электрических полей на интерфейсе GaSe/GaAs методом спектроскопии фотоотражения

2020 ◽  
Vol 54 (10) ◽  
pp. 1011
Author(s):  
О.С. Комков ◽  
С.А. Хахулин ◽  
Д.Д. Фирсов ◽  
П.С. Авдиенко ◽  
И.В. Седова ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Electric Fields ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Growth Stages ◽  
Initial Growth ◽  
Lower Efficiency ◽  
Gaas Buffer Layer

The built-in electric fields are generated at the GaSe/GaAs heterointerface when GaSe layers are grown by molecular beam epitaxy on GaAs(001) substrates. The existence of these fields is indicated by the clearly observed Franz–Keldysh oscillations in the photoreflectance spectra. The different values of the intensities of these fields (within the 9.8−17.6 kV/cm range) can be associated both with the diffusion of Se atoms into the GaAs substrate (or into the GaAs buffer layer) and the formation of transition sub-monolayers at initial growth stages. No built-in fields were observed at the GaSe/GaAs heterointerface in case of GaSe layers grown on GaAs(111)B and GaAs(112) substrates, which can be explained by the lower efficiency of Se penetration into these substrates in contrast to GaAs(001).

scholarly journals Investigation of GaAs surface treatments for ZnSe growth by molecular beam epitaxy without a buffer layer

2021 ◽  
Vol 549 ◽  
pp. 149245
Author(s):  
Chaomin Zhang ◽  
Kirstin Alberi ◽  
Christiana Honsberg ◽  
Kwangwook Park
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Surface Treatments ◽  
Gaas Surface

Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Good Crystallinity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pre Treatment

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.

Effect of As4overpressure on initial growth of gallium arsenide on silicon by molecular beam epitaxy

1989 ◽  
Vol 55 (10) ◽  
pp. 990-992 ◽  
Author(s):  
J. E. Palmer ◽  
G. Burns ◽  
C. G. Fonstad ◽  
C. V. Thompson
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Initial Growth

Thermal stability of cubic GaN film grown by molecular-beam epitaxy on GaAs(001)

2002 ◽  
Vol 299 (1) ◽  
pp. 79-84 ◽  
Author(s):  
M Xu ◽  
C.X Liu ◽  
H.F Liu ◽  
G.M Luo ◽  
X.M Chen ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cubic Gan ◽  
Gan Film ◽  
Thermal Stability Of

Molecular beam epitaxy based growth of cubic GaN quantum dots

2011 ◽  
Vol 8 (5) ◽  
pp. 1495-1498 ◽  
Author(s):  
T. Schupp ◽  
T. Meisch ◽  
B. Neuschl ◽  
M. Feneberg ◽  
K. Thonke ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cubic Gan
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