scholarly journals Исследование встроенных электрических полей на интерфейсе GaSe/GaAs методом спектроскопии фотоотражения

2020 ◽  
Vol 54 (10) ◽  
pp. 1011
Author(s):  
О.С. Комков ◽  
С.А. Хахулин ◽  
Д.Д. Фирсов ◽  
П.С. Авдиенко ◽  
И.В. Седова ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Electric Fields ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Growth Stages ◽  
Initial Growth ◽  
Lower Efficiency ◽  
Gaas Buffer Layer

The built-in electric fields are generated at the GaSe/GaAs heterointerface when GaSe layers are grown by molecular beam epitaxy on GaAs(001) substrates. The existence of these fields is indicated by the clearly observed Franz–Keldysh oscillations in the photoreflectance spectra. The different values of the intensities of these fields (within the 9.8−17.6 kV/cm range) can be associated both with the diffusion of Se atoms into the GaAs substrate (or into the GaAs buffer layer) and the formation of transition sub-monolayers at initial growth stages. No built-in fields were observed at the GaSe/GaAs heterointerface in case of GaSe layers grown on GaAs(111)B and GaAs(112) substrates, which can be explained by the lower efficiency of Se penetration into these substrates in contrast to GaAs(001).

Initial growth stages of Si–Ge–Sn ternary alloys grown on Si (100) by low-temperature molecular-beam epitaxy

2015 ◽  
Vol 49 (12) ◽  
pp. 1582-1586 ◽  
Author(s):  
A. R. Tuktamyshev ◽  
V. I. Mashanov ◽  
V. A. Timofeev ◽  
A. I. Nikiforov ◽  
S. A. Teys
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Ternary Alloys ◽  
Growth Stages ◽  
Initial Growth

Raman study of defects in a GaAs buffer layer grown by low-temperature molecular beam epitaxy

1990 ◽  
Vol 19 (11) ◽  
pp. 1323-1330 ◽  
Author(s):  
R. S. Berg ◽  
Nergis Mavalvala ◽  
Tracie Steinberg ◽  
F. W. Smith
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Gaas Buffer Layer ◽  
Raman Study

Achieving high-quality In0.3Ga0.7As films on GaAs substrates by low-temperature molecular beam epitaxy

CrystEngComm ◽  
2014 ◽  
Vol 16 (47) ◽  
pp. 10774-10779 ◽  
Author(s):  
Fangliang Gao ◽  
Lei Wen ◽  
Jingling Li ◽  
Yunfang Guan ◽  
Shuguang Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
High Quality ◽  
Gaas Substrates

The effects of the thickness of the large-mismatched amorphous In0.6Ga0.4As buffer layer on the In0.3Ga0.7As epi-films grown on the GaAs substrate have been systematically investigated.

Growth and Stability of Strained-Layer Multiple Quantum Wells

1991 ◽  
Vol 240 ◽  
Author(s):  
Shigeru Niki ◽  
Yunosuke Maktta ◽  
Akimasa Yamada ◽  
Junichi Shimada
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Buffer Layer ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Structural Disorder ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Spectra ◽  
Good Crystalline Quality

ABSTRACTThirty-period In0.28Ga0.72As(100Å)/GaAs (100Å) multiple quantum wells (MQWs) have been grown by molecular beam epitaxy on (lOO)-oriented GaAs substrate with a 0.5μm-thick InyGa1-yAs (0≤y≤0.28) buffer layer interposed between the QW layer and the GaAs substrate. The MQWs with y close to the average InAs mole fraction of the QW layer exhibited good crystalline quality. It indicates that the strain is well-balanced between the GaAs and In0.28Ga0.72As layer. A significant change in their photoluminescence spectra has been observed when annealed above 750δC by means of rapid thermal annealing, implying a structural disorder in the QW“region.

Formation of self-assembled ZnTe quantum dots on ZnSe buffer layer grown on GaAs substrate by molecular beam epitaxy

2002 ◽  
Vol 242 (3-4) ◽  
pp. 533-537 ◽  
Author(s):  
M.C Kuo ◽  
C.S Yang ◽  
P.Y Tseng ◽  
J Lee ◽  
J.L Shen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Self Assembled

scholarly journals Investigation of GaAs surface treatments for ZnSe growth by molecular beam epitaxy without a buffer layer

2021 ◽  
Vol 549 ◽  
pp. 149245
Author(s):  
Chaomin Zhang ◽  
Kirstin Alberi ◽  
Christiana Honsberg ◽  
Kwangwook Park
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Surface Treatments ◽  
Gaas Surface

Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Good Crystallinity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pre Treatment

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.

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