Infrared spectroscopic ellipsometry for nondestructive characterization of free-carrier and crystal-structure properties of group-III-nitride semiconductor device heterostructures

2001 ◽  
Author(s):  
Mathias Schubert ◽  
Alexander Kasic ◽  
Stephan Figge ◽  
Marc Diesselberg ◽  
Sven Einfeldt ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Spectroscopic Ellipsometry ◽  
Semiconductor Device ◽  
Free Carrier ◽  
Group Iii ◽  
Nitride Semiconductor ◽  
Group Iii Nitride ◽  
Nondestructive Characterization ◽  
Structure Properties

NbN Capping Layer for Enhanced Thermal Processing of Group III-Nitride Semiconductor Devices

2016 ◽  
Vol 6 (2) ◽  
pp. Q3067-Q3070 ◽  
Author(s):  
J. D. Greenlee ◽  
A. Nath ◽  
T. J. Anderson ◽  
B. N. Feigelson ◽  
A. D. Koehler ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Semiconductor Devices ◽  
Capping Layer ◽  
Group Iii ◽  
Nitride Semiconductor ◽  
Group Iii Nitride

Raman scattering characterization of group III-nitride epitaxial layers including cubic phase

1998 ◽  
Vol 189-190 ◽  
pp. 435-438 ◽  
Author(s):  
Hiroshi Harima ◽  
Toshiaki Inoue ◽  
Shin-ichi Nakashima ◽  
Hajime Okumura ◽  
Yuuki Ishida ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Cubic Phase ◽  
Epitaxial Layers ◽  
Group Iii ◽  
Group Iii Nitride

scholarly journals Optical phonons and free-carrier effects in MOVPE grown AlxGa1−xN measured by Infrared Ellipsometry

1999 ◽  
Vol 4 (1) ◽  
Author(s):  
M. Schubert ◽  
A. Kasic ◽  
T.E. Tiwald ◽  
J. Off ◽  
B. Kuhn ◽  
...  
Keyword(s):  
Dispersion Model ◽  
Free Carrier ◽  
Model Parameters ◽  
Model Calculations ◽  
Group Iii ◽  
Infrared Ellipsometry ◽  
Mode Behavior ◽  
Novel Approach ◽  
Back Ground ◽  
Group Iii Nitride

We report on the application of infrared spectroscopic ellipsometry (IR-SE) for wavenumbers from 333cm−1 to 1200cm−1 as a novel approach to non-destructive optical characterization of free-carrier and optical phonon properties of group III-nitride heterostructures. Undoped α-GaN, α-AlN, α-AlxGa1−xN (x = 0.17, 0.28, 0.5), and n-type silicon (Si) doped α-GaN layers were grown by metal-organic vapor phase epitaxy (MOVPE) on c-plane sapphire (α-Al2O3). The four-parameter semi-quantum (FPSQ) dielectric lattice-dispersion model and the Drude model for free-carrier response are employed for analysis of the IR-SE data. Model calculations for the ordinary (∈⊥) and extraordinary (∈||) dielectric functions of the heterostructure components provide sensitivity to IR-active phonon frequencies and free-carrier parameters. We observe that the α-AlxGa1−xN layers are unintentionally doped with a back ground free-carrier concentration of 1–4 1018cm−3. The ternary compounds reveal a two-mode behavior in ∈⊥, whereas a one-mode behavior is sufficient to explain the optical response for ∈||. We further provide a precise set of model parameters for calculation of the sapphire infrared dielectric functions which are prerequisites for analysis of infrared spectra of III-nitride heterostructures grown on α-Al2O3.

Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds

2001 ◽  
Vol 63 (16) ◽  
Author(s):  
L. E. Ramos ◽  
L. K. Teles ◽  
L. M. R. Scolfaro ◽  
J. L. P. Castineira ◽  
A. L. Rosa ◽  
...  
Keyword(s):  
Effective Mass ◽  
Group Iii ◽  
Zinc Blende ◽  
Mass Properties ◽  
Nitride Semiconductor ◽  
Semiconductor Compounds ◽  
Group Iii Nitride
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