Synthesis of the novel anions [Re3H3(μ3-OR)(CO)9]− (R = Et, i-Pr, t-Bu) and x-ray characterization of [Re3H3(μ3-OEt)(CO)9](NEt4

1981 ◽  
Vol 219 (2) ◽  
pp. C23-C25 ◽  
Author(s):  
Gianfranco Ciani ◽  
Giuseppe D'Alfonso ◽  
Maria Freni ◽  
Pierfrancesco Romiti ◽  
Angelo Sironi
Keyword(s):  
The Novel ◽  
X Ray

Synthesis and Characterization of Y2O3 Nanoflowers

2012 ◽  
Vol 465 ◽  
pp. 76-79 ◽  
Author(s):  
Shuang Zhan ◽  
Xia Li
Keyword(s):  
Fourier Transform ◽  
Phase Composition ◽  
Electron Microscope ◽  
Synthesis And Characterization ◽  
The Novel ◽  
X Ray Diffraction ◽  
Facile Hydrothermal Method ◽  
X Ray ◽  
Scanning Electron

The novel Y2O3 nanoflowers were synthesized through a facile hydrothermal method without using any catalyst or template. The phase composition and the microstructure of as-prepared products were characterized by field emission scanning electron microscope (FE-SEM), X-ray diffraction (XRD) as well as Fourier transform infrared spectrum. The formation mechanism for the Y2O3 flowers has been proposed.

Selenium coronands. A novel conformational pair

1988 ◽  
Vol 66 (11) ◽  
pp. 2956-2958 ◽  
Author(s):  
B. Mario Pinto ◽  
Blair D. Johnston ◽  
Raymond J. Batchelor ◽  
Frederick W. B. Einstein ◽  
Ian D. Gay
Keyword(s):  
Nmr Spectra ◽  
Crystallographic Analysis ◽  
The Novel ◽  
Torsion Angles ◽  
X Ray ◽  
Structure Formula ◽  
Independent Molecules ◽  
Similar Conformation ◽  
C Nmr

The synthesis and characterization of the novel selenium coronands, 1,3,7,9-tetraselenacyclododecane 1a, 1,3,7,9,13,15-hexaselenacyclooctadecane 2a, the corresponding β-gem-dimethyl derivatives 1b, 2b, and 1,5,9,13-tetraselenacyclohexadecane 3, and 1,5,9,13,17,21-hexaselenacyclotetracosane 4 are described. X-ray crystallographic analysis of 1a reveals three independent molecules that exist in two distinct conformations, one molecule having approximate two-fold symmetry together with two molecules (of similar conformation) each having crystallographic [Formula: see text] symmetry. The conformations are denoted as [3333] or [66]. Whereas one resembles that of cyclododecane and tetrathia-12-crown-4 with respect to torsion angles, the other resembles that of tetraoxa-12-crown-4. The solid state CP-MAS 77Se and 13C nmr spectra are interpreted in light of the crystallographic information. Crystal structure: formula Se4C8H16; fw = 428.05; monoclinic, P21/c; Z = 8; a = 15.823(2) Å, b = 5.534(1) Å, c = 27.962(5) Å, β = 92.26(1)°; V = 2446.6 Å3; T = 200 K; R = 0.027 for 2162 observed data (I ≥ 2.5σ(I)).

Isolation and X-ray characterization of a new crystal modification of Pd6(μ2-CO)6(μ-dppm)3 during the synthesis of the novel fluxional triangulo Pd(0) complex [Pd3(μ2-CO)3(dppm)2]n (n = 1 or 2)

Polyhedron ◽  
1997 ◽  
Vol 16 (16) ◽  
pp. 2789-2796 ◽  
Author(s):  
David G. Holah ◽  
Alan N. Hughes ◽  
Elizabeth Krysa ◽  
Robert T. Markewich ◽  
Matthew D. Havighurst ◽  
...  
Keyword(s):  
Crystal Modification ◽  
The Novel ◽  
X Ray

Synthesis and Characterization of Ammonium Decavanadate (V)

2005 ◽  
Vol 494 ◽  
pp. 351-356 ◽  
Author(s):  
M.R. Todorović ◽  
U.B. Mioč ◽  
I. Holclajtner-Antunović ◽  
D. Šegan
Keyword(s):  
Hydrogen Bonds ◽  
Spectroscopic Analysis ◽  
Synthesis And Characterization ◽  
The Novel ◽  
Biochemical Activity ◽  
Single Crystal Diffraction ◽  
X Ray ◽  
Conductive Properties ◽  
Ir And Raman

It is known that various polyoxovanadates interact specifically with enzymes, which is the main way of their biochemical activity. Therefore we have synthesized ammonium decavanadate, (NH4)6V10O28·6H2O. The novel compound was characterized by elemental and thermal analysis, X-ray powder and single crystal diffraction and IR and Raman spectroscopy. Its conductive properties have been studied, too. The spectroscopic analysis has shown the presence of hydrogen bonds of different strengths. In order to improve the biochemical activity of this compound and having in mind the presence of strong hydrogen bonds, we essayed the synthesis of complex of polyoxovanadate with alanine. The obtained product was characterized by the mentioned methods.

scholarly journals SYNTHESIS, CRYSTAL STRUCTURE, HIRSHFELD SURFACE ANALYSIS AND QUANTUM CHEMICAL CALCULATIONS OF [Cu2(C6H9N3S)2(ClO4)2] π-COMPLEX WITH 2-ALLYLAMINO-5-METHYL-1,3,4-THIADIAZOLE

2021 ◽  
Vol 26 (1(77)) ◽  
pp. 16-25
Author(s):  
Yu. I. Slyvka ◽  
E. A. Goreshnik ◽  
N. T. Pokhodylo ◽  
М. G. Mys’kiv
Keyword(s):  
Crystal Structure ◽  
Computational Analysis ◽  
Structure Characterization ◽  
Electrochemical Technique ◽  
The Novel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Π Complex ◽  
Centrosymmetric Dimers

This work is focused on the synthesis and structure characterization of the novel Cu(I) π-complex [Cu2(Thiaz1)2(ClO4)2] (1) with 2-allylamino-5-methyl-1,3,4-thiadiazole (Thiaz1) ligand. The crystals of the compound were obtained by means of the alternating-current electrochemical technique and studied using single crystal X-ray diffraction. The crystal structure of the complex 1 is constructed from the centrosymmetric dimers, in which two copper(I) ions are coordinated by two Thiaz1 molecules through thiadiazole N atoms and allylic C=C bond. Energy framework computational analysis for structure 1 has been performed.  

The Novel Polishing Characteristics for GaAs Based Diode Lasers Wafer

2013 ◽  
Vol 871 ◽  
pp. 221-225
Author(s):  
Zai Jin Li ◽  
Xiao Gang Zheng ◽  
Te Li ◽  
Yi Qu ◽  
Bao Xue Bo ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Diode Lasers ◽  
Side Surface ◽  
Polished Surface ◽  
The Novel ◽  
Oxide Layers ◽  
X Ray ◽  
Atomic Force ◽  
Wafer Polishing

A novel polishing technology for the GaAs based diode lasers wafer is presented. Designed for technological simplicity and minimum damage generated within the GaAs based diode lasers wafer. It combines GaAs based diode lasers wafer polishing with three conditions consisting of (1) removal of thermodynamically unstable species and (2) surface oxide layers must be completely removed after thermal cleaning, and (3) a smooth surface must be provide. Revolving ultrasonic atomization technology is adopted in the polishing process. At first impurity removal is achieved by organic solvents, second NH4OH:H2O2:H2O=1:1:10 solution and HCl:H2O2:H2O=1:1:20 solution in succession to etch a very thin layer, the goal of the step is removing contaminants and forming a very thin oxidation layer on the GaAs based diode lasers wafer, NH4OH:H2O=1:5 solution is used as the removed oxide layers in the end. The effectiveness of the process is demonstrated by operation of GaAs based diode lasers wafer, characterization of the oxide composition was carried out by X-ray photoelectron spectroscopy,and surface morphology was observed by total reflection X-ray fluorescence spectroscopy and atomic force microscope. The research results show that the polished surface without contamination, and the n-side surface are very smooth.

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